Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SE70PD-M3/86A

SE70PD-M3/86A

DIODE GEN PURP 200V 2.9A TO277A

Vishay General Semiconductor - Diodes Division
2,918 -

RFQ

SE70PD-M3/86A

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 76pF @ 4V, 1MHz 2.6 µs 20 µA @ 200 V 200 V 2.9A (DC) -55°C ~ 175°C 1.05 V @ 7 A
SFAF1004G C0G

SFAF1004G C0G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation
3,042 -

RFQ

SFAF1004G C0G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 10 A
UFS380GE3/TR13

UFS380GE3/TR13

DIODE GEN PURP 800V 3A DO215AB

Microchip Technology
2,457 -

RFQ

UFS380GE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 800 V 800 V 3A -55°C ~ 175°C 1.2 V @ 3 A
FESF16GTHE3_A/P

FESF16GTHE3_A/P

DIODE GEN PURP 400V 16A ITO220AC

Vishay General Semiconductor - Diodes Division
3,159 -

RFQ

FESF16GTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 400 V 400 V 16A -65°C ~ 150°C 1.3 V @ 16 A
RU 2AMV1

RU 2AMV1

DIODE GEN PURP 600V 1.1A AXIAL

Sanken
2,424 -

RFQ

RU 2AMV1

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 600 V 1.1A -40°C ~ 150°C 1.2 V @ 1.1 A
SE70PG-M3/86A

SE70PG-M3/86A

DIODE GEN PURP 400V 2.9A TO277A

Vishay General Semiconductor - Diodes Division
2,645 -

RFQ

SE70PG-M3/86A

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 76pF @ 4V, 1MHz 2.6 µs 20 µA @ 400 V 400 V 2.9A (DC) -55°C ~ 175°C 1.05 V @ 7 A
VS-30WQ04FNHM3

VS-30WQ04FNHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division
3,949 -

RFQ

VS-30WQ04FNHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
5822SMJE3/TR13

5822SMJE3/TR13

DIODE SCHOTTKY 40V 3A SMCJ

Microchip Technology
3,813 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.5 mA @ 40 V 40 V 3A -55°C ~ 150°C 500 mV @ 3 A
FESF16HTHE3_A/P

FESF16HTHE3_A/P

DIODE GEN PURP 500V 16A ITO220AC

Vishay General Semiconductor - Diodes Division
3,215 -

RFQ

FESF16HTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 500 V 500 V 16A -65°C ~ 150°C 1.5 V @ 16 A
RU 3BV1

RU 3BV1

DIODE GEN PURP 800V 1.1A AXIAL

Sanken
2,637 -

RFQ

RU 3BV1

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 800 V 1.1A -40°C ~ 150°C 1.5 V @ 1 A
SE70PJ-M3/86A

SE70PJ-M3/86A

DIODE GEN PURP 600V 2.9A TO277A

Vishay General Semiconductor - Diodes Division
3,541 -

RFQ

SE70PJ-M3/86A

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 76pF @ 4V, 1MHz 2.6 µs 20 µA @ 600 V 600 V 2.9A (DC) -55°C ~ 175°C 1.05 V @ 7 A
VS-30WQ04FNTRHM3

VS-30WQ04FNTRHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division
3,795 -

RFQ

VS-30WQ04FNTRHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
VS-10ETF04-M3

VS-10ETF04-M3

DIODE GEN PURP 400V 10A TO220AC

Vishay General Semiconductor - Diodes Division
2,352 -

RFQ

VS-10ETF04-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 100 µA @ 400 V 400 V 10A -45°C ~ 150°C 1.2 V @ 10 A
JAN1N914UR/TR

JAN1N914UR/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,376 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 50 mA
RU 3CV1

RU 3CV1

DIODE GEN PURP 1KV 1.5A AXIAL

Sanken
2,822 -

RFQ

RU 3CV1

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 1000 V 1000 V 1.5A -40°C ~ 150°C 2 V @ 1.5 A
VT5200-E3/4W

VT5200-E3/4W

DIODE SCHOTTKY 5A 200V TO-220AC

Vishay General Semiconductor - Diodes Division
2,983 -

RFQ

VT5200-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 200 V 200 V 5A -40°C ~ 150°C 1.6 V @ 5 A
FESF16JTHE3_A/P

FESF16JTHE3_A/P

DIODE GEN PURP 600V 16A ITO220AC

Vishay General Semiconductor - Diodes Division
2,447 -

RFQ

FESF16JTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.5 V @ 16 A
VS-30WQ04FNTRLHM3

VS-30WQ04FNTRLHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division
3,287 -

RFQ

VS-30WQ04FNTRLHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
VS-10ETF12-M3

VS-10ETF12-M3

DIODE GEN PURP 1.2KV 10A TO220AC

Vishay General Semiconductor - Diodes Division
3,092 -

RFQ

VS-10ETF12-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 310 ns 100 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.33 V @ 10 A
1N4245/TR

1N4245/TR

RECTIFIER UFR,FRR

Microchip Technology
3,600 -

RFQ

1N4245/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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