PMIC - Controladores de Puerta

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
TC4429CAT

TC4429CAT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology
3,377 -

RFQ

TC4429CAT

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 25ns, 25ns 0°C ~ 150°C (TJ) Through Hole
TC4423VPA

TC4423VPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology
151 -

RFQ

TC4423VPA

Ficha técnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 3A, 3A Inverting - 23ns, 25ns -40°C ~ 150°C (TJ) Through Hole
TC4467CPD

TC4467CPD

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology
2,146 -

RFQ

TC4467CPD

Ficha técnica

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 15ns, 15ns 0°C ~ 150°C (TJ) Through Hole
MIC5011YM

MIC5011YM

IC GATE DRVR HI/LOW SIDE 8SOIC

Microchip Technology
2,513 -

RFQ

MIC5011YM

Ficha técnica

Tube - Active High-Side or Low-Side Single 1 N-Channel MOSFET 4.75V ~ 32V 2V, 4.5V - Non-Inverting - - -40°C ~ 150°C (TJ) Surface Mount
MIC5013YN

MIC5013YN

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Microchip Technology
2,002 -

RFQ

MIC5013YN

Ficha técnica

Tube - Active High-Side or Low-Side Single 1 N-Channel MOSFET 7V ~ 32V 2V, 4.5V - Non-Inverting - - -40°C ~ 85°C (TA) Through Hole
MIC5011YN

MIC5011YN

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Microchip Technology
3,721 -

RFQ

MIC5011YN

Ficha técnica

Tube - Active High-Side or Low-Side Single 1 N-Channel MOSFET 4.75V ~ 32V 2V, 4.5V - Non-Inverting - - -40°C ~ 150°C (TJ) Through Hole
TC4422MJA

TC4422MJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology
3,358 -

RFQ

TC4422MJA

Ficha técnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Non-Inverting - 60ns, 60ns -55°C ~ 150°C (TJ) Through Hole
2ASC-17A1HP

2ASC-17A1HP

DUAL-CHANNEL AUGMENTED CORE-1700

Microchip Technology
3,452 -

RFQ

Bulk - Active Half-Bridge Single 1 SiC MOSFET - - - - 1700 V - - Through Hole
MCP14A0303-E/MNY

MCP14A0303-E/MNY

IC GATE DRVR HI/LOW SIDE 8TDFN

Microchip Technology
430 -

RFQ

MCP14A0303-E/MNY

Ficha técnica

Tube - Active High-Side or Low-Side Independent 2 IGBT 4.5V ~ 18V 0.8V, 2V 3A, 3A Inverting - 12ns, 12ns -40°C ~ 125°C Surface Mount
MCP14A0451-E/MS

MCP14A0451-E/MS

IC GATE DRVR LOW-SIDE 8MSOP

Microchip Technology
988 -

RFQ

MCP14A0451-E/MS

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 4.5A, 4.5A Inverting - 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount
MCP14A0451-E/SN

MCP14A0451-E/SN

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
360 -

RFQ

MCP14A0451-E/SN

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 4.5A, 4.5A Inverting - 9.5ns, 9ns -40°C ~ 150°C (TJ) Surface Mount
MCP14A0601-E/MS

MCP14A0601-E/MS

IC GATE DRVR LOW-SIDE 8MSOP

Microchip Technology
476 -

RFQ

MCP14A0601-E/MS

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 6A, 6A Inverting - 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
MCP14A0601-E/SN

MCP14A0601-E/SN

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
356 -

RFQ

MCP14A0601-E/SN

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 6A, 6A Inverting - 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
TC1412NCOA

TC1412NCOA

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
470 -

RFQ

TC1412NCOA

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 16V 0.8V, 2V 2A, 2A Non-Inverting - 18ns, 18ns 0°C ~ 150°C (TJ) Surface Mount
TC1412EOA

TC1412EOA

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
389 -

RFQ

TC1412EOA

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 16V 0.8V, 2V 2A, 2A Inverting - 18ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
TC4427VUA

TC4427VUA

IC GATE DRVR LOW-SIDE 8MSOP

Microchip Technology
400 -

RFQ

TC4427VUA

Ficha técnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 19ns, 19ns -40°C ~ 125°C (TA) Surface Mount
TC429EOA

TC429EOA

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
3,314 -

RFQ

TC429EOA

Ficha técnica

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 7V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 23ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
MCP14E11-E/SN

MCP14E11-E/SN

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
250 -

RFQ

MCP14E11-E/SN

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 3A, 3A Inverting, Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
MCP14E8-E/SN

MCP14E8-E/SN

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology
127 -

RFQ

MCP14E8-E/SN

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 2A, 2A Inverting, Non-Inverting - 12ns, 15ns -40°C ~ 150°C (TJ) Surface Mount
MCP14E11-E/P

MCP14E11-E/P

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology
2,845 -

RFQ

MCP14E11-E/P

Ficha técnica

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 3A, 3A Inverting, Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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