Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
HCPL0701

HCPL0701

OPTOCOUPLER DARL OUT 1CH 8-SOIC

onsemi
169 -

RFQ

HCPL0701

Ficha técnica

Tube - Active 1 2500Vrms 500% @ 1.6mA 2600% @ 1.6mA 300ns, 1.6µs - DC Darlington with Base 18V 60mA 1.25V 20 mA - -40°C ~ 85°C Surface Mount
4N25SR2VM

4N25SR2VM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
3,536 -

RFQ

4N25SR2VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 500mV -40°C ~ 100°C Surface Mount
FOD817C300

FOD817C300

OPTOISOLATOR 5KV TRANSISTOR 4DIP

onsemi
857 -

RFQ

FOD817C300

Ficha técnica

Tube - Active 1 5000Vrms 200% @ 5mA 400% @ 5mA - 4µs, 3µs DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 110°C Through Hole
4N28SM

4N28SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
400 -

RFQ

4N28SM

Ficha técnica

Tube - Active 1 4170Vrms 10% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 500mV -40°C ~ 100°C Surface Mount
CNY172SM

CNY172SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
900 -

RFQ

CNY172SM

Ficha técnica

Tube - Active 1 4170Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor with Base 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Surface Mount
4N35SVM

4N35SVM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
316 -

RFQ

4N35SVM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 300mV -40°C ~ 100°C Surface Mount
CNY17F3M

CNY17F3M

OPTOISO 4.17KV TRANS 6DIP

onsemi
847 -

RFQ

CNY17F3M

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Through Hole
MOC8106M

MOC8106M

OPTOISOLATOR 4.17KV TRANS 6DIP

onsemi
2,785 -

RFQ

MOC8106M

Ficha técnica

Tube - Active 1 4170Vrms 50% @ 10mA 150% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.15V 60 mA 400mV -40°C ~ 100°C Through Hole
4N33TVM

4N33TVM

OPTOISO 4.17KV DARL W/BASE 6DIP

onsemi
194 -

RFQ

4N33TVM

Ficha técnica

Tube - Active 1 4170Vrms 500% @ 10mA - 5µs, 100µs (Max) - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Through Hole
CNY171SM

CNY171SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
870 -

RFQ

CNY171SM

Ficha técnica

Tube - Active 1 4170Vrms 40% @ 10mA 80% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor with Base 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11B1M

H11B1M

OPTOISO 4.17KV DARL W/BASE 6DIP

onsemi
875 -

RFQ

H11B1M

Ficha técnica

Tube - Active 1 4170Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Through Hole
MOC8106SM

MOC8106SM

OPTOISOLATOR 4.17KV TRANS 6SMD

onsemi
319 -

RFQ

MOC8106SM

Ficha técnica

Tube - Active 1 4170Vrms 50% @ 10mA 150% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11B1SM

H11B1SM

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
285 -

RFQ

H11B1SM

Ficha técnica

Tube - Active 1 4170Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Surface Mount
H11AV1M

H11AV1M

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
923 -

RFQ

H11AV1M

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA 300% @ 10mA 15µs, 15µs (Max) - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Through Hole
4N29SM

4N29SM

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
150 -

RFQ

4N29SM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA - 5µs, 40µs (Max) - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Surface Mount
MCT9001S

MCT9001S

OPTOISO 5KV 2CH TRANSISTOR 8SMD

onsemi
869 -

RFQ

MCT9001S

Ficha técnica

Tube - Active 2 5000Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2.4µs, 2.4µs DC Transistor 55V 30mA 1V 60 mA 400mV -55°C ~ 100°C Surface Mount
4N30SM

4N30SM

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
992 -

RFQ

4N30SM

Ficha técnica

Bulk - Active 1 4170Vrms 100% @ 10mA - 5µs, 40µs (Max) - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Surface Mount
H11D3M

H11D3M

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
644 -

RFQ

H11D3M

Ficha técnica

Tube - Active 1 4170Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -40°C ~ 100°C Through Hole
H11AG1M

H11AG1M

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
428 -

RFQ

H11AG1M

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 1mA - 5µs, 5µs - DC Transistor with Base 30V 50mA 1.25V 50 mA 400mV -40°C ~ 100°C Through Hole
FOD2741BTV

FOD2741BTV

OPTOISOLATOR 5KV TRANSISTOR 8DIP

onsemi
118 -

RFQ

FOD2741BTV

Ficha técnica

Tube - Active 1 5000Vrms 100% @ 10mA 200% @ 10mA - - DC Transistor 30V 50mA 1.5V (Max) - 400mV -40°C ~ 85°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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