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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSVBASH20LT1GDIODE SWITCHING 250V SOT-23-3 onsemi |
2,534 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 200 V | 200mA (DC) | -55°C ~ 175°C | 1.25 V @ 200 mA | |
|
SB02-09C-TB-EDIODE SCHOTTKY 90V 200MA 3CP onsemi |
3,444 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 10V, 1MHz | 10 ns | 50 µA @ 45 V | 90 V | 200mA | -55°C ~ 125°C | 700 mV @ 200 mA | |
|
NSVR0240P2T5GDIODE SCHOTTKY 40V 200MA SOD923 onsemi |
118,500 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | - | 5 µA @ 40 V | 40 V | 200mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA |
|
NRVUS120VT3GDIODE GEN PURP 200V 2A SMB onsemi |
3,285 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A |
|
|
NRVUS220VT3GDIODE GEN PURP 200V 2A SMB onsemi |
2,428 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
NSR0240V2T5GDIODE SCHOTTKY 40V 250MA SOD523 onsemi |
2,372 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4pF @ 5V, 1MHz | 3 ns | 10 µA @ 40 V | 40 V | 250mA (DC) | -55°C ~ 150°C | 700 mV @ 200 mA | |
|
|
SBAS16XV2T5GSS SWITCHING DIODE SOD523 onsemi |
2,573 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 100 V | 100 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 150 mA |
|
|
NSR05T404MX2T5GDIODE SCHOTTKY 40V 500MA X2DFN2 onsemi |
3,750 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 1V, 1MHz | 13 ns | 85 µA @ 40 V | 40 V | 500mA (DC) | -55°C ~ 150°C | 630 mV @ 500 mA | ||
|
FFSB0465A650V 4A SIC SBD onsemi |
3,808 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 258pF @ 1V, 100kHz | 0 ns | 200 mA @ 650 V | 650 V | 7.7A (DC) | -55°C ~ 175°C | 1.75 V @ 4 A | |
|
FFSH15120A1200V 15A SIC SBD onsemi |
3,029 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 936pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 26A (DC) | -55°C ~ 175°C | 1.75 V @ 15 A | |
|
|
FFSH30120A1200V 30A SIC SBD onsemi |
2,241 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1740pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 46A (DC) | -55°C ~ 175°C | - | |
|
RHRP3060-F102DIODE GEN PURP 600V 30A TO220-2 onsemi |
2,430 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 45 ns | 250 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.1 V @ 30 A | |
|
|
PCFFS40120AFDIODE SCHOTTKY 1200V 40A DIE onsemi |
2,896 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2250pf @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 61A (DC) | -55°C ~ 175°C | 1.75 V @ 40 A | ||
|
|
FFSH40120A1200V 40A SIC SBD onsemi |
2,833 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2250pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 61A (DC) | -55°C ~ 175°C | - | |
|
|
FFSB0665B650V 6A SIC SBD GEN1.5 onsemi |
3,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 259pF @ 1V, 100kHz | - | 40 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | |
|
|
PCFFS20120AFDIODE SCHOTTKY 20A 1200V DIE onsemi |
3,670 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.723 V @ 20 A | ||
|
BAS21M3T5GDIODE GEN PURP 250V 200MA SOT723 onsemi |
2,184 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
NSVBAS21M3T5GDIODE GEN PURP 250V 200MA SOT723 onsemi |
3,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA |
|
|
PCFFS50120AFDIODE SCHOTTKY 1200V 50A DIE onsemi |
3,731 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 50A | 175°C (Max) | 1.75 V @ 50 A | ||
|
|
NSVBAT54LT1GDIODE SCHOTTKY 30V 200MA SOT23-3 onsemi |
2,507 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 800 mV @ 100 mA |
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