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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMEG40T20EPXDIODE SCHOTTKY 40V 2A CFP5 Nexperia USA Inc. |
2,241 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 355pF @ 1V, 1MHz | 11.5 ns | 22 µA @ 40 V | 40 V | 2A | 175°C (Max) | 445 mV @ 2 A |
|
SFF2005G C0GDIODE GEN PURP 300V 20A ITO220AB Taiwan Semiconductor Corporation |
960 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 20A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
PMEG3015EJ,115DIODE SCHOTTKY 30V 1.5A SOD323F Nexperia USA Inc. |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 72pF @ 1V, 1MHz | - | 1 mA @ 30 V | 30 V | 1.5A (DC) | 150°C (Max) | 550 mV @ 1.5 A | |
|
FMXA-1106SDIODE GEN PURP 600V 10A TO220F Sanken |
775 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 28 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.9 V @ 10 A | |
|
CDBFR0140LDIODE SCHOTTKY 40V 100MA 1005 Comchip Technology |
1,941 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 6pF @ 10V, 1MHz | - | 30 µA @ 10 V | 40 V | 100mA | 125°C (Max) | 550 mV @ 100 mA | |
|
STPS8H100GDIODE SCHOTTKY 100V 8A D2PAK STMicroelectronics |
253 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 4.5 µA @ 100 V | 100 V | 8A | 175°C (Max) | 710 mV @ 8 A | |
|
SB260-E3/73DIODE SCHOTTKY 60V 2A DO204AC Vishay General Semiconductor - Diodes Division |
1,808 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
|
MBRB1645T4GDIODE SCHOTTKY 45V 16A D2PAK onsemi |
114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 630 mV @ 16 A |
|
ZLLS400TADIODE SCHOTTKY 40V 520MA SOD323 Diodes Incorporated |
3,147 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 15pF @ 30V, 1MHz | 3 ns | 10 µA @ 30 V | 40 V | 520mA (DC) | 150°C (Max) | 500 mV @ 400 mA | |
|
SFA808G C0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
270 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
GPP20M-E3/73DIODE GEN PURP 1KV 2A DO204AC Vishay General Semiconductor - Diodes Division |
1,653 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
NRVB860MFST3GDIODE SCHOTTKY 60V 8A 5DFN onsemi |
3,115 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | 8A | -55°C ~ 175°C | 800 mV @ 8 A | |
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|
UFS340JE3/TR13DIODE GEN PURP 400V 3A DO214AB Microchip Technology |
2,988 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
BYW74-L36DIODE AVAL 3A 400V SOD64 Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | - | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
UH4PCCHM3_A/IDIODE GEN PURP 150V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,017 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
VS-20ETF12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,296 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
FFSM1065ADIODE SBD 650V 4PQFN onsemi |
2,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 575pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 11A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A | |
|
|
NRVB830MFST1GDIODE SCHOTTKY 30V 8A 5DFN onsemi |
3,250 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 8A | -40°C ~ 150°C | 700 mV @ 8 A | |
|
|
UFS350JE3/TR13DIODE GEN PURP 500V 3A DO214AB Microchip Technology |
2,969 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
SDURB860TRDIODE GEN PURP 600V D2PAK SMC Diode Solutions |
3,096 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 8 µA @ 600 V | 600 V | - | -55°C ~ 150°C | 1.7 V @ 8 A |
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