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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-95PFR120WDIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,883 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 1200 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
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BYG10KHM3_A/IDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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S5PMS-M3/86ADIODE GEN PURP 1KV 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,712 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 1.8A (DC) | -55°C ~ 150°C | 940 mV @ 2.5 A | |
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BAV302-TR3DIODE GP 150V 250MA MICROMELF Vishay General Semiconductor - Diodes Division |
2,764 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
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BAS33-TAPDIODE GEN PURP 30V 200MA DO35 Vishay General Semiconductor - Diodes Division |
2,119 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 3pF @ 0V, 1MHz | - | 1 nA @ 15 V | 30 V | 200mA | 175°C (Max) | 1 V @ 100 mA |
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BAS16WS-G3-18DIODE GEN PURP 75V 250MA SOD323 Vishay General Semiconductor - Diodes Division |
3,136 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
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SSB43L-M3/5BTDIODE SCHOTTKY 4A 30V DO-214AC Vishay General Semiconductor - Diodes Division |
2,914 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A | ||
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BAS19-G3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
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SSB43L-M3/52TDIODE SCHOTTKY 4A 30V DO-214AA Vishay General Semiconductor - Diodes Division |
3,078 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 450 mV @ 4 A | ||
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BAS20-G3-18DIODE GEN PURP 150V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,896 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
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EGL41A-E3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,247 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
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BAS21-G3-18DIODE GEN PURP 200V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,549 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
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EGL41F-E3/96DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
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BAS19-G3-08DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,366 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
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BAS20-G3-08DIODE GEN PURP 150V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,015 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
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BAS21-G3-08DIODE GEN PURP 200V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
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SSA23LHE3_A/HDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 450 mV @ 2 A |
|
VS-T40HFL20S02DIODE GEN PURP 200V 40A D-55 Vishay General Semiconductor - Diodes Division |
3,992 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 40A | - | - | |
|
VS-175BGQ030HF4DIODE SCHOTTKY 175A 30V POWERTAB Vishay General Semiconductor - Diodes Division |
2,619 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 8500pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 175A | -55°C ~ 150°C | 590 mV @ 175 A |
|
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VS-50PFR140DIODE GEN PURP 1.4KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
2,105 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 50A | -55°C ~ 160°C | 1.5 V @ 125 A |
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