Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29F4G08ABADAH4-AITX:D

MT29F4G08ABADAH4-AITX:D

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.
3,760 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND 4Gb (512M x 8) Parallel - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F4G08ABBDAH4-AITX:D TR

MT29F4G08ABBDAH4-AITX:D TR

IC FLASH 4GBIT PARALLEL 63VFBGA

Micron Technology Inc.
3,481 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active Non-Volatile FLASH FLASH - NAND 4Gb (512M x 8) Parallel - - - 1.7V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
MT29F2G01ABBGD12-AATES:G

MT29F2G01ABBGD12-AATES:G

IC FLASH 2GBIT SPI 83MHZ 24TPBGA

Micron Technology Inc.
2,743 -

RFQ

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND (SLC) 2Gb (2G x 1) SPI 83 MHz - - 1.7V ~ 1.95V -40°C ~ 105°C (TA) Surface Mount
MT25QL128ABB8E12-CAUT

MT25QL128ABB8E12-CAUT

128MB 3V BGA AUT AUTHENTA

Micron Technology Inc.
2,760 -

RFQ

MT25QL128ABB8E12-CAUT

Ficha técnica

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8) SPI - Quad I/O 133 MHz 1.8ms 5 ns 2.7V ~ 3.6V -40°C ~ 125°C (TA) Surface Mount
MT41K128M16V89C3WC1

MT41K128M16V89C3WC1

DDR3 2G DIE 128MX16

Micron Technology Inc.
3,606 -

RFQ

Bulk - Active Volatile DRAM SDRAM - DDR3L 2Gb (128M x 16) Parallel - - - 1.283V ~ 1.45V 0°C ~ 95°C (TC) -
MT46V64M8CY-5B:J TR

MT46V64M8CY-5B:J TR

IC DRAM 512MBIT PARALLEL 60FBGA

Micron Technology Inc.
3,368 -

RFQ

MT46V64M8CY-5B:J TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR 512Mb (64M x 8) Parallel 200 MHz 15ns 700 ps 2.5V ~ 2.7V 0°C ~ 70°C (TA) Surface Mount
MT29F64G08CBCGBL04A3WC1-M

MT29F64G08CBCGBL04A3WC1-M

IC FLASH 64GBIT PARALLEL WAFER

Micron Technology Inc.
2,673 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND 64Gb (8G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F1G16ABBFAH4-AATES:F

MT29F1G16ABBFAH4-AATES:F

IC FLASH 1GBIT PARALLEL 63VFBGA

Micron Technology Inc.
2,350 -

RFQ

Bulk Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND 1Gb (64M x 16) Parallel - - - 1.7V ~ 1.95V -40°C ~ 105°C (TA) Surface Mount
MT29F1G08ABAFAH4-AATES:F

MT29F1G08ABAFAH4-AATES:F

IC FLASH 1GBIT PARALLEL 63VFBGA

Micron Technology Inc.
3,129 -

RFQ

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND (SLC) 1Gb (128M x 8) Parallel - 20ns - 2.7V ~ 3.6V -40°C ~ 105°C (TA) Surface Mount
MT29F1G08ABAFAWP-AATES:F

MT29F1G08ABAFAWP-AATES:F

IC FLASH 1GBIT PARALLEL 48TSOP I

Micron Technology Inc.
2,594 -

RFQ

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND (SLC) 1Gb (128M x 8) Parallel - 20ns - 2.7V ~ 3.6V -40°C ~ 105°C (TA) Surface Mount
MT29F1G08ABBFAH4-AATES:F

MT29F1G08ABBFAH4-AATES:F

IC FLASH 1GBIT PARALLEL 63VFBGA

Micron Technology Inc.
3,584 -

RFQ

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND (SLC) 1Gb (128M x 8) Parallel - 30ns - 1.7V ~ 1.95V -40°C ~ 105°C (TA) Surface Mount
MT29F32G08CBACAL73A3WC1L

MT29F32G08CBACAL73A3WC1L

IC FLASH 32GBIT PARALLEL WAFER

Micron Technology Inc.
3,972 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND (MLC) 32Gb (4G x 8) Parallel - 20ns 20 ns 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F128G08EBCDBB05A3WC1

MT29F128G08EBCDBB05A3WC1

TLC 128G DIE 16GX8

Micron Technology Inc.
3,705 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT46H16M32LFBQ-5 AAT:C

MT46H16M32LFBQ-5 AAT:C

IC DRAM 512MBIT PARALLEL 90VFBGA

Micron Technology Inc.
2,941 -

RFQ

MT46H16M32LFBQ-5 AAT:C

Ficha técnica

Bulk - Active Volatile DRAM SDRAM - Mobile LPDDR 512Mb (16M x 32) Parallel 200 MHz 15ns 5 ns 1.7V ~ 1.95V -40°C ~ 105°C (TA) Surface Mount
MT28EW128ABA1HJS-0SIT TR

MT28EW128ABA1HJS-0SIT TR

IC FLASH 128MBIT PARALLEL 56TSOP

Micron Technology Inc.
2,847 -

RFQ

MT28EW128ABA1HJS-0SIT TR

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8, 8M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT28EW128ABA1LJS-0SIT TR

MT28EW128ABA1LJS-0SIT TR

IC FLASH 128MBIT PARALLEL 56TSOP

Micron Technology Inc.
3,584 -

RFQ

MT28EW128ABA1LJS-0SIT TR

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8, 8M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT46V64M8CY-5B:J

MT46V64M8CY-5B:J

IC DRAM 512MBIT PARALLEL 60FBGA

Micron Technology Inc.
2,071 -

RFQ

MT46V64M8CY-5B:J

Ficha técnica

Bulk - Active Volatile DRAM SDRAM - DDR 512Mb (64M x 8) Parallel 200 MHz 15ns 700 ps 2.5V ~ 2.7V 0°C ~ 70°C (TA) Surface Mount
MT28EW128ABA1HPC-0SIT TR

MT28EW128ABA1HPC-0SIT TR

IC FLASH 128MBIT PARALLEL 64LBGA

Micron Technology Inc.
3,823 -

RFQ

MT28EW128ABA1HPC-0SIT TR

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NOR 128Mb (16M x 8, 8M x 16) Parallel - 60ns 95 ns 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT41K64M16TW-107 AUT:J TR

MT41K64M16TW-107 AUT:J TR

IC DRAM 1GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,719 -

RFQ

MT41K64M16TW-107 AUT:J TR

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - DDR3L 1Gb (64M x 16) Parallel 933 MHz - 20 ns 1.283V ~ 1.45V -40°C ~ 125°C (TC) Surface Mount
MT53E128M16D1DS-046 AAT:A TR

MT53E128M16D1DS-046 AAT:A TR

IC DRAM LPDDR4 WFBGA

Micron Technology Inc.
2,636 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 2Gb (128M x 16) - 2.133 GHz - - 1.1V -40°C ~ 105°C (TC) -
Total 7314 Record«Prev1... 2526272829303132...366Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario