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Memoria
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | MemoryType | MemoryFormat | Technology | MemorySize | MemoryInterface | ClockFrequency | WriteCycleTime-WordPage | AccessTime | Voltage-Supply | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DS28E04S-100+IC EEPROM 4KBIT 1-WIRE 16SOIC Analog Devices Inc./Maxim Integrated |
3,738 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | EEPROM | EEPROM | 4Kb (256 x 16) | 1-Wire® | - | - | 2 µs | - | -40°C ~ 85°C (TA) | Surface Mount |
|
DS1230AB-100+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
323 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 100ns | 100 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1230Y-70+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
2,999 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 70ns | 70 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1230Y-100+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
3,499 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 100ns | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1230Y-150+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
2,499 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 150ns | 150 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
DS2502P+T&RIC EPROM 1KBIT 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
3,326 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Non-Volatile | EPROM | EPROM - OTP | 1Kb (128 x 8) | 1-Wire® | - | - | - | 2.8V ~ 6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
DS28E01P-100+IC EEPROM 1KBIT 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
3,717 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | EEPROM | EEPROM | 1Kb (256 x 4) | 1-Wire® | - | - | 2 µs | 2.85V ~ 5.25V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
DS2502P-E48+IC EPROM 1KBIT 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
3,335 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | EPROM | EPROM - OTP | 1Kb (128 x 8) | 1-Wire® | - | - | - | 2.8V ~ 6V | -40°C ~ 85°C (TA) | Surface Mount |
|
DS1220AD-100+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
2,009 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 100ns | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1220AD-100IND+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
3,235 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 100ns | 100 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1225AD-200IND+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
2,862 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 200ns | 200 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1230AB-70+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
3,722 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 70ns | 70 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1230AB-120+IC NVSRAM 256KBIT PAR 28EDIP Analog Devices Inc./Maxim Integrated |
160 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 120ns | 120 ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole |
|
DS2502X1+IC EPROM 1KBIT 1-WIRE 4WLP Analog Devices Inc./Maxim Integrated |
2,864 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | - | Active | Non-Volatile | EPROM | EPROM - OTP | 1Kb (128 x 8) | 1-Wire® | - | - | - | 2.8V ~ 6V | -40°C ~ 85°C (TA) | Surface Mount |
|
|
DS1220Y-100+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
2,085 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 100ns | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1220Y-150+IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated |
2,051 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 150ns | 150 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
DS1225Y-150IND+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
2,002 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 150ns | 150 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS1225Y-200IND+IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated |
3,856 | - |
RFQ |
Ficha técnica |
Tube | - | Obsolete | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 200ns | 200 ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Through Hole |
|
|
DS28E01P-100+TIC EEPROM 1KBIT 1-WIRE 6TSOC Analog Devices Inc./Maxim Integrated |
3,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Non-Volatile | EEPROM | EEPROM | 1Kb (256 x 4) | 1-Wire® | - | - | 2 µs | 2.85V ~ 5.25V | -40°C ~ 85°C (TA) | Surface Mount |
|
DS24B33G+T&RIC EEPROM 4KBIT 1-WIRE 2SFN Analog Devices Inc./Maxim Integrated |
2,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Non-Volatile | EEPROM | EEPROM | 4Kb (256 x 16) | 1-Wire® | - | - | 2 µs | 2.8V ~ 5.25V | -40°C ~ 85°C (TA) | Surface Mount |
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