Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JANTXV1N6623U

JANTXV1N6623U

DIODE GEN PURP 800V 1A A-MELF

Microchip Technology
2,334 -

RFQ

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 500 nA @ 800 V 800 V 1A -65°C ~ 150°C 1.55 V @ 1 A
JANTXV1N6624U

JANTXV1N6624U

DIODE GEN PURP 900V 1A A-MELF

Microchip Technology
2,799 -

RFQ

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 500 nA @ 900 V 900 V 1A -65°C ~ 150°C 1.55 V @ 1 A
JANTX1N6626U

JANTX1N6626U

DIODE GEN PURP 200V 1.75A A-MELF

Microchip Technology
2,183 -

RFQ

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 200 V 200 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
JANTX1N6627U

JANTX1N6627U

DIODE GEN PURP 400V 1.75A E-MELF

Microchip Technology
2,291 -

RFQ

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 400 V 400 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
APT60S20BG

APT60S20BG

DIODE SCHOTTKY 200V 75A TO247

Microchip Technology
1,380 -

RFQ

APT60S20BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - 55 ns 1 mA @ 200 V 200 V 75A -55°C ~ 150°C 900 mV @ 60 A
JANTXV1N6843U3

JANTXV1N6843U3

SCHOTTKY DIODE

Microchip Technology
2,551 -

RFQ

Bulk RoHS - - Active - - - - - - - -
UES1002/TR

UES1002/TR

RECTIFIER UFR,FRR

Microchip Technology
3,881 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 2 µA @ 100 V 100 V 1A -55°C ~ 175°C 975 mV @ 1 A
LSM115JE3/TR13

LSM115JE3/TR13

DIODE SCHOTTKY 15V 1A DO214BA

Microchip Technology
17,455 -

RFQ

LSM115JE3/TR13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 10 mA @ 15 V 15 V 1A -55°C ~ 150°C 220 mV @ 1 A
1N5552

1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology
1,115 -

RFQ

1N5552

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.2 V @ 9 A
APT100S20BG

APT100S20BG

DIODE SCHOTTKY 200V 120A TO247

Microchip Technology
4,207 -

RFQ

APT100S20BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - 70 ns 2 mA @ 200 V 200 V 120A -55°C ~ 150°C 950 mV @ 100 A
MSASC100W100H/TR

MSASC100W100H/TR

DIODE POWER SCHOTTKY

Microchip Technology
3,601 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 100 V 100A -65°C ~ 175°C 950 mV @ 80 A
1N6774

1N6774

RECTIFIER DIODE

Microchip Technology
2,372 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 300pF @ 5V, 1MHz 35 ns 10 µA @ 800 mV 50 V 15A (DC) -65°C ~ 150°C 1.15 V @ 15 A
JANTXV1N7043CAT1

JANTXV1N7043CAT1

SCHOTTKY DIODE

Microchip Technology
2,073 -

RFQ

JANTXV1N7043CAT1

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
JANTXV1N7043CCT1

JANTXV1N7043CCT1

SCHOTTKY DIODE

Microchip Technology
3,356 -

RFQ

JANTXV1N7043CCT1

Ficha técnica

Bulk Military, MIL-PRF-19500/730 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 600pF @ 0V, 1MHz - 500 µA @ 100 V 100 V 35A -65°C ~ 150°C 1.3 V @ 35 A
1N6842U3

1N6842U3

SCHOTTKY RECTIFIER

Microchip Technology
3,751 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 50 µA @ 60 V 60 V 10A -65°C ~ 150°C 900 mV @ 15 A
JANTXV1N6074

JANTXV1N6074

DIODE GEN PURP 100V 850MA AXIAL

Microchip Technology
3,111 -

RFQ

JANTXV1N6074

Ficha técnica

Bulk Military, MIL-PRF-19500/503 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 100 V 100 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
1N6841

1N6841

SCHOTTKY RECTIFIER

Microchip Technology
2,303 -

RFQ

1N6841

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
JANTXV1N6075

JANTXV1N6075

DIODE GEN PURP 150V 850MA AXIAL

Microchip Technology
2,184 -

RFQ

JANTXV1N6075

Ficha técnica

Bulk Military, MIL-PRF-19500/503 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 150 V 150 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
1N6841U3

1N6841U3

SCHOTTKY RECTIFIER

Microchip Technology
2,009 -

RFQ

1N6841U3

Ficha técnica

Bulk Military, MIL-PRF-19500/678 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 100 µA @ 45 V 45 V 10A -65°C ~ 150°C 880 mV @ 20 A
JANTXV1N6073

JANTXV1N6073

DIODE GEN PURP 50V 850MA AXIAL

Microchip Technology
3,491 -

RFQ

JANTXV1N6073

Ficha técnica

Bulk Military, MIL-PRF-19500/503 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 50 V 50 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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