Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29F2T08CUHBBM4-3R:B TR

MT29F2T08CUHBBM4-3R:B TR

IC FLASH 2TB PARALLEL 333MHZ

Micron Technology Inc.
2,885 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 2Tb (256G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F2T08CUHBBM4-3R:B

MT29F2T08CUHBBM4-3R:B

IC FLASH 2TB PARALLEL 333MHZ

Micron Technology Inc.
3,739 -

RFQ

Bulk - Not For New Designs Non-Volatile FLASH FLASH - NAND 2Tb (256G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E2T08CUHBBM4-3:B TR

MT29E2T08CUHBBM4-3:B TR

IC FLASH 2TB PARALLEL 333MHZ

Micron Technology Inc.
2,898 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 2Tb (256G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E2T08CUHBBM4-3:B

MT29E2T08CUHBBM4-3:B

IC FLASH 2TB PARALLEL 333MHZ

Micron Technology Inc.
3,660 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 2Tb (256G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E3T08EUHBBM4-3:B TR

MT29E3T08EUHBBM4-3:B TR

IC FLASH 3TB PARALLEL 333MHZ

Micron Technology Inc.
3,707 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 3Tb (384G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E3T08EUHBBM4-3:B

MT29E3T08EUHBBM4-3:B

IC FLASH 3TB PARALLEL 333MHZ

Micron Technology Inc.
2,926 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 3Tb (384G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F4T08CTHBBM5-3R:B TR

MT29F4T08CTHBBM5-3R:B TR

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
2,925 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F4T08CTHBBM5-3R:B

MT29F4T08CTHBBM5-3R:B

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
3,071 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E4T08CTHBBM5-3:B TR

MT29E4T08CTHBBM5-3:B TR

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
2,158 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E4T08CTHBBM5-3:B

MT29E4T08CTHBBM5-3:B

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
3,465 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT43A4G40200NFA-S15:A

MT43A4G40200NFA-S15:A

HMC 16G NANA HBBGA QDP

Micron Technology Inc.
2,069 -

RFQ

Bulk - Active - - - - - - - - - - -
MT58L128L32F1T-8.5

MT58L128L32F1T-8.5

IC SRAM 4MBIT PARALLEL 100TQFP

Micron Technology Inc.
2,088 -

RFQ

MT58L128L32F1T-8.5

Ficha técnica

Bulk SYNCBURST™ Active Volatile SRAM SRAM 4Mb (128K x 32) Parallel 100 MHz - 8.5 ns 3.135V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT55L256L36FT-11

MT55L256L36FT-11

IC SRAM 8MBIT PARALLEL 100TQFP

Micron Technology Inc.
3,727 -

RFQ

MT55L256L36FT-11

Ficha técnica

Bulk ZBT® Active Volatile SRAM SRAM - Synchronous, ZBT 8Mb (256K x 36) Parallel 90 MHz - 8.5 ns 3.135V ~ 3.465V 0°C ~ 70°C (TA) Surface Mount
MT54V1MH18EF-7.5

MT54V1MH18EF-7.5

QDR SRAM, 1MX18, 3NS PBGA165

Micron Technology Inc.
3,852 -

RFQ

MT54V1MH18EF-7.5

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT58L128L32D1F-6

MT58L128L32D1F-6

IC SRAM 4MBIT PARALLEL 165FBGA

Micron Technology Inc.
2,743 -

RFQ

MT58L128L32D1F-6

Ficha técnica

Bulk SYNCBURST™ Active Volatile SRAM SRAM 4Mb (128K x 32) Parallel 166 MHz - 3.5 ns 3.135V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT55L512L18FF-11

MT55L512L18FF-11

IC SRAM 8MBIT PARALLEL 165FBGA

Micron Technology Inc.
2,137 -

RFQ

MT55L512L18FF-11

Ficha técnica

Bulk ZBT® Active Volatile SRAM SRAM - Synchronous, ZBT 8Mb (512K x 18) Parallel 90 MHz - 8.5 ns 3.135V ~ 3.465V 0°C ~ 70°C (TA) Surface Mount
MT58L1MY18FT-6.8

MT58L1MY18FT-6.8

CACHE SRAM, 1MX18, 6.8NS, CMOS

Micron Technology Inc.
2,865 -

RFQ

MT58L1MY18FT-6.8

Ficha técnica

Bulk * Active - - - - - - - - - - -
MT28EW128ABA1LPC-0SIT

MT28EW128ABA1LPC-0SIT

IC FLASH 128MBIT PARALLEL 64LBGA

Micron Technology Inc.
3,099 -

RFQ

MT28EW128ABA1LPC-0SIT

Ficha técnica

Tray - Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8, 8M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT28EW256ABA1HPC-0SIT

MT28EW256ABA1HPC-0SIT

IC FLASH 256MBIT PARALLEL 64LBGA

Micron Technology Inc.
3,307 -

RFQ

MT28EW256ABA1HPC-0SIT

Ficha técnica

Tray - Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8, 16M x 16) Parallel - 60ns 75 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT28EW256ABA1LPC-0SIT

MT28EW256ABA1LPC-0SIT

IC FLASH 256MBIT PARALLEL 64LBGA

Micron Technology Inc.
3,293 -

RFQ

MT28EW256ABA1LPC-0SIT

Ficha técnica

Tray - Active Non-Volatile FLASH FLASH - NOR 256Mb (32M x 8, 16M x 16) Parallel - 60ns 75 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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