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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAV103/S500,115DIODE SWITCHING SOD80C NXP USA Inc. |
3,160 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
BAT54/LF1RDIODE SCHOTTKY TO-236AB NXP USA Inc. |
2,482 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
BAT721C/ZLRDIODE SCHOTTKY TO-236AB NXP USA Inc. |
2,720 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
PMEG3010BEA/ZLFDIODE SCHOTTKY SOD323 NXP USA Inc. |
3,333 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
PMEG3010BEA/ZLXDIODE SCHOTTKY SOD323 NXP USA Inc. |
2,849 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
PMEG4030ER/BXDIODE SCHOTTKY 40V 3A SOD123W NXP USA Inc. |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BAS316/ZLFDIODE GEN PURP 100V 215MA SOD323 NXP USA Inc. |
2,880 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | ||
|
|
BAS321/ZLFDIODE GEN PURP 200V 250MA SOD323 NXP USA Inc. |
3,530 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | ||
|
|
BAS321/ZLXDIODE GEN PURP 200V 250MA SOD323 NXP USA Inc. |
3,142 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | ||
|
|
BAS316/ZLXDIODE GEN PURP 100V 215MA SOD323 NXP USA Inc. |
3,923 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 1pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | ||
|
BAS40/ZLVLDIODE SCHOTTKY 40V 120MA SOT23 NXP USA Inc. |
2,008 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 5pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 120mA (DC) | 150°C (Max) | 1 V @ 40 mA | ||
|
|
PMEG1201AESF/S50YLPMEG1201AESF/S50YL NXP USA Inc. |
2,271 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
PMEG1201AESFC/S5YLPMEG1201AESFC/S5YL NXP USA Inc. |
3,332 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
PMEG4030ER/DG/B2,1PMEG4030ER/DG/B2,1 NXP USA Inc. |
3,233 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
BAS216,115DIODE GEN PURP 75V 250MA SOD2 NXP USA Inc. |
2,196 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 75 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
BY229-600,127DIODE GEN PURP 500V 8A TO220AC NXP USA Inc. |
2,620 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 400 µA @ 500 V | 500 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
BY229X-200,127DIODE GEN PURP 150V 8A TO220F NXP USA Inc. |
2,512 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 400 µA @ 150 V | 150 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
|
BY229X-600,127DIODE GEN PURP 500V 8A TO220F NXP USA Inc. |
2,699 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 400 µA @ 500 V | 500 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
|
BY229X-800,127DIODE GEN PURP 600V 8A TO220F NXP USA Inc. |
3,961 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 400 µA @ 600 V | 600 V | 8A | 150°C (Max) | 1.85 V @ 20 A | |
|
1PS59SB10,115DIODE SCHOTTKY 30V 200MA SMT3 NXP USA Inc. |
3,706 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
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