Sensores ópticos: fotodiodos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus Wavelength Color-Enhanced SpectralRange DiodeType Responsivity@nm ResponseTime Voltage-DCReverse(Vr)(Max) Current-Dark(Typ) ActiveArea ViewingAngle OperatingTemperature MountingType
MTAPD-07-016-905F

MTAPD-07-016-905F

SENSOR PHOTODIODE 905NM 6SMD

Marktech Optoelectronics
2,075 -

RFQ

MTAPD-07-016-905F

Ficha técnica

Bag - Active 905nm - 400nm ~ 1100nm Avalanche 55 A/W @ 905nm 600ps 200 V 400pA 500µm Dia - -20°C ~ 85°C Surface Mount
MT03-027

MT03-027

PHOTODIODE 950NM 10MM2 TO-5 ISO

Marktech Optoelectronics
3,184 -

RFQ

MT03-027

Ficha técnica

Bulk - Active 950nm - 350nm ~ 1100nm - - - - - 10mm² - - Through Hole
ODA-6W-500M

ODA-6W-500M

SENSOR PHOTODIODE 940NM TO39

Opto Diode Corp
3,621 -

RFQ

ODA-6W-500M

Ficha técnica

Tray Hybrid Active 940nm Infrared (NIR)/Red 400nm ~ 1100nm - - - - - 6mm² - -25°C ~ 100°C Through Hole
MTAPD-05-003

MTAPD-05-003

SENSOR PHOTODIODE 800NM TO5

Marktech Optoelectronics
2,119 -

RFQ

MTAPD-05-003

Ficha técnica

Bulk - Active 800nm Infrared (NIR) 450nm ~ 1050nm Avalanche 50 A/W @ 800nm - 200 V - 500µm Dia - -20°C ~ 55°C Through Hole
C30659-900-R5BH

C30659-900-R5BH

SI APD + AMP, TO-8, 200MHZ

Excelitas Technologies
3,124 -

RFQ

C30659-900-R5BH

Ficha técnica

Bulk C30659 Active 900nm - 400nm ~ 1100nm Avalanche 460 KV/W @ 830nm, 400 KV/W @ 900nm 2ns - - 0.2mm² - -40°C ~ 70°C Through Hole
GUVA-T13GD

GUVA-T13GD

UV-A SENSOR (220-370NM)

Genicom Co., Ltd.
2,651 -

RFQ

GUVA-T13GD

Ficha técnica

Tray - Active - Ultraviolet (UV) 220nm ~ 370nm Schottky 0.18 A/W @ 350nm - 5 V 1nA (Max) 0.08mm² - -30°C ~ 85°C Through Hole
GUVV-T10GD

GUVV-T10GD

UV-A SENSOR (230-395NM)

Genicom Co., Ltd.
2,893 -

RFQ

GUVV-T10GD

Ficha técnica

Tray - Active - Ultraviolet (UV) 230nm ~ 395nm Schottky 0.12 A/W @ 350nm - 2 V 1nA (Max) 0.08mm² - -30°C ~ 85°C Through Hole
GUVCL-T10GD

GUVCL-T10GD

UV-C LED SENSOR (230-320NM)

Genicom Co., Ltd.
2,857 -

RFQ

GUVCL-T10GD

Ficha técnica

Tray - Active - Ultraviolet (UV) 230nm ~ 320nm Schottky 0.1 A/W @ 280nm - 3 V 1nA (Max) 0.08mm² - -30°C ~ 85°C Through Hole
GUVC-T10GD-L185

GUVC-T10GD-L185

UV(185NM) SENSOR

Genicom Co., Ltd.
2,848 -

RFQ

GUVC-T10GD-L185

Ficha técnica

Tray - Active - Ultraviolet (UV) - Schottky - - 2 V 20nA (Max) 1.54mm² - -30°C ~ 85°C Through Hole
QSE973

QSE973

PIN PHOTODIODE

Fairchild Semiconductor
3,925 -

RFQ

QSE973

Ficha técnica

Bulk - Obsolete 930nm - - PIN - 50ns 32 V 30nA - 90° -40°C ~ 85°C Through Hole
C30737MH-230-80A

C30737MH-230-80A

230UM SI APD IN FR4 SMD 800NM

Excelitas Technologies
2,867 -

RFQ

C30737MH-230-80A

Ficha técnica

Box C30737 Active 800nm - 500nm ~ 1000nm Avalanche 50 A/W @ 800nm 200ps 210 V 50pA 230µm Dia - -40°C ~ 85°C Surface Mount
C30737MH-230-90C

C30737MH-230-90C

230UM SI APD IN FR4 SMD 900NM

Excelitas Technologies
2,444 -

RFQ

C30737MH-230-90C

Ficha técnica

Box C30737 Active 900nm - 500nm ~ 1000nm Avalanche 60 A/W @ 900nm 900ps 260 V 50pA 230µm Dia - -40°C ~ 85°C Surface Mount
KPDE086S-H8-B

KPDE086S-H8-B

INGAAS PHOTODIODE 860X860UM 900-

CEL
3,416 -

RFQ

KPDE086S-H8-B

Ficha técnica

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 20 V 1nA 0.86mm² - -40°C ~ 85°C Through Hole
AFBR-S4N66P024M

AFBR-S4N66P024M

SIPM PCB 2X1 6MM 40UM NUV-MT

Broadcom Limited
3,477 -

RFQ

AFBR-S4N66P024M

Ficha técnica

Tray AFBR Active 420nm - 360nm ~ 900nm - - - 32.5 V 8.6µA 36.00mm² - 0°C ~ 60°C Surface Mount
KPDA050P-H8-B

KPDA050P-H8-B

SI APD AVALANCHE PHOTODIODE 500U

CEL
3,624 -

RFQ

KPDA050P-H8-B

Ficha técnica

Bag - Active 780nm - 400nm ~ 1000nm Avalanche 0.45 A/W @ 850nm - 200 V 20pA 0.5mm Dia - -40°C ~ 85°C Through Hole
MICROFJ-40035-TSV-TR1

MICROFJ-40035-TSV-TR1

SENSOR PHOTODIODE 420NM 14WBGA

onsemi
3,025 -

RFQ

MICROFJ-40035-TSV-TR1

Ficha técnica

Strip J-SERIES SIPM Active 420nm - 200nm ~ 900nm Avalanche - 110ps 24.7 V 3µA 15.45mm² - -40°C ~ 85°C Surface Mount
KPDE150-H45-B

KPDE150-H45-B

INGAAS PHOTODIODE 1500UM 900-17

CEL
2,786 -

RFQ

KPDE150-H45-B

Ficha técnica

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 2 V 1nA 1.5mm Dia - -20°C ~ 70°C Through Hole
KPDA100P-H8-B

KPDA100P-H8-B

SI APD AVALANCHE PHOTODIODE 1000

CEL
3,341 -

RFQ

KPDA100P-H8-B

Ficha técnica

Bag - Active 780nm - 400nm ~ 1000nm Avalanche 0.45 A/W @ 850nm - 200 V 30pA 1mm Dia - -40°C ~ 85°C Through Hole
C30642GH-LC

C30642GH-LC

INGAAS PIN, 2.0MM, TO-18, GLASS

Excelitas Technologies
2,620 -

RFQ

C30642GH-LC

Ficha técnica

Box - Active 850nm, 1300nm, 1550nm - 800nm ~ 1700nm PIN 0.2 A/W @ 850nm, 0.9 A/W @ 1300nm, 0.95 A/W @ 1550nm 9ns - 2nA 3.1mm² - -40°C ~ 85°C
ARRAYJ-30020-16P-PCB

ARRAYJ-30020-16P-PCB

SENSOR PHOTODIODE 420NM MODULE

onsemi
2,263 -

RFQ

ARRAYJ-30020-16P-PCB

Ficha técnica

Bulk J-SERIES SIPM Active 420nm - - - - - - - 9mm² - - Socketable
Total 1361 Record«Prev1... 1415161718192021...69Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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