Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NRVTS1045EMFST3G

NRVTS1045EMFST3G

DIODE SCHOTTKY 45V 10A 5DFN

onsemi
2,708 -

RFQ

NRVTS1045EMFST3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 300pF @ 45V, 1MHz - 50 µA @ 45 V 45 V 10A -55°C ~ 150°C 600 mV @ 10 A
RD2006FR-H

RD2006FR-H

DIODE GEN PURP 600V 20A TO220F

onsemi
294 -

RFQ

RD2006FR-H

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 100 µA @ 600 V 600 V 20A 150°C (Max) 1.75 V @ 20 A
MUR240G

MUR240G

DIODE GEN PURP 400V 2A AXIAL

onsemi
1,003 -

RFQ

MUR240G

Ficha técnica

Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 65 ns 5 µA @ 400 V 400 V 2A -65°C ~ 175°C 1.3 V @ 2 A
RHRP15120-F102

RHRP15120-F102

DIODE GEN PURP 1.2KV 15A TO220-2

onsemi
602 -

RFQ

RHRP15120-F102

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 100 µA @ 1200 V 1200 V 15A -65°C ~ 175°C 3.2 V @ 15 A
NHPV08S600G

NHPV08S600G

DIODE GEN PURP 600V 8A TO220-2

onsemi
492 -

RFQ

NHPV08S600G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 8A -55°C ~ 150°C 3.2 V @ 8 A
RHRP860-F085

RHRP860-F085

DIODE GEN PURP 600V 8A TO220AC

onsemi
415 -

RFQ

RHRP860-F085

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 100 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.1 V @ 8 A
FFSP1065B

FFSP1065B

SIC DIODE TO220 650V

onsemi
3,167 -

RFQ

FFSP1065B

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 421pF @ 1V, 100kHz 0 ns 40 µA @ 650 V 650 V 11A (DC) -55°C ~ 175°C 1.7 V @ 10 A
FFSB1065A

FFSB1065A

DIODE SBD 10A 650V D2PAK-3

onsemi
2,572 -

RFQ

FFSB1065A

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 575pF @ 1V, 100kHz - 200 µA @ 650 V 650 V 14A (DC) -55°C ~ 175°C 1.75 V @ 10 A
ISL9R18120S3ST

ISL9R18120S3ST

DIODE GEN PURP 1200V 18A TO263AB

onsemi
455 -

RFQ

ISL9R18120S3ST

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 300 ns 100 µA @ 1200 V 1200 V 18A -55°C ~ 175°C 3.3 V @ 18 A
S3K

S3K

DIODE GEN PURP 800V 3A SMC

onsemi
2,891 -

RFQ

S3K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 2.5 µs 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.2 V @ 3 A
FFPF30UP20STU

FFPF30UP20STU

DIODE GEN PURP 200V 30A TO220F

onsemi
2,488 -

RFQ

FFPF30UP20STU

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 100 µA @ 200 V 200 V 30A -65°C ~ 150°C 1.15 V @ 30 A
NRVTS8H120EMFST1G

NRVTS8H120EMFST1G

DIODE SCHOTTKY 8DFN

onsemi
3,183 -

RFQ

NRVTS8H120EMFST1G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 120 V 120 V 8A -55°C ~ 175°C 765 mV @ 8 A
FFSM0665A

FFSM0665A

650V 6A SIC SBD

onsemi
2,934 -

RFQ

FFSM0665A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 365pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 8A (DC) -55°C ~ 175°C 1.75 V @ 6 A
NRVTS8H120EMFST3G

NRVTS8H120EMFST3G

DIODE SCHOTTKY 8DFN

onsemi
2,753 -

RFQ

NRVTS8H120EMFST3G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 120 V 120 V 8A -55°C ~ 175°C 765 mV @ 8 A
FFA40UP35STU

FFA40UP35STU

DIODE GEN PURP 350V 40A TO3PN

onsemi
2,863 -

RFQ

FFA40UP35STU

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 55 ns 100 µA @ 350 V 350 V 40A -65°C ~ 150°C 1.6 V @ 40 A
SB160

SB160

DIODE SCHOTTKY 60V 1A DO204AL

onsemi
1,537 -

RFQ

SB160

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole 110pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 1A -60°C ~ 125°C 700 mV @ 1 A
ISL9R30120G2

ISL9R30120G2

DIODE GEN PURP 1200V 30A TO247-2

onsemi
261 -

RFQ

ISL9R30120G2

Ficha técnica

Tube Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 100 ns 100 µA @ 1200 V 1200 V 30A -55°C ~ 150°C 3.3 V @ 30 A
NHP0620PFST3G

NHP0620PFST3G

DIODE ULT FAST 6A 200V TO277-3

onsemi
3,275 -

RFQ

Tape & Reel (TR) RoHS - - Active - - - - - - - -
RS1B

RS1B

DIODE GEN PURP 100V 1A SMA

onsemi
5,980 -

RFQ

RS1B

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
FFSB0665B-F085

FFSB0665B-F085

650V 6A SIC SBD GEN1.5

onsemi
718 -

RFQ

FFSB0665B-F085

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 259pF @ 1V, 100kHz 0 ns 40 µA @ 650 V 650 V 8A (DC) -55°C ~ 175°C 1.7 V @ 6 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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