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PMIC - Controladores de Puerta

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
TC429EOA IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology	3,314	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Single	1	N-Channel, P-Channel MOSFET	7V ~ 18V	0.8V, 2.4V	6A, 6A	Inverting	-	23ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX17602AUA+ IC GATE DRVR LOW-SIDE 8UMAX Analog Devices Inc./Maxim Integrated	397	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel MOSFET	4V ~ 14V	0.8V, 2.1V	4A, 4A	Inverting, Non-Inverting	-	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX17605AUA+ IC GATE DRVR LOW-SIDE 8UMAX Analog Devices Inc./Maxim Integrated	2,078	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, SiC MOSFET	4V ~ 14V	2V, 4.25V	4A, 4A	Inverting, Non-Inverting	-	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX17603AUA+ IC GATE DRVR LOW-SIDE 8UMAX Analog Devices Inc./Maxim Integrated	215	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel MOSFET	4V ~ 14V	2V, 4.25V	4A, 4A	Inverting	-	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX17605ASA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	2,027	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, SiC MOSFET	4V ~ 14V	2V, 4.25V	4A, 4A	Inverting, Non-Inverting	-	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MCP14E11-E/SN IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology	250	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	3A, 3A	Inverting, Non-Inverting	-	25ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount
MCP14E8-E/SN IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology	127	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	2A, 2A	Inverting, Non-Inverting	-	12ns, 15ns	-40°C ~ 150°C (TJ)	Surface Mount
UCC37325DGN IC GATE DRVR LOW-SIDE 8MSOP Texas Instruments	263	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 15V	1V, 2V	4A, 4A	Inverting, Non-Inverting	-	20ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount
MCP14E11-E/P IC GATE DRVR LOW-SIDE 8DIP Microchip Technology	2,845	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	3A, 3A	Inverting, Non-Inverting	-	25ns, 25ns	-40°C ~ 150°C (TJ)	Through Hole
MCP14E8-E/P IC GATE DRVR LOW-SIDE 8DIP Microchip Technology	270	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	2A, 2A	Inverting, Non-Inverting	-	12ns, 15ns	-40°C ~ 150°C (TJ)	Through Hole
TC4421AVMF IC GATE DRVR LOW-SIDE 8DFN Microchip Technology	3,354	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	10A, 10A	Inverting	-	38ns, 33ns	-40°C ~ 150°C (TJ)	Surface Mount
TPS2811D IC GATE DRVR LOW-SIDE 8SOIC Texas Instruments	200	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Synchronous	2	N-Channel, P-Channel MOSFET	4V ~ 14V	1V, 4V	2A, 2A	Inverting	-	14ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount
MAX15012AASA+ IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated	3,974	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	-	2A, 2A	Non-Inverting	175 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount
MAX5056AASA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	2,021	-	RFQ	Ficha técnica	Tube	-	Not For New Designs	Low-Side	Independent	2	N-Channel MOSFET	4V ~ 15V	0.8V, 2.1V	4A, 4A	Non-Inverting	-	32ns, 26ns	-40°C ~ 150°C (TJ)	Surface Mount
TSC427CPA+ IC GATE DRVR LOW-SIDE 8DIP Analog Devices Inc./Maxim Integrated	2,916	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	25ns, 25ns	0°C ~ 70°C (TA)	Through Hole
MAX5063DASA+ IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated	3,092	-	RFQ	Ficha técnica	Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	0.8V, 2V	2A, 2A	Inverting, Non-Inverting	125 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount
TC4426MJA IC GATE DRVR LOW-SIDE 8CERDIP Microchip Technology	3,671	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	19ns, 19ns	-55°C ~ 125°C (TA)	Through Hole
TC4423MJA IC GATE DRVR LOW-SIDE 8CERDIP Microchip Technology	3,833	-	RFQ	Ficha técnica	Tube	-	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	3A, 3A	Inverting	-	23ns, 25ns	-55°C ~ 150°C (TJ)	Through Hole
2DU180206MR02 (ROHM: BSM300D12P3E005/BSM400D12 Tamura	3,033	-	RFQ		Bulk	-	Active	Half-Bridge	Independent	2	IGBT, SiC MOSFET	5V	-	-	-	-	500ns, 500ns	-40°C ~ 85°C (TA)	Chassis Mount
2DU180506MR02 (ROHM: BSM300D12P2E001/BSM400D12 Tamura	2,866	-	RFQ	Ficha técnica	Bulk	-	Active	Half-Bridge	Independent	2	SiC MOSFET	5V	0.8V, 2V	20mA, -	-	-	500ns, 500ns	-40°C ~ 85°C	Chassis Mount