Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
HM4-6514-8

HM4-6514-8

1024 X 4 CMOS RAM

Harris Corporation
3,909 -

RFQ

HM4-6514-8

Ficha técnica

Bulk * Active - - - - - - - - - - -
8102402VA

8102402VA

1024 X 4 CMOS RAM

Harris Corporation
3,407 -

RFQ

8102402VA

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Synchronous 4Kb (1K x 4) Parallel - 170ns 120 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
IM6654MJG/883B

IM6654MJG/883B

4096-BIT CMOS UV EPROM

Harris Corporation
3,200 -

RFQ

IM6654MJG/883B

Ficha técnica

Bulk - Active Non-Volatile EPROM EPROM - UV 4Kb (512 x 8) Parallel - - 600 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
MWS5101EL2X

MWS5101EL2X

256X4-BIT STANDARD SRAM

Harris Corporation
2,678 -

RFQ

MWS5101EL2X

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Synchronous 1Kb (256 x 4) Parallel - 300ns 250 ns 4V ~ 6.5V 0°C ~ 70°C (TA) Through Hole
CDP1824CD

CDP1824CD

32-WORD X 8-BIT SRAM

Harris Corporation
2,239 -

RFQ

CDP1824CD

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Asynchronous 256b (32 x 8) Parallel - - 710 ns 4V ~ 6.5V -40°C ~ 85°C (TA) Through Hole
MWS5101DL3X

MWS5101DL3X

256X4-BIT STANDARD SRAM

Harris Corporation
3,445 -

RFQ

Bulk * Active - - - - - - - - - - -
CDM5114CD3

CDM5114CD3

1024-WORD X 4-BIT SRAM

Harris Corporation
3,041 -

RFQ

CDM5114CD3

Ficha técnica

Bulk * Active - - - - - - - - - - -
CDP1823EX

CDP1823EX

128 X 8 STANDARD SRAM

Harris Corporation
2,839 -

RFQ

CDP1823EX

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Kb (128 x 8) Parallel - 225ns 250 ns 4V ~ 10.5V -40°C ~ 85°C (TA) Through Hole
MWS5101AEL2

MWS5101AEL2

256X4-BIT STANDARD SRAM

Harris Corporation
2,659 -

RFQ

MWS5101AEL2

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Kb (256 x 4) Parallel - 300ns 250 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
CDP18U42CD

CDP18U42CD

256-WORD X 8 STATIC EPROM

Harris Corporation
2,754 -

RFQ

CDP18U42CD

Ficha técnica

Bulk * Active - - - - - - - - - - -
CDAC374M96

CDAC374M96

CDAC374M96

Harris Corporation
2,729 -

RFQ

Bulk * Active - - - - - - - - - - -
HM1-6514-9X136

HM1-6514-9X136

1024 X 4 CMOS STATIC RAM

Harris Corporation
2,457 -

RFQ

Bulk * Active - - - - - - - - - - -
CDP1824CDX

CDP1824CDX

32-WORD X 8-BIT SRAM

Harris Corporation
3,258 -

RFQ

CDP1824CDX

Ficha técnica

Bulk - Active Volatile SRAM SRAM - Asynchronous 256b (32 x 8) Parallel - - 710 ns 4V ~ 6.5V -40°C ~ 85°C (TA) Through Hole
HM4-6617B-9

HM4-6617B-9

2K X 8 CMOS PROM

Harris Corporation
2,841 -

RFQ

HM4-6617B-9

Ficha técnica

Bulk - Active Non-Volatile PROM - 16Kb (2K x 8) Parallel - - 105 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Surface Mount
HM1-65162B-9

HM1-65162B-9

STANDARD SRAM, 2KX8, 70NS

Harris Corporation
2,550 -

RFQ

HM1-65162B-9

Ficha técnica

Bulk * Active - - - - - - - - - - -
Total 95 Record«Prev12345Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario