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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
64101TRANSISTOR Microchip Technology |
3,700 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
68190TRANSISTOR Microchip Technology |
2,182 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
68191TRANSISTOR Microchip Technology |
3,491 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
1N5418DIODE GEN PURP 400V 3A B-MELF Microchip Technology |
2,336 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
1N5811USDIODE GEN PURP 150V 3A B-MELF Microchip Technology |
2,365 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 50 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
|
1N5554USDIODE GEN PURP 1KV 3A B-MELF Microchip Technology |
2,905 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
APT40DQ120BGDIODE GEN PURP 1.2KV 40A TO247 Microchip Technology |
3,364 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 350 ns | 100 µA @ 1200 V | 1200 V | 40A | -55°C ~ 175°C | 3.3 V @ 40 A | |
|
|
APT30D120BGDIODE GEN PURP 1.2KV 30A TO247 Microchip Technology |
2,681 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 370 ns | 250 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.5 V @ 30 A | |
|
JANTX1N3595-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
3,381 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 3 µs | 1 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA |
|
|
APT75DQ60BGDIODE GEN PURP 600V 75A TO247 Microchip Technology |
3,850 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 31 ns | 25 µA @ 600 V | 600 V | 75A | -55°C ~ 175°C | 2.5 V @ 75 A | |
|
APT15DQ120BHBGFRED DQ 1200 V 15 A TO-247 Microchip Technology |
2,489 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 240 ns | 100 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 3.5 V @ 15 A | |
|
APT100D60B2GFRED D 600 V 100 A TO-247 MAX Microchip Technology |
3,280 | - |
RFQ |
Tube | RoHS | - | Standard | Active | Through Hole | - | - | - | 600 V | 100A | - | - | ||
|
|
JANTX1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
3,809 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 70 V | 33mA | -65°C ~ 150°C | 410 mV @ 1 mA |
|
JANTX1N5811USDIODE GEN PURP 150V 3A B-MELF Microchip Technology |
2,231 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
1N5416USDIODE GEN PURP 100V 3A D5B Microchip Technology |
3,957 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
MSC050SDA170BSIC SBD 1700 V 50 A TO-247 Microchip Technology |
3,047 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 4450pF @ 1V, 1MHz | 0 ns | 200 µA @ 1700 V | 1700 V | 136A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |
|
|
UES1306HR2/TRUFR,FRR Microchip Technology |
2,409 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 20 µA @ 400 V | 400 V | 5A | - | 1 V @ 5 A | ||
|
|
MSC090SMA120SMOSFET N-CH 1200V D3PAK Microchip Technology |
3,945 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
MSC750SMA120SMOSFET N-CH 1200V D3PAK Microchip Technology |
2,629 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
APT10SCE120BDIODE SCHOTTKY 1200V 10A TO247 Microchip Technology |
3,449 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 630pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 43A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
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