PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR25603PBF

IR25603PBF

IR25603 - GATE DRIVER

International Rectifier
2,138 -

RFQ

IR25603PBF

Ficha técnica

Bulk - Active Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - 180mA, 260mA RC Input Circuit 600 V 80ns, 45ns -40°C ~ 150°C (TJ) Through Hole
FAN3213TMX-F085

FAN3213TMX-F085

HALF BRIDGE BASED MOSFET DRIVER

Fairchild Semiconductor
2,203 -

RFQ

FAN3213TMX-F085

Ficha técnica

Bulk Automotive, AEC-Q100 Active Low-Side Synchronous 2 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 5A, 5A Inverting - 12ns, 9ns -55°C ~ 150°C (TJ) Surface Mount
FAN3225CMX-F085

FAN3225CMX-F085

FULL BRIDGE BASED PERIPHERAL DRI

Fairchild Semiconductor
3,334 -

RFQ

FAN3225CMX-F085

Ficha técnica

Bulk Automotive, AEC-Q100 Active Low-Side Independent 2 N-Channel MOSFET 4.5V ~ 18V - 5A, 5A Inverting, Non-Inverting - 12ns, 9ns -40°C ~ 125°C (TA) Surface Mount
FAN7083MX-GF085

FAN7083MX-GF085

HALF BRIDGE BASED MOSFET DRIVER

Fairchild Semiconductor
2,945 -

RFQ

FAN7083MX-GF085

Ficha técnica

Bulk Automotive, AEC-Q100 Active High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V - 200mA, 400mA Non-Inverting 600 V 200ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
2EDN8523FXTMA1

2EDN8523FXTMA1

IC GATE DRVR LOW-SIDE DSO8

Infineon Technologies
2,254 -

RFQ

2EDN8523FXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EiceDriver™ Active Low-Side Independent 2 N-Channel MOSFET 4.5V ~ 20V 1.2V, 1.9V 5A, 5A Inverting - 5.3ns, 4.5ns -40°C ~ 150°C (TJ) Surface Mount
1ED44175N01BXTSA1

1ED44175N01BXTSA1

IC GATE DRVR LOW-SIDE SOT23-6

Infineon Technologies
3,270 -

RFQ

1ED44175N01BXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Single 1 IGBT, N-Channel MOSFET 12.7V ~ 20V 1.2V, 1.9V 2.6A, 2.6A Non-Inverting - 5ns, 5ns -40°C ~ 125°C (TA) Surface Mount
IR4426PBF

IR4426PBF

IR4426 - GATE DRIVER

International Rectifier
3,589 -

RFQ

IR4426PBF

Ficha técnica

Bulk - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Through Hole
FAN73892MX

FAN73892MX

HALF BRIDGE BASED PERIPHERAL DRI

Fairchild Semiconductor
2,135 -

RFQ

FAN73892MX

Ficha técnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 350mA, 650mA Inverting 600 V 50ns, 30ns -40°C ~ 150°C (TJ) Surface Mount
IVCR2401DPR

IVCR2401DPR

GENERAL PURPOSE DRIVER, 25V 4A S

Inventchip
3,908 -

RFQ

IVCR2401DPR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 8V ~ 20V 1.7V, 1.6V 4A, 4A Non-Inverting - 13ns, 13ns -40°C ~ 125°C (TA) Surface Mount
6ED003L06FXUMA1

6ED003L06FXUMA1

6ED003L06 - HALF-BRIDGE BASED MO

Infineon Technologies
3,137 -

RFQ

6ED003L06FXUMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - -
IRS2117PBF

IRS2117PBF

IRS2117 - GATE DRIVER

International Rectifier
3,957 -

RFQ

IRS2117PBF

Ficha técnica

Bulk - Active High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 290mA, 600mA Non-Inverting 600 V 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IVCR2405DR

IVCR2405DR

GENERAL PURPOSE DRIVER, 24V, 4A

Inventchip
2,377 -

RFQ

IVCR2405DR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 4.5V ~ 20V - 4A, 4A Inverting, Non-Inverting - 6ns, 6ns -40°C ~ 125°C (TA) Surface Mount
UC2714DTR

UC2714DTR

UC2714 COMPLEMENTARY SWITCH FET

Texas Instruments
2,014 -

RFQ

UC2714DTR

Ficha técnica

Bulk * Active - - - - - - - - - - - -
LM9061QDRQ1

LM9061QDRQ1

LM9061-Q1 - HIGH-SIDE PROTECTION

Texas Instruments
421 -

RFQ

LM9061QDRQ1

Ficha técnica

Bulk * Active - - - - - - - - - - - -
LM5100AMRX/NOPB

LM5100AMRX/NOPB

LM5100A 3A HIGH VOLTAGE HIGH-SID

National Semiconductor
2,939 -

RFQ

LM5100AMRX/NOPB

Ficha técnica

Bulk - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 2.3V, - 3A, 3A Non-Inverting 118 V 430ns, 260ns -40°C ~ 125°C (TJ) Surface Mount
IR2102STRPBF

IR2102STRPBF

IR2102S - GATE DRIVER

International Rectifier
2,653 -

RFQ

IR2102STRPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - -
LTC1982ES6#TRM

LTC1982ES6#TRM

LTC1982 - DUAL MICROPOWER HIGH S

Linear Technology
843 -

RFQ

LTC1982ES6#TRM

Ficha técnica

Bulk * Active - - - - - - - - - - - -
IR21271PBF

IR21271PBF

IR21271 - GATE DRIVER

International Rectifier
2,449 -

RFQ

IR21271PBF

Ficha técnica

Bulk - Active High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
TSC426EPA

TSC426EPA

TSC426 - BUFFER/INVERTER BASED M

Analog Devices Inc./Maxim Integrated
2,283 -

RFQ

TSC426EPA

Ficha técnica

Bulk * Active - - - - - - - - - - - -
FAN7081MX-SN00035

FAN7081MX-SN00035

BUFFER/INVERTER BASED MOSFET DRI

onsemi
2,071 -

RFQ

FAN7081MX-SN00035

Ficha técnica

Bulk * Active - - - - - - - - - - - -
Total 6917 Record«Prev1... 4243444546474849...346Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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