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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5618USDIODE GEN PURP 600V 1A D5A Microchip Technology |
188 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JANTXV1N3673ARDIODE GEN PURP 1KV 12A DO203AA Microchip Technology |
3,110 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/260 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 5 µA @ 1000 V | 1000 V | 12A | -65°C ~ 150°C | 1.35 V @ 38 A |
|
|
UES2601RRECTIFIER Microchip Technology |
3,677 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 20 µA @ 50 V | 50 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
|
UES2602RRECTIFIER Microchip Technology |
3,953 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 20 µA @ 100 V | 100 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
|
UES2603RRECTIFIER Microchip Technology |
2,023 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 20 µA @ 150 V | 150 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
|
UES2604RRECTIFIER Microchip Technology |
2,848 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 30A | -55°C ~ 150°C | 1.25 V @ 15 A | |
|
|
UES2605RRECTIFIER Microchip Technology |
3,901 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 50 ns | 50 µA @ 300 V | 300 V | 30A | -55°C ~ 150°C | 1.25 V @ 15 A | |
|
|
UES2606RRECTIFIER Microchip Technology |
2,492 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 50 ns | 50 µA @ 400 V | 400 V | 30A | -55°C ~ 150°C | 1.25 V @ 15 A | |
|
|
1N6761DIODE SCHOTTKY DO-41 Microchip Technology |
3,210 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 70pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 690 mV @ 1 A | ||
|
1N6761/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,461 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 70pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 690 mV @ 1 A | |
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|
HSM560JE3/TR13DIODE SCHOTTKY 60V 5A DO214AB Microchip Technology |
16,131 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 60 V | 60 V | 5A | -55°C ~ 175°C | 650 mV @ 5 A | |
|
JANS1N6639SWITCHING DIODE Microchip Technology |
3,851 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 500 mA | |
|
|
JANS1N6641SWITCHING DIODE Microchip Technology |
2,450 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 ns | 100 nA @ 50 V | 100 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA | |
|
JANS1N6640/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,838 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
|
1N647-1DIODE GEN PURP 400V 400MA DO35 Microchip Technology |
4,510 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 400 V | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
|
1N5617USDIODE GEN PURP 400V 1A D5A Microchip Technology |
269 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
1N6643USDIODE GEN PURP 50V 300MA D5B Microchip Technology |
1,049 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 20 ns | 50 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
APT60DQ60BGDIODE GEN PURP 600V 60A TO247 Microchip Technology |
338 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 25 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 2.4 V @ 60 A | |
|
|
JANTXV1N5712UBDSCHOTTKY DIODE Microchip Technology |
3,998 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | - | -65°C ~ 150°C | 1 V @ 35 mA | |
|
|
JANTXV1N5712UBCASCHOTTKY DIODE Microchip Technology |
2,911 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | - | -65°C ~ 150°C | 1 V @ 35 mA |
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