Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1SS367,H3F

1SS367,H3F

DIODE SCHOTTKY 10V 100MA SC76

Toshiba Semiconductor and Storage
21,446 -

RFQ

1SS367,H3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 40pF @ 0V, 1MHz - 20 µA @ 10 V 10 V 100mA 125°C (Max) 500 mV @ 100 mA
NTE6103

NTE6103

R-600PRV 550A ANODE CASE

NTE Electronics, Inc
2,951 -

RFQ

NTE6103

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 9 µs 50 mA @ 600 V 600 V 300A -65°C ~ 200°C 2.15 V @ 1500 A
1N5394-E3/54

1N5394-E3/54

DIODE GEN PURP 300V 1.5A DO204AL

Vishay General Semiconductor - Diodes Division
298 -

RFQ

1N5394-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 300 V 300 V 1.5A -50°C ~ 150°C 1.4 V @ 1.5 A
NTE6368

NTE6368

R-1400V 250A FAST REC KK

NTE Electronics, Inc
2,170 -

RFQ

NTE6368

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1 µs 50 mA @ 1400 V 1600 V 250A -40°C ~ 190°C 2 V @ 800 A
DA3S101A0L

DA3S101A0L

DIODE GEN PURP 80V 100MA SSMINI3

Panasonic Electronic Components
237 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Discontinued at Digi-Key Surface Mount 1.2pF @ 0V, 1MHz 3 ns 100 nA @ 80 V 80 V 100mA (DC) 150°C (Max) 1.2 V @ 100 mA
1N4148-TP

1N4148-TP

DIODE GEN PURP 75V 150MA DO35

Micro Commercial Co
10,989 -

RFQ

1N4148-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Obsolete Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 75 V 150mA -65°C ~ 175°C 1 V @ 10 mA
RB530CM-30T2R

RB530CM-30T2R

SCHOTTKY BARRIER DIODES. RB530C

Rohm Semiconductor
305 -

RFQ

RB530CM-30T2R

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 300 nA @ 10 V 30 V 100mA 150°C (Max) 460 mV @ 10 mA
1N4148-P-TR

1N4148-P-TR

DIODE GEN PURP 75V 2A DO35

Vishay General Semiconductor - Diodes Division
62,691 -

RFQ

1N4148-P-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Through Hole 4pF @ 0V, 1MHz 8 ns 5 µA @ 75 V 75 V 150mA 175°C (Max) 1 V @ 10 mA
BAV101-GS18

BAV101-GS18

DIODE GEN PURP 100V 250MA SOD80

Vishay General Semiconductor - Diodes Division
260 -

RFQ

BAV101-GS18

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 250mA (DC) 175°C (Max) 1 V @ 100 mA
1N4148-P-TAP

1N4148-P-TAP

DIODE GEN PURP 75V 2A DO35

Vishay General Semiconductor - Diodes Division
38,373 -

RFQ

1N4148-P-TAP

Ficha técnica

Cut Tape (CT),Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Through Hole 4pF @ 0V, 1MHz 8 ns 5 µA @ 75 V 75 V 150mA 175°C (Max) 1 V @ 10 mA
1N914BWT

1N914BWT

DIODE GEN PURP 75V 200MA SOD523F

onsemi
2,637 -

RFQ

1N914BWT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 75 V 200mA -55°C ~ 150°C 1 V @ 100 mA
1N4148-G

1N4148-G

DIODE GEN PURP 75V 150MA DO35

Comchip Technology
54,470 -

RFQ

1N4148-G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Obsolete Through Hole - - 5 µA @ 75 V 75 V 150mA -65°C ~ 200°C 1 V @ 10 mA
IDP30E60XKSA1

IDP30E60XKSA1

DIODE GEN PURP 600V 52.3A TO220

Rochester Electronics, LLC
3,858 -

RFQ

IDP30E60XKSA1

Ficha técnica

Bulk,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Through Hole - 126 ns 50 µA @ 600 V 600 V 52.3A (DC) -55°C ~ 175°C 2 V @ 30 A
VS-12TQ040STRR-M3

VS-12TQ040STRR-M3

DIODE SCHOTTKY 40V 15A D2PAK

Vishay General Semiconductor - Diodes Division
3,445 -

RFQ

VS-12TQ040STRR-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 40 V 40 V 15A -55°C ~ 150°C 560 mV @ 15 A
TST30H120CW C0G

TST30H120CW C0G

DIODE SCHOTTKY 120V 15A TO220AB

Taiwan Semiconductor Corporation
3,651 -

RFQ

TST30H120CW C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 250 µA @ 120 V 120 V 15A -55°C ~ 150°C 880 mV @ 15 A
BAS70LT1G

BAS70LT1G

DIODE SCHOTTKY 70V 70MA SOT23-3

onsemi
6,060 -

RFQ

BAS70LT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 10 µA @ 70 V 70 V 70mA (DC) -55°C ~ 150°C 1 V @ 15 mA
RB510SM-30FHT2R

RB510SM-30FHT2R

RB510SM-30FH IS THE HIGH RELIABI

Rohm Semiconductor
23,100 -

RFQ

RB510SM-30FHT2R

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount - - 300 nA @ 10 V 30 V 100mA 150°C (Max) 460 mV @ 10 mA
6A6GTA

6A6GTA

DIODE GEN PURP 600V 6A R-6

SMC Diode Solutions
3,012 -

RFQ

6A6GTA

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 150pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -65°C ~ 175°C 950 mV @ 6 A
1N4246/TR

1N4246/TR

RECTIFIER UFR,FRR

Microchip Technology
3,922 -

RFQ

1N4246/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 3 A
AS1PDHM3/85A

AS1PDHM3/85A

DIODE AVALANCHE 200V 1.5A DO220

Vishay General Semiconductor - Diodes Division
2,658 -

RFQ

AS1PDHM3/85A

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 10.4pF @ 4V, 1MHz 1.5 µs 5 µA @ 200 V 200 V 1.5A (DC) -55°C ~ 175°C 1.15 V @ 1.5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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