PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
6EDL04I06NTXUMA1

6EDL04I06NTXUMA1

IC GATE DRVR HALF-BRIDG DSO28-17

Infineon Technologies
2,377 -

RFQ

6EDL04I06NTXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EiceDriver™ Active Half-Bridge 3-Phase 6 IGBT, N-Channel, P-Channel MOSFET 13V ~ 17.5V 1.1V, 1.7V - Non-Inverting 600 V 60ns, 26ns -40°C ~ 125°C (TJ) Surface Mount
MCP1404-E/SO

MCP1404-E/SO

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology
334 -

RFQ

MCP1404-E/SO

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 4.5A, 4.5A Non-Inverting - 15ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
ISL2100AAR3Z

ISL2100AAR3Z

IC GATE DRVR HALF-BRIDGE 9DFN

Renesas Electronics America Inc
775 -

RFQ

ISL2100AAR3Z

Ficha técnica

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 3.7V, 7.4V 2A, 2A Non-Inverting 114 V 10ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
MAX4429EPA+

MAX4429EPA+

IC GATE DRVR LOW-SIDE 8DIP

Analog Devices Inc./Maxim Integrated
125 -

RFQ

MAX4429EPA+

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 25ns, 25ns -40°C ~ 85°C (TA) Through Hole
MIC4467ZN

MIC4467ZN

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology
208 -

RFQ

MIC4467ZN

Ficha técnica

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 14ns, 13ns 0°C ~ 70°C (TA) Through Hole
MAX5077AUD+

MAX5077AUD+

IC GATE DRVR LOW-SIDE 14TSSOP

Analog Devices Inc./Maxim Integrated
170 -

RFQ

MAX5077AUD+

Ficha técnica

Tube - Not For New Designs Low-Side Synchronous 2 N-Channel MOSFET 4.5V ~ 15V - 3A, 3A RC Input Circuit - 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
IR2183PBF

IR2183PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
3,056 -

RFQ

IR2183PBF

Ficha técnica

Tube - Not For New Designs Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR2133JTRPBF

IR2133JTRPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies
2,151 -

RFQ

IR2133JTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Surface Mount
LTC1155IS8#TRPBF

LTC1155IS8#TRPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Analog Devices Inc.
3,585 -

RFQ

LTC1155IS8#TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active High-Side Independent 2 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2V - Non-Inverting - - -40°C ~ 85°C (TA) Surface Mount
MAX628CPA+

MAX628CPA+

IC GATE DRVR LOW-SIDE 8DIP

Analog Devices Inc./Maxim Integrated
268 -

RFQ

MAX628CPA+

Ficha técnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 2A, 2A Inverting, Non-Inverting - 25ns, 20ns 0°C ~ 70°C (TA) Through Hole
2DUC51008DXE1

2DUC51008DXE1

GATE DRIVER UNIT (WITHOUT GATE R

Tamura
117 -

RFQ

Tray - Active Half-Bridge Synchronous 2 IGBT 13V ~ 28V - - Non-Inverting - - -40°C ~ 85°C (TA) Chassis Mount
2DUC51008CXE1

2DUC51008CXE1

GATE DRIVER UNIT (WITHOUT GATE R

Tamura
113 -

RFQ

Tray - Active Half-Bridge Synchronous 2 IGBT 13V ~ 28V - - Non-Inverting 1200 V - -40°C ~ 85°C (TA) Chassis Mount
2DM180506CM

2DM180506CM

IC GATE DRVR HALF-BRIDGE 0502

Tamura
104 -

RFQ

2DM180506CM

Ficha técnica

Tray - Active Half-Bridge Independent 2 N-Channel MOSFET 15V ~ 24V 0.8V, 2V - - - - -30°C ~ 85°C (TA) Through Hole
2DM150806CM

2DM150806CM

IC GATE DRVR HALF-BRIDGE 0502

Tamura
101 -

RFQ

2DM150806CM

Ficha técnica

Tray - Active Half-Bridge Independent 2 IGBT 15V ~ 24V 0.8V, 2V - - - - -30°C ~ 85°C (TA) Through Hole
2DM180206CM

2DM180206CM

IC GATE DRVR HALF-BRIDGE 0502

Tamura
2,186 -

RFQ

2DM180206CM

Ficha técnica

Tray - Active Half-Bridge Independent 2 N-Channel MOSFET 15V ~ 24V 0.8V, 2V - - - - -30°C ~ 85°C (TA) Through Hole
4DUD51016CFN1

4DUD51016CFN1

GATE DRIVER UNIT FOR FUJI ELECTR

Tamura
3,821 -

RFQ

Tray - Active Half-Bridge Synchronous 4 IGBT 13V ~ 28V - - Non-Inverting 1200 V - -40°C ~ 85°C (TA) Chassis Mount
4DUC51016CFA2

4DUC51016CFA2

GATE DRIVER UNIT FOR FUJI ELECTR

Tamura
2,151 -

RFQ

Tray - Active Half-Bridge Synchronous 4 IGBT 13V ~ 28V - - Non-Inverting 1200 V - -40°C ~ 85°C (TA) Chassis Mount
4DUC51016CFA1

4DUC51016CFA1

GATE DRIVER UNIT FOR FUJI ELECTR

Tamura
3,291 -

RFQ

Tray - Active Half-Bridge Synchronous 4 IGBT 13V ~ 28V - - Non-Inverting 1200 V - -40°C ~ 85°C (TA) Chassis Mount
1SP0635V2M1-12

1SP0635V2M1-12

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
3,024 -

RFQ

1SP0635V2M1-12

Ficha técnica

Bulk SCALE™-2 Active High-Side or Low-Side Single 1 IGBT 14.5V ~ 15.5V - 35A, 35A - 1200 V 9ns, 30ns -40°C ~ 85°C (TA) Surface Mount
M74VHC1GU04DFT2H

M74VHC1GU04DFT2H

LOG CMOS INVERTER GATE

onsemi
3,473 -

RFQ

Bulk * Active - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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