Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
HCPL2731S

HCPL2731S

OPTOISO 2.5KV 2CH DARL 8SMD

onsemi
3,236 -

RFQ

HCPL2731S

Ficha técnica

Tube - Last Time Buy 2 2500Vrms 500% @ 1.6mA - 300ns, 5µs - DC Darlington 18V 60mA 1.3V 20 mA - -40°C ~ 85°C Surface Mount
H11F3M

H11F3M

OPTOISOLTR 7.5KV PHOTO FET 6-DIP

onsemi
2,865 -

RFQ

H11F3M

Ficha técnica

Tube - Active 1 7500Vpk - - 45µs, 45µs (Max) - DC MOSFET 15V - 1.3V 60 mA - -40°C ~ 100°C Through Hole
MOC211R2M

MOC211R2M

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
2,952 -

RFQ

MOC211R2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 2500Vrms 20% @ 10mA - 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
MOC207R2VM

MOC207R2VM

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
3,894 -

RFQ

MOC207R2VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 2500Vrms 100% @ 10mA 200% @ 10mA 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
CNY17F3SR2VM

CNY17F3SR2VM

OPTOISO 4.17KV TRANS 6SMD

onsemi
3,844 -

RFQ

CNY17F3SR2VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AA4SR2VM

H11AA4SR2VM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,780 -

RFQ

H11AA4SR2VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 100% @ 10mA - - - AC, DC Transistor with Base 30V 50mA 1.17V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11G2SR2M

H11G2SR2M

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
2,020 -

RFQ

H11G2SR2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active 1 4170Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 80V - 1.3V 60 mA 1V -40°C ~ 100°C Surface Mount
CNY174M

CNY174M

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
2,231 -

RFQ

CNY174M

Ficha técnica

Tube - Active 1 4170Vrms 160% @ 10mA 320% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor with Base 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Through Hole
FOD814S

FOD814S

OPTOISOLATOR 5KV TRANSISTOR 4SMD

onsemi
3,381 -

RFQ

FOD814S

Ficha técnica

Bulk,Tube - Active 1 5000Vrms 20% @ 1mA 300% @ 1mA - 4µs, 3µs AC, DC Transistor 70V 50mA 1.2V 50 mA 200mV -55°C ~ 105°C Surface Mount
4N25VM

4N25VM

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
2,088 -

RFQ

4N25VM

Ficha técnica

Tube - Active 1 4170Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 500mV -40°C ~ 100°C Through Hole
MOC205M

MOC205M

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
3,788 -

RFQ

MOC205M

Ficha técnica

Tube - Active 1 2500Vrms 40% @ 10mA 80% @ 10mA 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
6N135SDM

6N135SDM

OPTOISO 5KV TRANS W/BASE 8SMD

onsemi
2,313 -

RFQ

6N135SDM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 7% @ 16mA 50% @ 16mA 230ns, 450ns - DC Transistor with Base 20V 8mA 1.45V 25 mA - -40°C ~ 100°C Surface Mount
4N37TVM

4N37TVM

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
3,717 -

RFQ

4N37TVM

Ficha técnica

Bulk,Tube - Active 1 4170Vrms 100% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 300mV -40°C ~ 100°C Through Hole
CNY17F3TVM

CNY17F3TVM

OPTOISO 4.17KV TRANS 6DIP

onsemi
2,808 -

RFQ

CNY17F3TVM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Through Hole
4N32TVM

4N32TVM

OPTOISO 4.17KV DARL W/BASE 6DIP

onsemi
3,485 -

RFQ

4N32TVM

Ficha técnica

Bulk,Tube - Active 1 4170Vrms 500% @ 10mA - 5µs, 100µs (Max) - DC Darlington with Base 30V 150mA 1.2V 80 mA 1V -40°C ~ 100°C Through Hole
H11AV1AM

H11AV1AM

OPTOISO 4.17KV TRANS W/BASE 6DIP

onsemi
2,052 -

RFQ

H11AV1AM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA 300% @ 10mA 15µs, 15µs (Max) - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Through Hole
H11AV1SM

H11AV1SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,962 -

RFQ

H11AV1SM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA 300% @ 10mA 15µs, 15µs (Max) - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
MCT61S

MCT61S

OPTOISO 5KV 2CH TRANSISTOR 8SMD

onsemi
3,403 -

RFQ

MCT61S

Ficha técnica

Tube - Active 2 5000Vrms 50% @ 5mA - 2.4µs, 2.4µs - DC Transistor 30V 30mA 1.2V 60 mA 400mV -55°C ~ 100°C Surface Mount
H11G1SM

H11G1SM

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
2,331 -

RFQ

H11G1SM

Ficha técnica

Tube - Active 1 4170Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 100V - 1.3V 60 mA 1V -40°C ~ 100°C Surface Mount
H11D3SM

H11D3SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,487 -

RFQ

H11D3SM

Ficha técnica

Tube - Active 1 4170Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 200V 100mA 1.15V 80 mA 400mV -40°C ~ 100°C Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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