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Diodos - Zener - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Tolerance | Part Status | Power - Max | Mounting Type | Package / Case | Impedance (Max) (Zzt) | Operating Temperature | Supplier Device Package | Voltage - Zener (Nom) (Vz) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PZ1AH3V9B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
2,745 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 8 Ohms | -55°C ~ 150°C (TJ) | 3.9 V | 50 µA @ 1 V | - | ||||
|
BZT52C56-G3-18DIODE ZENER 56V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
3,395 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 135 Ohms | -55°C ~ 150°C | 56 V | - | - | ||
|
|
PZ1AH30B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
2,741 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 15 Ohms | -55°C ~ 150°C (TJ) | 30 V | 1 µA @ 22 V | - | ||||
|
|
BZT52C5V1-G3-18DIODE ZENER 5.1V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
3,518 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 30 Ohms | -55°C ~ 150°C | 5.1 V | 100 nA @ 800 mV | - | ||
|
|
PZ1AH25B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
3,368 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 15 Ohms | -55°C ~ 150°C (TJ) | 25 V | 1 µA @ 19 V | - | ||||
|
|
BZT52C5V6-G3-18DIODE ZENER 5.6V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
2,285 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 10 Ohms | -55°C ~ 150°C | 5.6 V | 100 nA @ 1 V | - | ||
|
|
PZ1AL11B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
3,323 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 7 Ohms | -55°C ~ 150°C (TJ) | 11 V | 4 µA @ 8.2 V | - | ||||
|
|
BZT52C62-G3-18DIODE ZENER 62V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
3,760 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 150 Ohms | -55°C ~ 150°C | 62 V | - | - | ||
|
|
PZ1AH33B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
2,829 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 15 Ohms | -55°C ~ 150°C (TJ) | 33 V | 1 µA @ 24 V | - | ||||
|
|
BZT52C68-G3-18DIODE ZENER 68V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
2,868 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 200 Ohms | -55°C ~ 150°C | 68 V | - | - | ||
|
|
PZ1AL10B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
3,850 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 4 Ohms | -55°C ~ 150°C (TJ) | 10 V | 7 µA @ 7.5 V | - | ||||
|
|
BZT52C6V2-G3-18DIODE ZENER 6.2V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
2,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 4.8 Ohms | -55°C ~ 150°C | 6.2 V | 100 nA @ 2 V | - | ||
|
|
2EZ8.7_R2_00001SILICON ZENER DIODE Panjit International Inc. |
3,691 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 2 W | Through Hole | 2 Ohms | -55°C ~ 150°C (TJ) | 8.7 V | 4 µA @ 6.6 V | - | ||||
|
|
BZT52C6V8-G3-18DIODE ZENER 6.8V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
2,510 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 4.5 Ohms | -55°C ~ 150°C | 6.8 V | 100 nA @ 3 V | - | ||
|
|
2EZ25_R2_00001SILICON ZENER DIODE Panjit International Inc. |
3,478 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 2 W | Through Hole | 14 Ohms | -55°C ~ 150°C (TJ) | 25 V | 500 nA @ 19 V | - | ||||
|
|
BZT52C75-G3-18DIODE ZENER 75V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
3,861 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 250 Ohms | -55°C ~ 150°C | 75 V | - | - | ||
|
|
PZ1AL8V7B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
2,869 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 3 Ohms | -55°C ~ 150°C (TJ) | 8.7 V | 10 µA @ 4 V | - | ||||
|
|
BZT52C7V5-G3-18DIODE ZENER 7.5V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
2,761 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 4 Ohms | -55°C ~ 150°C | 7.5 V | 100 nA @ 5 V | - | ||
|
|
PZ1AL56B_R1_00001SILICON ZENER DIODE Panjit International Inc. |
3,201 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | ±5% | Active | 1 W | Surface Mount | 60 Ohms | -55°C ~ 150°C (TJ) | 56 V | 1 µA @ 43 V | - | ||||
|
|
BZT52C8V2-G3-18DIODE ZENER 8.2V 410MW SOD123 Vishay General Semiconductor - Diodes Division |
3,719 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | BZT52-G | RoHS | ±5% | Active | 410 mW | Surface Mount | 4.5 Ohms | -55°C ~ 150°C | 8.2 V | 100 nA @ 6 V | - |
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