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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SD090SB45B.T1 PIV 45V IO 7.5A CHIP SIZE 90MIL SMC Diode Solutions	3,737	-	RFQ	Ficha técnica	Tray	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	400pF @ 5V, 1MHz	-	200 µA @ 45 V	45 V	7.5A	-55°C ~ 175°C	640 mV @ 7.5 A
CGRC504-G DIODE GEN PURP 400V 5A DO214AB Comchip Technology	3,939	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	10 µA @ 400 V	400 V	5A	150°C (Max)	1.15 V @ 5 A
BYT56A-TAP DIODE AVALANCHE 50V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,481	-	RFQ	Ficha técnica	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
SR1060 C0G DIODE SCHOTTKY 60V 10A TO220AB Taiwan Semiconductor Corporation	2,590	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	10A	-55°C ~ 150°C	700 mV @ 5 A
BYM36C-TAP DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,505	-	RFQ	Ficha técnica	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.6 V @ 3 A
S10KC V6G DIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation	3,756	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	-	1 µA @ 800 V	800 V	10A	-55°C ~ 150°C	-
SD091SB150A.T1 PIV 150V IO 7.5A CHIP SIZE 90MIL SMC Diode Solutions	2,267	-	RFQ	Ficha técnica	Tray	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	250pF @ 5V, 1MHz	-	250 µA @ 150 V	150 V	7.5A	-55°C ~ 175°C	890 mV @ 7.5 A
CGRC507-G DIODE GEN PURP 1KV 5A DO214AB Comchip Technology	2,064	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	10 µA @ 1000 V	1000 V	5A	150°C (Max)	1.15 V @ 5 A
BYT56B-TAP DIODE AVALANCHE 100V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,520	-	RFQ	Ficha técnica	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
RBR2MM60BTR DIODE SCHOTTKY 60V 2A PMDU Rohm Semiconductor	3,991	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 60 V	60 V	2A	150°C (Max)	580 mV @ 2 A
BYT56G-TAP DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,406	-	RFQ	Ficha técnica	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
S10MC V6G DIODE GEN PURP 10A DO214AB Taiwan Semiconductor Corporation	2,472	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	-	1 µA @ 1000 V	-	10A	-55°C ~ 150°C	-
SFF1608G C0G DIODE GEN PURP 600V 16A ITO220AB Taiwan Semiconductor Corporation	2,141	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	16A	-55°C ~ 150°C	1.7 V @ 8 A
CGRC502-G DIODE GEN PURP 100V 5A DO214AB Comchip Technology	3,291	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	10 µA @ 100 V	100 V	5A	150°C (Max)	1.15 V @ 5 A
BYT56A-TR DIODE AVALANCHE 50V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,030	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 50 V	50 V	3A	-55°C ~ 175°C	1.4 V @ 3 A
RB520ZS-30T2R DIODE SCHOTTKY 30V 100MA GMD2 Rohm Semiconductor	2,353	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	-	-	300 nA @ 10 V	30 V	100mA	150°C (Max)	460 mV @ 10 mA
BYW72-TAP DIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,278	-	RFQ	Ficha técnica	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
MBRB1635-E3/45 DIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division	3,301	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 35 V	35 V	16A	-65°C ~ 150°C	630 mV @ 16 A
SS520C-HF DIODE SCHOTTKY 5A 200V SMC Comchip Technology	3,669	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	400pF @ 4V, 1MHz	-	1 mA @ 200 V	200 V	5A	-55°C ~ 150°C	850 mV @ 5 A
CGRC503-G DIODE GEN PURP 200V 5A DO214AB Comchip Technology	2,444	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	10 µA @ 200 V	200 V	5A	150°C (Max)	1.15 V @ 5 A