Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
6N136V

6N136V

OPTOISO 2.5KV TRANS W/BASE 8DIP

onsemi
2,362 -

RFQ

6N136V

Ficha técnica

Tube - Obsolete 1 2500Vrms 19% @ 16mA 50% @ 16mA 450ns, 500ns - DC Transistor with Base 20V 8mA 1.45V 25 mA - -55°C ~ 100°C Through Hole
6N136WV

6N136WV

OPTOISO 2.5KV TRANS W/BASE 8DIP

onsemi
2,106 -

RFQ

6N136WV

Ficha técnica

Tube - Obsolete 1 2500Vrms 19% @ 16mA 50% @ 16mA 450ns, 300ns - DC Transistor with Base 20V 8mA 1.45V 25 mA - -55°C ~ 100°C Through Hole
6N138SDV

6N138SDV

OPTOISO 2.5KV DARL W/BASE 8SMD

onsemi
3,445 -

RFQ

6N138SDV

Ficha técnica

Tape & Reel (TR) - Obsolete 1 2500Vrms 300% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 7V 60mA 1.3V 20 mA - -40°C ~ 85°C Surface Mount
6N138SV

6N138SV

OPTOISO 2.5KV DARL W/BASE 8SMD

onsemi
2,908 -

RFQ

6N138SV

Ficha técnica

Tube - Obsolete 1 2500Vrms 300% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 7V 60mA 1.3V 20 mA - -40°C ~ 85°C Surface Mount
6N138V

6N138V

OPTOISO 2.5KV DARL W/BASE 8DIP

onsemi
2,203 -

RFQ

6N138V

Ficha técnica

Tube - Obsolete 1 2500Vrms 300% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 7V 60mA 1.3V 20 mA - -40°C ~ 85°C Through Hole
6N138WV

6N138WV

OPTOISO 2.5KV DARL W/BASE 8DIP

onsemi
2,290 -

RFQ

6N138WV

Ficha técnica

Tube - Obsolete 1 2500Vrms 300% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 7V 60mA 1.3V 20 mA - -40°C ~ 85°C Through Hole
6N139SDV

6N139SDV

OPTOISO 2.5KV DARL W/BASE 8SMD

onsemi
2,843 -

RFQ

6N139SDV

Ficha técnica

Tape & Reel (TR) - Obsolete 1 2500Vrms 500% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 18V 60mA 1.3V 20 mA - -40°C ~ 85°C Surface Mount
6N139SV

6N139SV

OPTOISO 2.5KV DARL W/BASE 8SMD

onsemi
3,346 -

RFQ

6N139SV

Ficha técnica

Tube - Obsolete 1 2500Vrms 500% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 18V 60mA 1.3V 20 mA - -40°C ~ 85°C Surface Mount
6N139V

6N139V

OPTOISO 2.5KV DARL W/BASE 8DIP

onsemi
2,198 -

RFQ

6N139V

Ficha técnica

Tube - Obsolete 1 2500Vrms 500% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 18V 60mA 1.3V 20 mA - -40°C ~ 85°C Through Hole
6N139WV

6N139WV

OPTOISO 2.5KV DARL W/BASE 8DIP

onsemi
2,954 -

RFQ

6N139WV

Ficha técnica

Tube - Obsolete 1 2500Vrms 500% @ 1.6mA - 1.5µs, 7µs - DC Darlington with Base 18V 60mA 1.3V 20 mA - -40°C ~ 85°C Through Hole
FOD817AW

FOD817AW

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
3,777 -

RFQ

FOD817AW

Ficha técnica

Box - Obsolete 1 5000Vrms 80% @ 5mA 160% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
FOD817W

FOD817W

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
3,446 -

RFQ

FOD817W

Ficha técnica

Box - Obsolete 1 5000Vrms 50% @ 5mA 600% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
FOD817CW

FOD817CW

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
3,902 -

RFQ

FOD817CW

Ficha técnica

Box - Obsolete 1 5000Vrms 200% @ 5mA 400% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
H11A2SM

H11A2SM

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
3,172 -

RFQ

H11A2SM

Ficha técnica

Tube - Obsolete 1 7500Vpk 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
HMA2701

HMA2701

OPTOISO 3.75KV TRANSISTOR 4SMD

onsemi
2,154 -

RFQ

HMA2701

Ficha técnica

Box - Obsolete 1 3750Vrms 50% @ 5mA 300% @ 5mA - 3µs, 3µs DC Transistor 40V 80mA 1.3V (Max) 50 mA 300mV -40°C ~ 100°C Surface Mount
H11A2SVM

H11A2SVM

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
3,252 -

RFQ

H11A2SVM

Ficha técnica

Tube - Obsolete 1 7500Vpk 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11A3VM

H11A3VM

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
3,801 -

RFQ

H11A3VM

Ficha técnica

Tube - Obsolete 1 7500Vpk 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 400mV -40°C ~ 100°C Through Hole
HMA121

HMA121

OPTOISO 3.75KV TRANSISTOR 4SMD

onsemi
3,248 -

RFQ

HMA121

Ficha técnica

Box - Obsolete 1 3750Vrms 50% @ 5mA 600% @ 5mA - 3µs, 3µs DC Transistor 80V 80mA 1.3V (Max) 50 mA 400mV -40°C ~ 100°C Surface Mount
FOD817BW

FOD817BW

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
2,837 -

RFQ

FOD817BW

Ficha técnica

Box - Obsolete 1 5000Vrms 130% @ 5mA 260% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
FOD817DW

FOD817DW

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
2,440 -

RFQ

FOD817DW

Ficha técnica

Box - Obsolete 1 5000Vrms 300% @ 5mA 600% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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