PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
UCC27201DG4

UCC27201DG4

IC DVR HIGH/LOW SIDE 3A 8SOIC

Unitrode
2,371 -

RFQ

UCC27201DG4

Ficha técnica

Bulk - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 17V 0.8V, 2.5V 3A, 3A Non-Inverting 120 V 8ns, 7ns -40°C ~ 140°C (TJ) Surface Mount
FAN7390MX

FAN7390MX

HALF BRIDGE BASED PERIPHERAL DRI

Fairchild Semiconductor
3,378 -

RFQ

FAN7390MX

Ficha técnica

Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 22V 1.2V, 2.5V 4.5A, 4.5A Non-Inverting 600 V 25ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
1EDN8550B

1EDN8550B

1EDN8550 - GATE DRIVER

Infineon Technologies
3,779 -

RFQ

1EDN8550B

Ficha técnica

Bulk * Active - - - - - - - - - - - -
EL7457CSZ-T13

EL7457CSZ-T13

BUFFER/INVERTER BASED MOSFET DRI

Intersil
2,761 -

RFQ

EL7457CSZ-T13

Ficha técnica

Bulk - Active High-Side or Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 2A, 2A Non-Inverting - 13.5ns, 13ns -40°C ~ 85°C (TA) Surface Mount
IR22141SSPBF

IR22141SSPBF

IR22141 - GATE DRIVER

International Rectifier
2,466 -

RFQ

IR22141SSPBF

Ficha técnica

Bulk - Obsolete Half-Bridge Independent 2 IGBT 11.5V ~ 20V 0.8V, 2V 2A, 3A Non-Inverting 1.2 V 24ns, 7ns -40°C ~ 150°C (TJ) Surface Mount
LM5111-1MX/NOPB

LM5111-1MX/NOPB

LM5111 DUAL 5A COMPOUND GATE DRI

Texas Instruments
2,050 -

RFQ

LM5111-1MX/NOPB

Ficha técnica

Bulk - Active Low-Side Independent 2 N-Channel MOSFET 3.5V ~ 14V 0.8V, 2.2V 3A, 5A Non-Inverting - 14ns, 12ns -40°C ~ 125°C (TJ) Surface Mount
UCC37323P

UCC37323P

UCC37323 DUAL 4 A PEAK HIGH SPEE

Texas Instruments
2,849 -

RFQ

UCC37323P

Ficha técnica

Bulk Automotive, AEC-Q100 Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 1V, 2V 4A, 4A Inverting - 20ns, 15ns 0°C ~ 70°C (TJ) Through Hole
IR21091STRPBF

IR21091STRPBF

IR21091S - GATE DRIVER

International Rectifier
2,097 -

RFQ

IR21091STRPBF

Ficha técnica

Bulk - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS21814PBF

IRS21814PBF

IRS21814 - GATE DRIVER

International Rectifier
3,939 -

RFQ

IRS21814PBF

Ficha técnica

Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
ICL7667CBAZA-T

ICL7667CBAZA-T

ICL7667 DUAL POWER MOSFET DRIVER

Intersil
3,405 -

RFQ

ICL7667CBAZA-T

Ficha técnica

Bulk - Active - Independent 2 N-Channel MOSFET 4.5V ~ 15V 0.8V, 2V - Inverting - 20ns, 20ns 0°C ~ 70°C (TA) Surface Mount
HIP4080AIBZ

HIP4080AIBZ

FULL BRIDGE BASED MOSFET DRIVER

Intersil
3,206 -

RFQ

HIP4080AIBZ

Ficha técnica

Bulk - Active Half-Bridge Synchronous 4 N-Channel MOSFET 9.5V ~ 15V 1V, 2.5V 2.6A, 2.4A Non-Inverting 95 V 10ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
IRS44262SPBF

IRS44262SPBF

IRS4426 - GATE DRIVER

International Rectifier
3,817 -

RFQ

IRS44262SPBF

Ficha técnica

Bulk - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 11.2V ~ 20V 0.8V, 2.5V 2.3A, 3.3A Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
IR25600PBF

IR25600PBF

IR25600 - GATE DRIVER

International Rectifier
3,468 -

RFQ

Bulk - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Non-Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Through Hole
IRS2334STRPBF

IRS2334STRPBF

IRS2334 - GATE DRIVER

International Rectifier
3,887 -

RFQ

IRS2334STRPBF

Ficha técnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS2336STRPBF

IRS2336STRPBF

IRS2336 - GATE DRIVER

International Rectifier
3,032 -

RFQ

IRS2336STRPBF

Ficha técnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2127STRPBF

IR2127STRPBF

IR2127S - GATE DRIVER

International Rectifier
3,500 -

RFQ

IR2127STRPBF

Ficha técnica

Bulk - Active High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IR21271SPBF

IR21271SPBF

IR21271S - GATE DRIVER

Infineon Technologies
2,402 -

RFQ

IR21271SPBF

Ficha técnica

Bulk - Active High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
SM72482MAE-4

SM72482MAE-4

BUFFER/INVERTER BASED MOSFET DRI

National Semiconductor
3,513 -

RFQ

SM72482MAE-4

Ficha técnica

Bulk * Active - - - - - - - - - - - -
UCC27423PE4

UCC27423PE4

BUFFER/INVERTER BASED MOSFET DRI

Texas Instruments
2,356 -

RFQ

UCC27423PE4

Ficha técnica

Bulk Automotive, AEC-Q100 Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4V ~ 15V 1V, 2V 4A, 4A Inverting - 20ns, 15ns -40°C ~ 105°C (TJ) Through Hole
IRS2336SPBF

IRS2336SPBF

IRS2336 - GATE DRIVER

International Rectifier
3,243 -

RFQ

IRS2336SPBF

Ficha técnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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