Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
H11D4S

H11D4S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,910 -

RFQ

H11D4S

Ficha técnica

Tube - Obsolete 1 5300Vrms 10% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D4SD

H11D4SD

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,392 -

RFQ

H11D4SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms 10% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D4W

H11D4W

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,231 -

RFQ

H11D4W

Ficha técnica

Tube - Obsolete 1 5300Vrms 10% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11F1300

H11F1300

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
2,978 -

RFQ

H11F1300

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F1300W

H11F1300W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
3,197 -

RFQ

H11F1300W

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F13S

H11F13S

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
3,050 -

RFQ

H11F13S

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F13SD

H11F13SD

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
3,660 -

RFQ

H11F13SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F1S

H11F1S

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
3,152 -

RFQ

H11F1S

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F1SD

H11F1SD

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
2,777 -

RFQ

H11F1SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F1W

H11F1W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
2,431 -

RFQ

H11F1W

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F2300

H11F2300

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
3,824 -

RFQ

H11F2300

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F2300W

H11F2300W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
3,825 -

RFQ

H11F2300W

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F23S

H11F23S

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
3,656 -

RFQ

H11F23S

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F23SD

H11F23SD

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
2,804 -

RFQ

H11F23SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F2S

H11F2S

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
3,050 -

RFQ

H11F2S

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F2SD

H11F2SD

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
2,840 -

RFQ

H11F2SD

Ficha técnica

Tape & Reel (TR) - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
H11F2W

H11F2W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
3,047 -

RFQ

H11F2W

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 30V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F3300

H11F3300

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
2,718 -

RFQ

H11F3300

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 15V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F3300W

H11F3300W

OPTOISOLTR 5.3KV PHOTO FET 6-DIP

onsemi
2,449 -

RFQ

H11F3300W

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 15V - 1.3V 60 mA - -55°C ~ 100°C Through Hole
H11F33S

H11F33S

OPTOISOLTR 5.3KV PHOTO FET 6-SMD

onsemi
2,092 -

RFQ

H11F33S

Ficha técnica

Tube - Obsolete 1 5300Vrms - - 25µs, 25µs (Max) - DC MOSFET 15V - 1.3V 60 mA - -55°C ~ 100°C Surface Mount
Total 2212 Record«Prev1... 5960616263646566...111Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario