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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GIB1401-E3/81DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,740 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
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GIB1402-E3/81DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,594 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
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GIB1403-E3/81DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
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GIB1404-E3/81DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,605 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | |
|
ES2DHM3_A/I2A 200V SM ULTRAFAST RECT SMB Vishay General Semiconductor - Diodes Division |
2,194 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
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ES2DHM3_A/H2A 200V SM ULTRAFAST RECT SMB Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
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VS-15ETX06STRL-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
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VS-15ETX06STRR-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,327 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
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MBRB1645HE3_B/IDIODE SCHOTTKY 45V 16A D2PAK Vishay General Semiconductor - Diodes Division |
2,828 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
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MBRB1635HE3_B/PDIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,314 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A |
|
BYG22B-E3/TR3DIODE AVALANCHE 100V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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MBRB1645HE3_B/PDIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,518 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A |
|
UF4005-E3/53DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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MBRB1660HE3_B/PDIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,008 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A |
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UF4006-E3/53DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,102 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
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MBRB1635HE3_B/IDIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,487 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A |
|
VS-8TQ100SL-M3PSCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
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VS-VSKE250-04PBFDIODE GP 400V 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 400 V | 400 V | 250A | -40°C ~ 150°C | - | |
|
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VS-VSKE250-08PBFDIODE GP 800V 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,617 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 800 V | 800 V | 250A | -40°C ~ 150°C | - | |
|
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VS-VSKE250-12PBFDIODE GP 1.2KV 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 1200 V | 1200 V | 250A | -40°C ~ 150°C | - |
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