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PMIC - Controladores de Puerta
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TC4424VOE713IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
3,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
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TC4424AVOE713IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
2,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
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TC4423VOEIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
3,237 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
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TC4424VOEIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
3,582 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4425VOEIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
2,198 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4424AVOEIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
2,245 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MIC4423ZWMIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
2,423 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Surface Mount |
|
TC4404EOA713IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,826 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Surface Mount |
|
|
TC4431EOA713IC GATE DRVR HI/LOW SIDE 8SOIC Microchip Technology |
2,473 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4405EOA713IC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,886 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Surface Mount |
|
|
TC4431VOAIC GATE DRVR HI/LOW SIDE 8SOIC Microchip Technology |
2,241 | - |
RFQ |
Ficha técnica |
Tube | - | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MIC4429ZTIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
3,587 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 12ns, 13ns | 0°C ~ 150°C (TJ) | Through Hole |
|
TC4431EPAIC GATE DRV HI-SIDE/LO-SIDE 8DIP Microchip Technology |
3,384 | - |
RFQ |
Ficha técnica |
Tube | - | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
TC4405EPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
2,690 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Through Hole |
|
|
TC4431VPAIC GATE DRV HI-SIDE/LO-SIDE 8DIP Microchip Technology |
2,408 | - |
RFQ |
Ficha técnica |
Tube | - | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole |
|
MD1812K6-GIC GATE DRVR HALF-BRIDGE 16QFN Microchip Technology |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Half-Bridge | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 13V | 0.3V, 1.7V | 2A, 2A | Non-Inverting | - | 6ns, 6ns | -25°C ~ 125°C (TA) | Surface Mount |
|
TC4420VATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
3,009 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
TC4429VATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
3,461 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole |
|
TC4421ESM713IC GATE DRVR LOW-SIDE 8SOIJ Microchip Technology |
2,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 60ns, 60ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4422ESMIC GATE DRVR LOW-SIDE 8SOIJ Microchip Technology |
3,021 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 60ns, 60ns | -40°C ~ 150°C (TJ) | Surface Mount |
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