Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
W958D6DBCX7I TR

W958D6DBCX7I TR

IC PSRAM 256MBIT PAR 54VFBGA

Winbond Electronics
2,066 -

RFQ

W958D6DBCX7I TR

Ficha técnica

Tape & Reel (TR) - Not For New Designs Volatile PSRAM PSRAM (Pseudo SRAM) 256Mb (16M x 16) Parallel 133 MHz - 70 ns 1.7V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
W968D6DAGX7I TR

W968D6DAGX7I TR

IC PSRAM 256MBIT PAR 54VFBGA

Winbond Electronics
3,381 -

RFQ

W968D6DAGX7I TR

Ficha técnica

Tape & Reel (TR) - Not For New Designs Volatile PSRAM PSRAM (Pseudo SRAM) 256Mb (16M x 16) Parallel 133 MHz - 70 ns 1.7V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
W9812G2KB-6

W9812G2KB-6

IC DRAM 128MBIT PARALLEL 90TFBGA

Winbond Electronics
3,848 -

RFQ

W9812G2KB-6

Ficha técnica

Tray - Active Volatile DRAM SDRAM 128Mb (4M x 32) Parallel 166 MHz - 5 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
W9812G2KB-6I

W9812G2KB-6I

IC DRAM 128MBIT PARALLEL 90TFBGA

Winbond Electronics
2,672 -

RFQ

W9812G2KB-6I

Ficha técnica

Tray - Active Volatile DRAM SDRAM 128Mb (4M x 32) Parallel 166 MHz - 5 ns 3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
W97BH6MBVA2I

W97BH6MBVA2I

2GB LPDDR2, X16, 400MHZ, -40 ~ 8

Winbond Electronics
2,400 -

RFQ

W97BH6MBVA2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2-S4B 2Gb (128M x 16) HSUL_12 400 MHz 15ns - 1.14V ~ 1.3V, 1.7V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
W97BH2MBVA2I

W97BH2MBVA2I

2GB LPDDR2, X32, 400MHZ, -40 ~ 8

Winbond Electronics
2,160 -

RFQ

W97BH2MBVA2I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2-S4B 2Gb (64M x 32) HSUL_12 400 MHz 15ns - 1.14V ~ 1.3V, 1.7V ~ 1.95V -40°C ~ 85°C (TC) Surface Mount
W97BH6MBVA2E

W97BH6MBVA2E

2GB LPDDR2, X16, 400MHZ, -25 ~ 8

Winbond Electronics
3,602 -

RFQ

W97BH6MBVA2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2-S4B 2Gb (128M x 16) HSUL_12 400 MHz 15ns - 1.14V ~ 1.3V, 1.7V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W97BH2MBVA2E

W97BH2MBVA2E

2GB LPDDR2, X32, 400MHZ, -25 ~ 8

Winbond Electronics
3,529 -

RFQ

W97BH2MBVA2E

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR2-S4B 2Gb (64M x 32) HSUL_12 400 MHz 15ns - 1.14V ~ 1.3V, 1.7V ~ 1.95V -25°C ~ 85°C (TC) Surface Mount
W66BP6NBUAGJ

W66BP6NBUAGJ

2GB LPDDR4, X16, 1866MHZ, -40C~1

Winbond Electronics
2,841 -

RFQ

W66BP6NBUAGJ

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 2Gb (128M x 16) LVSTL_11 1.866 GHz 18ns 3.5 ns 1.06V ~ 1.17V, 1.7V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
W66BQ6NBUAGJ

W66BQ6NBUAGJ

2GB LPDDR4X, X16, 1866MHZ, -40C~

Winbond Electronics
3,617 -

RFQ

W66BQ6NBUAGJ

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4X 2Gb (128M x 16) LVSTL_11 1.866 GHz 18ns 3.5 ns 1.06V ~ 1.17V, 1.7V ~ 1.95V -40°C ~ 105°C (TC) Surface Mount
W632GG8NB12I

W632GG8NB12I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
2,059 -

RFQ

W632GG8NB12I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3 2Gb (256M x 8) Parallel 800 MHz 15ns 20 ns 1.425V ~ 1.575V -40°C ~ 95°C (TC) Surface Mount
W632GG8NB15I

W632GG8NB15I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
3,529 -

RFQ

W632GG8NB15I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3 2Gb (256M x 8) Parallel 667 MHz 15ns 20 ns 1.425V ~ 1.575V -40°C ~ 95°C (TC) Surface Mount
W632GU8NB12I

W632GU8NB12I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
3,472 -

RFQ

W632GU8NB12I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 2Gb (256M x 8) Parallel 800 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
W632GU8NB15I

W632GU8NB15I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
2,770 -

RFQ

W632GU8NB15I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 2Gb (256M x 8) Parallel 667 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
W25M512JVEIQ

W25M512JVEIQ

IC FLSH 512MBIT SPI 104MHZ 8WSON

Winbond Electronics
3,434 -

RFQ

W25M512JVEIQ

Ficha técnica

Tube SpiFlash® Active Non-Volatile FLASH FLASH - NOR 512Mb (64M x 8) SPI 104 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
W632GG8NB11I

W632GG8NB11I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
3,871 -

RFQ

W632GG8NB11I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3 2Gb (256M x 8) Parallel 933 MHz 15ns 20 ns 1.425V ~ 1.575V -40°C ~ 95°C (TC) Surface Mount
W632GU8NB11I

W632GU8NB11I

IC DRAM 2GBIT PARALLEL 78VFBGA

Winbond Electronics
2,353 -

RFQ

W632GU8NB11I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3L 2Gb (256M x 8) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V -40°C ~ 95°C (TC) Surface Mount
W634GU6QB-11 TR

W634GU6QB-11 TR

4GB DDR3L 1.35V SDRAM, X16, 933M

Winbond Electronics
3,982 -

RFQ

W634GU6QB-11 TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR3L 4Gb (256M x 16) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
W634GU8QB-11 TR

W634GU8QB-11 TR

4GB DDR3L 1.35V SDRAM, X8, 933MH

Winbond Electronics
2,111 -

RFQ

W634GU8QB-11 TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM SDRAM - DDR3L 4Gb (512M x 8) Parallel 933 MHz 15ns 20 ns 1.283V ~ 1.45V 0°C ~ 95°C (TC) Surface Mount
W632GG6NB12I

W632GG6NB12I

IC DRAM 2GBIT PARALLEL 96VFBGA

Winbond Electronics
2,704 -

RFQ

W632GG6NB12I

Ficha técnica

Tray - Active Volatile DRAM SDRAM - DDR3 2Gb (128M x 16) Parallel 800 MHz 15ns 20 ns 1.425V ~ 1.575V -40°C ~ 95°C (TC) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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