Optoaisladores - Salida de transistor, fotovoltaica

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
TLP292-4(V4-TR,E

TLP292-4(V4-TR,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,176 -

RFQ

TLP292-4(V4-TR,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 4 3750Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP388(D4-TPL,E

TLP388(D4-TPL,E

TRANSISTOR OPTOCOUPLER HIGH VCEO

Toshiba Semiconductor and Storage
3,657 -

RFQ

TLP388(D4-TPL,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 350V 50mA 1.25V 50 mA 400mV -55°C ~ 125°C Surface Mount
TLP293-4(E

TLP293-4(E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
2,527 -

RFQ

TLP293-4(E

Ficha técnica

Tube - Active 4 3750Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP293-4(V4,E

TLP293-4(V4,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,786 -

RFQ

TLP293-4(V4,E

Ficha técnica

Tube - Active 4 3750Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP109(E

TLP109(E

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Toshiba Semiconductor and Storage
3,350 -

RFQ

TLP109(E

Ficha técnica

Tube - Active 1 3750Vrms 20% @ 16mA - 800ns, 800ns (Max) - DC Transistor 20V 8mA 1.64V 20 mA - -55°C ~ 125°C Surface Mount
TLX9160T(TPL,F

TLX9160T(TPL,F

PHOTORELAY; SO16L-T; AECQ; ROHS;

Toshiba Semiconductor and Storage
3,390 -

RFQ

TLX9160T(TPL,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active 2 5000Vrms - - 1ms, 1ms (Max) - DC MOSFET - - 1.65V 20 mA - -40°C ~ 125°C Surface Mount
TLP185(GRH-TL,SE

TLP185(GRH-TL,SE

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Toshiba Semiconductor and Storage
2,430 -

RFQ

TLP185(GRH-TL,SE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 3750Vrms 150% @ 5mA 300% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 110°C Surface Mount
TLP184(GB-TPL,SE

TLP184(GB-TPL,SE

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Toshiba Semiconductor and Storage
2,185 -

RFQ

TLP184(GB-TPL,SE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 3750Vrms 100% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 110°C Surface Mount
TLP184(GR-TPL,SE

TLP184(GR-TPL,SE

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Toshiba Semiconductor and Storage
2,813 -

RFQ

TLP184(GR-TPL,SE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 3750Vrms 100% @ 5mA 300% @ 5mA 3µs, 3µs 2µs, 3µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 110°C Surface Mount
TLP387(TPL,E

TLP387(TPL,E

TRANSISTOR OPTOCOUPLER HIGH VCEO

Toshiba Semiconductor and Storage
2,625 -

RFQ

TLP387(TPL,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 5000Vrms 1000% @ 1mA - 50µs, 15µs 40µs, 15µs DC Darlington 300V 150mA 1.25V 50 mA 1V -55°C ~ 110°C Surface Mount
TLP293-4(V4LATPE

TLP293-4(V4LATPE

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,740 -

RFQ

TLP293-4(V4LATPE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 4 3750Vrms 50% @ 500µA 600% @ 500µA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP293-4(V4LATRE

TLP293-4(V4LATRE

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
2,528 -

RFQ

TLP293-4(V4LATRE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 4 3750Vrms 50% @ 500µA 600% @ 500µA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP292-4(TP,E

TLP292-4(TP,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,522 -

RFQ

TLP292-4(TP,E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 4 3750Vrms 50% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP292-4(V4GBTPE

TLP292-4(V4GBTPE

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,348 -

RFQ

TLP292-4(V4GBTPE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 4 3750Vrms 100% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP290(GB,SE

TLP290(GB,SE

OPTOISOLATOR 3.75KV TRANS 4-SO

Toshiba Semiconductor and Storage
3,166 -

RFQ

TLP290(GB,SE

Ficha técnica

Tube - Not For New Designs 1 3750Vrms 100% @ 5mA 400% @ 5mA 7µs, 7µs 4µs, 7µs AC, DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 110°C Surface Mount
TLP2309(E)

TLP2309(E)

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Toshiba Semiconductor and Storage
3,294 -

RFQ

TLP2309(E)

Ficha técnica

Tube - Active 1 3750Vrms 15% @ 16mA - 1µs, 1µs (Max) - DC Transistor 20V 8mA 1.55V 25 mA - -40°C ~ 110°C Surface Mount
TLP293-4(LA,E

TLP293-4(LA,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
2,309 -

RFQ

TLP293-4(LA,E

Ficha técnica

Tube - Active 4 3750Vrms 50% @ 500µA 600% @ 500µA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP293-4(LGB,E

TLP293-4(LGB,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,034 -

RFQ

TLP293-4(LGB,E

Ficha técnica

Tube - Active 4 3750Vrms 100% @ 500µA 600% @ 500µA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP293-4(V4-GB,E

TLP293-4(V4-GB,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,662 -

RFQ

TLP293-4(V4-GB,E

Ficha técnica

Tube - Active 4 3750Vrms 100% @ 5mA 600% @ 5mA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
TLP293-4(V4LGB,E

TLP293-4(V4LGB,E

OPTOISOLATOR 3.75KV TRANS SO16

Toshiba Semiconductor and Storage
3,385 -

RFQ

TLP293-4(V4LGB,E

Ficha técnica

Tube - Active 4 3750Vrms 100% @ 500µA 600% @ 500µA 3µs, 3µs 2µs, 3µs DC Transistor 80V 50mA 1.25V 50 mA 300mV -55°C ~ 125°C Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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