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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-E4PH3006L-N3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	475	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	50 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2 V @ 30 A
S3M R7G DIODE GEN PURP 1KV 3A DO214AB Taiwan Semiconductor Corporation	1,530	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	-	10 µA @ 1000 V	1000 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
TST10L200CW C0G DIODE SCHOTTKY 200V 10A TO220AB Taiwan Semiconductor Corporation	901	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 200 V	200 V	10A	-55°C ~ 150°C	900 mV @ 10 A
S3G-E3/9AT DIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division	1,421	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	2.5 µs	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.15 V @ 2.5 A
1N4607 DIODE GEN PURP 85V 200MA DO35 Microchip Technology	401	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	10 ns	100 µA @ 50 V	85 V	200mA	-65°C ~ 200°C	1.1 V @ 400 mA
SB160 DIODE SCHOTTKY 60V 1A DO204AL onsemi	1,537	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 60 V	60 V	1A	-60°C ~ 125°C	700 mV @ 1 A
CMR3U-10M TR13 PBFREE DIODE GEN PURP 1000V 3A SMC Central Semiconductor Corp	791	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	5 µA @ 1000 V	1000 V	3A	-65°C ~ 175°C	2 V @ 3 A
CURN102-HF DIODE GEN PURP 400V 1A 1206 Comchip Technology	1,284	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	50 ns	-	400 V	1A	-65°C ~ 175°C	1.7 V @ 1 A
VS-EPU3006L-N3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	498	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	30 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2 V @ 30 A
SK215ATR DIODE SCHOTTKY 150V 2A SMA SMC Diode Solutions	971	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	240pF @ 5V, 1MHz	-	500 µA @ 150 V	150 V	2A	-55°C ~ 150°C	950 mV @ 2 A
VS-APH3006L-N3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	424	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	26 ns	30 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2.65 V @ 30 A
S3GTR DIODE GEN PURP 400V 3A SMC SMC Diode Solutions	1,065	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	3A	-65°C ~ 175°C	1.1 V @ 3 A
ISL9R30120G2 DIODE GEN PURP 1200V 30A TO247-2 onsemi	261	-	RFQ	Ficha técnica	Tube	Stealth™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	100 ns	100 µA @ 1200 V	1200 V	30A	-55°C ~ 150°C	3.3 V @ 30 A
RS1GLW RVG DIODE GEN PURP 400V 1A SOD123W Taiwan Semiconductor Corporation	1,040	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.3 V @ 1 A
GC02MPS12-220 SIC DIODE 1200V 2A TO-220-2 GeneSiC Semiconductor	137	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	127pF @ 1V, 1MHz	0 ns	2 µA @ 1200 V	1200 V	12A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
VSS8D3M15-M3/I 3A, 150V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division	13,988	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	190pF @ 4V, 1MHz	-	180 µA @ 150 V	150 V	1.9A	-40°C ~ 175°C	760 mV @ 1.5 A
UFS510JE3/TR13 DIODE GEN PURP 100V 5A DO214AB Microchip Technology	3,952	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	10 µA @ 100 V	100 V	5A	-55°C ~ 175°C	950 mV @ 5 A
DPF60IM400HB DIODE GEN PURP 400V 60A TO247AD IXYS	3,272	-	RFQ	Ficha técnica	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	1 µA @ 400 V	400 V	60A	-55°C ~ 175°C	1.27 V @ 60 A
VS-6F20 DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division	2,501	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	12 mA @ 200 V	200 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
JAN1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	2,692	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/228	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 300 V	200 V	1A	-65°C ~ 175°C	1.1 V @ 1 A