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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NCP5901MNTBGBUFFER/INVERTER BASED MOSFET DRI onsemi |
3,835 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 13.2V | 1V, 2V | - | Non-Inverting | 35 V | 16ns, 11ns | 0°C ~ 150°C (TJ) | Surface Mount |
|
LM5112MYX/NOPBLM5112 TINY 7A MOSFET GATE DRIVE National Semiconductor |
3,623 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Low-Side | Single | 1 | N-Channel MOSFET | 3.5V ~ 14V | 0.8V, 2.3V | 3A, 7A | Inverting, Non-Inverting | - | 14ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
LM9061M/NOPBLM9061 HIGH-SIDE PROTECTION CONT Texas Instruments |
2,609 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side | Single | 1 | N-Channel MOSFET | 7V ~ 26V | 1.5V, 3.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
|
ISL89411IPMOSFET DRIVER, CMOS, PDIP8 Intersil |
2,174 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IR2118PBFIR2118 - GATE DRIVER International Rectifier |
3,043 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
1EDN7550B1EDN7550 - GATE DRIVER Infineon Technologies |
2,694 | - |
RFQ |
Ficha técnica |
Bulk | EiceDriver™ | Active | High-Side and Low-Side | Single | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | - | 4A, 8A | Inverting, Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
EL7457CLZ-T13BUFFER/INVERTER BASED MOSFET DRI Elantec |
2,339 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side or Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 13.5ns, 13ns | -40°C ~ 85°C (TA) | Surface Mount |
|
|
UCC27325PE4UCC27325 DUAL 4 A PEAK HIGH SPEE Unitrode |
300 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
FAN73611MX-OPSINGLE-CHANNEL HIGH-SIDE GATE DR Fairchild Semiconductor |
3,615 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 250mA, 500mA | Non-Inverting | 600 V | 70ns, 30ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
FAN3217TMXFULL BRIDGE BASED PERIPHERAL DRI Fairchild Semiconductor |
3,058 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS2184STRPBFIRS2184 - GATE DRIVER International Rectifier |
2,446 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
LM5107MAX/NOPBLM5107 100V / 1.4A PEAK HALF BRI National Semiconductor |
3,056 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 0.8V, 2.2V | 1.3A, 1.4A | Non-Inverting | 118 V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
FAN7383MXHB BASED PERIPHERAL DRIVER WITH Fairchild Semiconductor |
3,941 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 15V ~ 20V | 1.2V, 2.9V | 350mA, 650mA | Non-Inverting | 600 V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR2109STRPBFIR2109S - GATE DRIVER International Rectifier |
2,538 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
6ED003L06-FXUMA16ED003L06 - HALF-BRIDGE BASED MO Infineon Technologies |
2,866 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IRS2118STRPBFIRS2118 - SINGLE CHANNEL DRIVER International Rectifier |
2,716 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 290mA, 600mA | Inverting | 600 V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21084STRPBFHALF-BRIDGE BASED MOSFET DRIVER International Rectifier |
2,983 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
FAN7392MXHALF BRIDGE BASED PERIPHERAL DRI National Semiconductor |
2,764 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FAN7888MXHALF BRIDGE BASED PERIPHERAL DRI Fairchild Semiconductor |
2,874 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1V, 2.5V | 350mA, 650mA | Non-Inverting | 200 V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
FAN3268TMX-F085HALF BRIDGE BASED MOSFET DRIVER Fairchild Semiconductor |
2,078 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q100 | Active | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount |
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