Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
W25Q80BWSVIG

W25Q80BWSVIG

IC FLASH 8MBIT SPI 80MHZ 8VSOP

Winbond Electronics
2,204 -

RFQ

W25Q80BWSVIG

Ficha técnica

Tube SpiFlash® Obsolete Non-Volatile FLASH FLASH - NOR 8Mb (1M x 8) SPI - Quad I/O 80 MHz 800µs - 1.65V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W25X20CLSVIG

W25X20CLSVIG

IC FLASH 2MBIT SPI 104MHZ 8VSOP

Winbond Electronics
2,471 -

RFQ

W25X20CLSVIG

Ficha técnica

Tube SpiFlash® Active Non-Volatile FLASH FLASH 2Mb (256K x 8) SPI 104 MHz 800µs - 2.3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
W25X40CLSVIG

W25X40CLSVIG

IC FLASH 4MBIT SPI 104MHZ 8VSOP

Winbond Electronics
3,742 -

RFQ

W25X40CLSVIG

Ficha técnica

Tube SpiFlash® Active Non-Volatile FLASH FLASH 4Mb (512K x 8) SPI 104 MHz 800µs - 2.3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
W978H2KBQX2E

W978H2KBQX2E

IC DRAM 256MBIT PAR 168WFBGA

Winbond Electronics
3,297 -

RFQ

W978H2KBQX2E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 256Mb (8M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W978H2KBQX2I

W978H2KBQX2I

IC DRAM 256MBIT PAR 168WFBGA

Winbond Electronics
3,258 -

RFQ

W978H2KBQX2I

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 256Mb (8M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W978H6KBQX2E

W978H6KBQX2E

IC DRAM 256MBIT PAR 168WFBGA

Winbond Electronics
2,399 -

RFQ

W978H6KBQX2E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 256Mb (16M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W978H6KBQX2I

W978H6KBQX2I

IC DRAM 256MBIT PAR 168WFBGA

Winbond Electronics
2,220 -

RFQ

W978H6KBQX2I

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 256Mb (16M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W979H2KBQX2E

W979H2KBQX2E

IC DRAM 512M PARALLEL 168WFBGA

Winbond Electronics
3,904 -

RFQ

W979H2KBQX2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W979H2KBQX2I

W979H2KBQX2I

IC DRAM 512M PARALLEL 168WFBGA

Winbond Electronics
2,859 -

RFQ

W979H2KBQX2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (16M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W979H6KBQX2E

W979H6KBQX2E

IC DRAM 512M PARALLEL 168WFBGA

Winbond Electronics
2,582 -

RFQ

W979H6KBQX2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (32M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W979H6KBQX2I

W979H6KBQX2I

IC DRAM 512M PARALLEL 168WFBGA

Winbond Electronics
2,336 -

RFQ

W979H6KBQX2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 512Mb (32M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W97AH2KBQX2E

W97AH2KBQX2E

IC DRAM 1G PARALLEL 168WFBGA

Winbond Electronics
3,933 -

RFQ

W97AH2KBQX2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (32M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W97AH2KBQX2I

W97AH2KBQX2I

IC DRAM 1G PARALLEL 168WFBGA

Winbond Electronics
2,656 -

RFQ

W97AH2KBQX2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (32M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W97AH2KBVX2E

W97AH2KBVX2E

IC DRAM 1GBIT PARALLEL 134VFBGA

Winbond Electronics
3,481 -

RFQ

W97AH2KBVX2E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (32M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W97AH2KBVX2I

W97AH2KBVX2I

IC DRAM 1GBIT PARALLEL 134VFBGA

Winbond Electronics
3,439 -

RFQ

W97AH2KBVX2I

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (32M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W97AH6KBQX2E

W97AH6KBQX2E

IC DRAM 1G PARALLEL 168WFBGA

Winbond Electronics
2,751 -

RFQ

W97AH6KBQX2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (64M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W97AH6KBQX2I

W97AH6KBQX2I

IC DRAM 1G PARALLEL 168WFBGA

Winbond Electronics
3,437 -

RFQ

W97AH6KBQX2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2 1Gb (64M x 16) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W97BH2KBQX2E

W97BH2KBQX2E

IC DRAM 2GBIT PARALLEL 168WFBGA

Winbond Electronics
2,931 -

RFQ

W97BH2KBQX2E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 2Gb (64M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W97BH2KBQX2I

W97BH2KBQX2I

IC DRAM 2GBIT PARALLEL 168WFBGA

Winbond Electronics
2,344 -

RFQ

W97BH2KBQX2I

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 2Gb (64M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -40°C ~ 85°C (TA) Surface Mount
W97BH2KBVX2E

W97BH2KBVX2E

IC DRAM 2GBIT PARALLEL 134VFBGA

Winbond Electronics
2,929 -

RFQ

W97BH2KBVX2E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - Mobile LPDDR2 2Gb (64M x 32) Parallel 400 MHz 15ns - 1.14V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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