PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IRS2336JTRPBF

IRS2336JTRPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,379 -

RFQ

IRS2336JTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS2608DSTRPBF

IRS2608DSTRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,736 -

RFQ

IRS2608DSTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 200mA, 350mA Inverting, Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS26310DJTRPBF

IRS26310DJTRPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
3,544 -

RFQ

IRS26310DJTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21364JTRPBF

IR21364JTRPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,511 -

RFQ

IR21364JTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS21281STRPBF

IRS21281STRPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies
3,924 -

RFQ

IRS21281STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete High-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 2.5V 290mA, 600mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IRS2128STRPBF

IRS2128STRPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies
2,088 -

RFQ

IRS2128STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete High-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 290mA, 600mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IRS2336JPBF

IRS2336JPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,669 -

RFQ

IRS2336JPBF

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS2336DJPBF

IRS2336DJPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
3,081 -

RFQ

IRS2336DJPBF

Ficha técnica

Bulk,Tube - Discontinued at Mosen Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2133PBF

IR2133PBF

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
3,397 -

RFQ

IR2133PBF

Ficha técnica

Tube - Discontinued at Mosen Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Through Hole
IR2135PBF

IR2135PBF

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
3,742 -

RFQ

IR2135PBF

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Through Hole
IRS21814PBF

IRS21814PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,519 -

RFQ

IRS21814PBF

Ficha técnica

Bulk,Tube - Discontinued at Mosen Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21366SPBF

IR21366SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
3,368 -

RFQ

IR21366SPBF

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21364SPBF

IR21364SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
3,282 -

RFQ

IR21364SPBF

Ficha técnica

Tube - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21091PBF

IR21091PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,308 -

RFQ

IR21091PBF

Ficha técnica

Tube - Obsolete Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IRS21271PBF

IRS21271PBF

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies
3,691 -

RFQ

IRS21271PBF

Ficha técnica

Tube - Discontinued at Mosen High-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR21362PBF

IR21362PBF

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
3,535 -

RFQ

IR21362PBF

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 0.8V, 3V 200mA, 350mA Inverting, Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IRS21094PBF

IRS21094PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies
2,599 -

RFQ

IRS21094PBF

Ficha técnica

Tube - Discontinued at Mosen Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IRS21091PBF

IRS21091PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,455 -

RFQ

IRS21091PBF

Ficha técnica

Bulk,Tube - Discontinued at Mosen Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IRS26310DJPBF

IRS26310DJPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,392 -

RFQ

IRS26310DJPBF

Ficha técnica

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2131PBF

IR2131PBF

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies
2,161 -

RFQ

IR2131PBF

Ficha técnica

Tube - Active Half-Bridge Independent 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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