Memoria

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MR48V256ATAZBARL

MR48V256ATAZBARL

IC FRAM 256KBIT PAR 28TSOP I

Rohm Semiconductor
405 -

RFQ

MR48V256ATAZBARL

Ficha técnica

Tray - Active Non-Volatile FRAM FRAM (Ferroelectric RAM) 256Kb (32K x 8) Parallel - 150ns 70 ns 3V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MR45V200BRAZAARL

MR45V200BRAZAARL

IC FRAM 2MBIT SPI 34MHZ 8DIP

Rohm Semiconductor
476 -

RFQ

MR45V200BRAZAARL

Ficha técnica

Tube - Obsolete Non-Volatile FRAM FRAM (Ferroelectric RAM) 2Mb (256K x 8) SPI 34 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Through Hole
BR93C86-WDW6TP

BR93C86-WDW6TP

IC EEPROM 16KBIT SPI 2MHZ 8TSSOP

Rohm Semiconductor
2,028 -

RFQ

BR93C86-WDW6TP

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile EEPROM EEPROM 16Kb (2K x 8) SPI 2 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR93C86-WDS6TP

BR93C86-WDS6TP

IC EEPROM 16KBIT SPI 2MHZ 8TSSOP

Rohm Semiconductor
3,468 -

RFQ

BR93C86-WDS6TP

Ficha técnica

Tape & Reel (TR) - Obsolete Non-Volatile EEPROM EEPROM 16Kb (2K x 8) SPI 2 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR93C76-WMN6TP

BR93C76-WMN6TP

IC EEPROM 8KBIT SPI 2MHZ 8SO

Rohm Semiconductor
3,255 -

RFQ

BR93C76-WMN6TP

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile EEPROM EEPROM 8Kb (1K x 8) SPI 2 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR93C76-WDW6TP

BR93C76-WDW6TP

IC EEPROM 8KBIT SPI 2MHZ 8TSSOP

Rohm Semiconductor
3,871 -

RFQ

BR93C76-WDW6TP

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile EEPROM EEPROM 8Kb (1K x 8) SPI 2 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR93C76-WDS6TP

BR93C76-WDS6TP

IC EEPROM 8KBIT SPI 2MHZ 8TSSOP

Rohm Semiconductor
3,589 -

RFQ

BR93C76-WDS6TP

Ficha técnica

Tape & Reel (TR) - Obsolete Non-Volatile EEPROM EEPROM 8Kb (1K x 8) SPI 2 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR95160-WDW6TP

BR95160-WDW6TP

IC EEPROM 16KBIT SPI 5MHZ 8TSSOP

Rohm Semiconductor
2,334 -

RFQ

BR95160-WDW6TP

Ficha técnica

Tape & Reel (TR) - Obsolete Non-Volatile EEPROM EEPROM 16Kb (2K x 8) SPI 5 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR95020-WDW6TP

BR95020-WDW6TP

IC EEPROM 2KBIT SPI 5MHZ 8TSSOP

Rohm Semiconductor
2,902 -

RFQ

BR95020-WDW6TP

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile EEPROM EEPROM 2Kb (256 x 8) SPI 5 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR95040-WDS6TP

BR95040-WDS6TP

IC EEPROM 4KBIT SPI 5MHZ 8TSSOP

Rohm Semiconductor
3,508 -

RFQ

BR95040-WDS6TP

Ficha técnica

Tape & Reel (TR) - Obsolete Non-Volatile EEPROM EEPROM 4Kb (512 x 8) SPI 5 MHz 5ms - 2.5V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR95080-RMN6TP

BR95080-RMN6TP

IC EEPROM 8KBIT SPI 2MHZ 8SO

Rohm Semiconductor
2,835 -

RFQ

BR95080-RMN6TP

Ficha técnica

Tape & Reel (TR) - Obsolete Non-Volatile EEPROM EEPROM 8Kb (1K x 8) SPI 2 MHz 10ms - 1.8V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
BR93L66RFVJ-WE2

BR93L66RFVJ-WE2

IC EEPROM 4KBIT SPI 2MHZ 8TSSOP

Rohm Semiconductor
2,801 -

RFQ

BR93L66RFVJ-WE2

Ficha técnica

Tape & Reel (TR) - Active Non-Volatile EEPROM EEPROM 4Kb (256 x 16) SPI 2 MHz 5ms - 1.8V ~ 5.5V -40°C ~ 85°C (TA) Surface Mount
MSM5117400F-60J3-7

MSM5117400F-60J3-7

IC DRAM 16MBIT PARALLEL 26SOJ

Rohm Semiconductor
2,946 -

RFQ

MSM5117400F-60J3-7

Ficha técnica

Tube - Obsolete Volatile DRAM DRAM 16Mb (4M x 4) Parallel - 110ns 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) -
MSM5117400F-60T3-K-7

MSM5117400F-60T3-K-7

IC DRAM 16MBIT PARALLEL KBU

Rohm Semiconductor
3,499 -

RFQ

MSM5117400F-60T3-K-7

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 16Mb (4M x 4) Parallel - 110ns 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
MSM5117405F-60J3-7

MSM5117405F-60J3-7

IC DRAM 16MBIT PARALLEL 26SOJ

Rohm Semiconductor
2,654 -

RFQ

Tube - Obsolete Volatile DRAM DRAM 16Mb (4M x 4) Parallel - - 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) -
MSM5118160F-60J3-7

MSM5118160F-60J3-7

IC DRAM 16MBIT PARALLEL 26SOJ

Rohm Semiconductor
2,777 -

RFQ

Tube - Obsolete Volatile DRAM DRAM 16Mb (1M x 16) Parallel - - 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) -
MSM5118160F-60T3K-MT

MSM5118160F-60T3K-MT

IC DRAM 16MBIT PARALLEL 50TSOP

Rohm Semiconductor
3,919 -

RFQ

Tray - Obsolete Volatile DRAM DRAM 16Mb (1M x 16) Parallel - - 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) -
MSM5118165F-60J3-7

MSM5118165F-60J3-7

IC DRAM 16MBIT PARALLEL 42SOJ

Rohm Semiconductor
3,267 -

RFQ

Tube - Obsolete Volatile DRAM DRAM 16Mb (1M x 16) Parallel - - 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
MSM5118165F-60T3K-MT

MSM5118165F-60T3K-MT

IC DRAM 16MBIT PAR 50TSOP II

Rohm Semiconductor
2,575 -

RFQ

Tray - Active Volatile DRAM DRAM 16Mb (1M x 16) Parallel - - 30 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Surface Mount
MSM51V17400F-60TDKX

MSM51V17400F-60TDKX

IC DRAM 16MBIT PARALLEL 26TSOP

Rohm Semiconductor
3,076 -

RFQ

MSM51V17400F-60TDKX

Ficha técnica

Tray - Active Volatile DRAM DRAM 16Mb (4M x 4) Parallel - 110ns 30 ns 3V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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