Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29F4G08ABADAWP-IT:D

MT29F4G08ABADAWP-IT:D

IC FLASH 4GBIT PARALLEL 48TSOP I

Micron Technology Inc.
2,147 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND 4Gb (512M x 8) Parallel - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT46H64M16LFBF-5 IT:B TR

MT46H64M16LFBF-5 IT:B TR

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.
3,972 -

RFQ

MT46H64M16LFBF-5 IT:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Volatile DRAM SDRAM - Mobile LPDDR 1Gb (64M x 16) Parallel 200 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT41K128M16JT-125 AIT:K TR

MT41K128M16JT-125 AIT:K TR

IC DRAM 2GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,978 -

RFQ

MT41K128M16JT-125 AIT:K TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 2Gb (128M x 16) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT46H64M16LFBF-5 AIT:B TR

MT46H64M16LFBF-5 AIT:B TR

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.
3,401 -

RFQ

MT46H64M16LFBF-5 AIT:B TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR 1Gb (64M x 16) Parallel 200 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT28EW128ABA1HJS-0SIT

MT28EW128ABA1HJS-0SIT

IC FLASH 128MBIT PARALLEL 56TSOP

Micron Technology Inc.
3,980 -

RFQ

MT28EW128ABA1HJS-0SIT

Ficha técnica

Tray - Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8, 8M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT25QL512ABB8ESF-0SIT TR

MT25QL512ABB8ESF-0SIT TR

IC FLASH 512MBIT SPI 16SOP2

Micron Technology Inc.
2,271 -

RFQ

MT25QL512ABB8ESF-0SIT TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Non-Volatile FLASH FLASH - NOR 512Mb (64M x 8) SPI 133 MHz 8ms, 2.8ms - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT48H32M16LFB4-6 IT:C

MT48H32M16LFB4-6 IT:C

IC DRAM 512MBIT PARALLEL 54VFBGA

Micron Technology Inc.
3,914 -

RFQ

MT48H32M16LFB4-6 IT:C

Ficha técnica

Bulk - Active Volatile DRAM SDRAM - Mobile LPSDR 512Mb (32M x 16) Parallel 166 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT48H16M32LFB5-6 IT:C

MT48H16M32LFB5-6 IT:C

IC DRAM 512MBIT PARALLEL 90VFBGA

Micron Technology Inc.
3,729 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPSDR 512Mb (16M x 32) Parallel 166 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT41K512M8DA-107 AIT:P TR

MT41K512M8DA-107 AIT:P TR

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,900 -

RFQ

MT41K512M8DA-107 AIT:P TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K256M8DA-125:K

MT41K256M8DA-125:K

IC DRAM 2GBIT PARALLEL 78FBGA

Micron Technology Inc.
3,708 -

RFQ

MT41K256M8DA-125:K

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 2Gb (256M x 8) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K256M16TW-107 AAT:P TR

MT41K256M16TW-107 AAT:P TR

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,350 -

RFQ

MT41K256M16TW-107 AAT:P TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 105°C (TC) Surface Mount
MT46H64M16LFBF-5 IT:B

MT46H64M16LFBF-5 IT:B

IC DRAM 1GBIT PARALLEL 60VFBGA

Micron Technology Inc.
213 -

RFQ

MT46H64M16LFBF-5 IT:B

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR 1Gb (64M x 16) Parallel 200 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT25QL512ABB8ESF-0AAT TR

MT25QL512ABB8ESF-0AAT TR

IC FLASH 512MBIT SPI 133MHZ 16SO

Micron Technology Inc.
3,671 -

RFQ

MT25QL512ABB8ESF-0AAT TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NOR 512Mb (64M x 8) SPI 133 MHz 8ms, 2.8ms - 2.7V ~ 3.6V -40°C ~ 105°C (TA) Surface Mount
MT41K256M16TW-107:P

MT41K256M16TW-107:P

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,353 -

RFQ

MT41K256M16TW-107:P

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT41K512M8DA-107:P

MT41K512M8DA-107:P

IC DRAM 4GBIT PARALLEL 78FBGA

Micron Technology Inc.
2,473 -

RFQ

MT41K512M8DA-107:P

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
MT48LC4M32B2B5-6A XIT:L TR

MT48LC4M32B2B5-6A XIT:L TR

IC DRAM 128MBIT PARALLEL 90VFBGA

Micron Technology Inc.
331 -

RFQ

MT48LC4M32B2B5-6A XIT:L TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Volatile DRAM SDRAM 128Mb (4M x 32) Parallel 167 MHz 12ns 5.4 ns 3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT46H64M32LFBQ-48 WT:C TR

MT46H64M32LFBQ-48 WT:C TR

IC DRAM 2GBIT PARALLEL 90VFBGA

Micron Technology Inc.
3,305 -

RFQ

MT46H64M32LFBQ-48 WT:C TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Last Time Buy Volatile DRAM SDRAM - Mobile LPDDR 2Gb (64M x 32) Parallel 208 MHz 14.4ns 5 ns 1.7V ~ 1.95V -25°C ~ 85°C (TA) Surface Mount
MT53E128M32D2DS-053 WT:A

MT53E128M32D2DS-053 WT:A

IC DRAM 4GBIT 1.866GHZ 200WFBGA

Micron Technology Inc.
624 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 4Gb (128M x 32) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT41K128M16JT-125 AIT:K

MT41K128M16JT-125 AIT:K

IC DRAM 2GBIT PARALLEL 96FBGA

Micron Technology Inc.
3,613 -

RFQ

MT41K128M16JT-125 AIT:K

Ficha técnica

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 2Gb (128M x 16) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
MT41K128M16JT-125 XIT:K

MT41K128M16JT-125 XIT:K

IC DRAM 2GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,478 -

RFQ

MT41K128M16JT-125 XIT:K

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 2Gb (128M x 16) Parallel 800 MHz - 13.75 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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