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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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U3C-E3/57TDIODE GEN PURP 150V 2A DO214AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
BYM12-100HE3_A/IDIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,664 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
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S5DHE3_A/IDIODE GEN PURP 200V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,612 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
ES07D-M-18DIODE GEN PURP 200V 500MA DO219 Vishay General Semiconductor - Diodes Division |
2,503 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 25 ns | 10 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 980 mV @ 1 A |
|
EGF1T-E3/5CADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
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BYM12-150HE3_A/IDIODE GEN PURP 150V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,046 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
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S5KHE3_A/IDIODE GEN PURP 800V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
BYT53C-TAPDIODE AVALANCHE 150V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,861 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
ES07B-M-08DIODE GEN PURP 100V 500MA DO219 Vishay General Semiconductor - Diodes Division |
2,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 25 ns | 10 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 980 mV @ 1 A |
|
|
BYM12-200HE3_A/IDIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,638 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
S4PBHM3_A/HDIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,153 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 4A | -65°C ~ 175°C | 1.1 V @ 4 A |
|
|
BYT54J-TAPDIODE AVALANCHE 600V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
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BYM12-300HE3_A/IDIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,412 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
S4PDHM3_A/HDIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,847 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
|
BYV15-TAPDIODE AVALANCHE 800V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
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BYM12-400HE3_A/IDIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
S4PKHM3_A/HDIODE GEN PURP 800V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,136 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
|
SE80PWB-M3/IDIODE GEN PURP 100V 8A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 58pF @ 4V, 1MHz | 2.4 µs | 15 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 1.12 V @ 8 A |
|
|
BYW35-TAPDIODE AVALANCHE 500V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,959 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYM12-50HE3_A/IDIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,689 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
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