Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
HMHA2801

HMHA2801

OPTOISO 3.75KV TRANSISTOR 4SMD

onsemi
2,018 -

RFQ

HMHA2801

Ficha técnica

Bulk,Tube - Active 1 3750Vrms 80% @ 5mA 600% @ 5mA - 3µs, 3µs DC Transistor 80V 50mA 1.3V (Max) 50 mA 300mV -55°C ~ 100°C Surface Mount
MOC213M

MOC213M

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
3,541 -

RFQ

MOC213M

Ficha técnica

Tube - Active 1 2500Vrms 100% @ 10mA - 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
4N25SM

4N25SM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,154 -

RFQ

4N25SM

Ficha técnica

Tube - Active 1 4170Vrms 20% @ 10mA - 2µs, 2µs - DC Transistor with Base 30V - 1.18V 60 mA 500mV -55°C ~ 100°C Surface Mount
MOC8050M

MOC8050M

OPTOISO 4.17KV DARLINGTON 6DIP

onsemi
2,896 -

RFQ

MOC8050M

Ficha técnica

Tube - Active 1 4170Vrms 500% @ 10mA - 8.5µs, 95µs - DC Darlington 80V 150mA 1.18V 60 mA - -40°C ~ 100°C Through Hole
MOC217M

MOC217M

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
2,954 -

RFQ

MOC217M

Ficha técnica

Tube - Active 1 2500Vrms 100% @ 10mA - 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.07V 60 mA 400mV -40°C ~ 100°C Surface Mount
CNY172SR2M

CNY172SR2M

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,807 -

RFQ

CNY172SR2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 63% @ 10mA 125% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor with Base 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Surface Mount
HMHA2801AR2

HMHA2801AR2

OPTOISO 3.75KV TRANS 4-MINI-FLAT

onsemi
2,896 -

RFQ

HMHA2801AR2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active 1 3750Vrms 80% @ 5mA 160% @ 5mA - 3µs, 3µs DC Transistor 80V 50mA 1.3V (Max) 50 mA 300mV -55°C ~ 100°C Surface Mount
CNY17F3SR2M

CNY17F3SR2M

OPTOISO 4.17KV TRANS 6SMD

onsemi
3,292 -

RFQ

CNY17F3SR2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 100% @ 10mA 200% @ 10mA 2µs, 3µs 4µs, 3.5µs (Max) DC Transistor 70V 50mA 1.35V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AA1SR2VM

H11AA1SR2VM

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,425 -

RFQ

H11AA1SR2VM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 20% @ 10mA - - - AC, DC Transistor with Base 30V 50mA 1.17V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AV1SR2M

H11AV1SR2M

OPTOISO 4.17KV TRANS W/BASE 6SMD

onsemi
2,187 -

RFQ

H11AV1SR2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 100% @ 10mA 300% @ 10mA 15µs, 15µs (Max) - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
MOC8050SR2M

MOC8050SR2M

OPTOISO 4.17KV DARLINGTON 6SMD

onsemi
2,827 -

RFQ

MOC8050SR2M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 4170Vrms 500% @ 10mA - 8.5µs, 95µs - DC Darlington 80V 150mA 1.18V 60 mA - -40°C ~ 100°C Surface Mount
MCT61SD

MCT61SD

OPTOISO 5KV 2CH TRANSISTOR 8SMD

onsemi
3,572 -

RFQ

MCT61SD

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 5000Vrms 50% @ 5mA - 2.4µs, 2.4µs - DC Transistor 30V 30mA 1.2V 60 mA 400mV -55°C ~ 100°C Surface Mount
MOC223M

MOC223M

OPTOISO 2.5KV DARL W/BASE 8SOIC

onsemi
3,381 -

RFQ

MOC223M

Ficha técnica

Bulk,Tube - Active 1 2500Vrms 500% @ 1mA - 10µs, 125µs 8µs, 110µs DC Darlington with Base 30V 150mA 1.08V 60 mA 1V -40°C ~ 100°C Surface Mount
H11G2SM

H11G2SM

OPTOISO 4.17KV DARL W/BASE 6SMD

onsemi
2,188 -

RFQ

H11G2SM

Ficha técnica

Tube - Active 1 4170Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 80V - 1.3V 60 mA 1V -40°C ~ 100°C Surface Mount
H11G1TVM

H11G1TVM

OPTOISO 4.17KV DARL W/BASE 6DIP

onsemi
2,797 -

RFQ

H11G1TVM

Ficha técnica

Tube - Active 1 4170Vrms 1000% @ 10mA - 5µs, 100µs - DC Darlington with Base 100V - 1.3V 60 mA 1V -40°C ~ 100°C Through Hole
MOC8021M

MOC8021M

OPTOISO 4.17KV DARLINGTON 6DIP

onsemi
2,262 -

RFQ

MOC8021M

Ficha técnica

Tube - Active 1 4170Vrms 1000% @ 10mA - 8.5µs, 95µs - DC Darlington 50V 150mA 1.18V 60 mA - -40°C ~ 100°C Through Hole
H11AA4SM

H11AA4SM

OPTOISO 4.17KV TRANS W/BASE 6SOP

onsemi
3,933 -

RFQ

H11AA4SM

Ficha técnica

Tube - Active 1 4170Vrms 100% @ 10mA - - - AC, DC Transistor with Base 30V 50mA 1.17V 60 mA 400mV -40°C ~ 100°C Surface Mount
MOC207M

MOC207M

OPTOISO 2.5KV TRANS W/BASE 8SOIC

onsemi
2,099 -

RFQ

MOC207M

Ficha técnica

Box - Active 1 2500Vrms 100% @ 10mA 200% @ 10mA 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor with Base 30V 150mA 1.15V 60 mA 400mV -40°C ~ 100°C Surface Mount
MOCD208M

MOCD208M

OPTOISO 2.5KV 2CH TRANS 8SOIC

onsemi
2,164 -

RFQ

MOCD208M

Ficha técnica

Tube - Active 2 2500Vrms 40% @ 10mA 125% @ 10mA 7.5µs, 5.7µs 3.2µs, 4.7µs DC Transistor 70V 150mA 1.25V 60 mA 400mV -40°C ~ 100°C Surface Mount
MCT62S

MCT62S

OPTOISO 5KV 2CH TRANSISTOR 8SMD

onsemi
3,493 -

RFQ

MCT62S

Ficha técnica

Tube - Active 2 5000Vrms 100% @ 5mA - 2.4µs, 2.4µs - DC Transistor 30V 30mA 1.2V 60 mA 400mV -55°C ~ 100°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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