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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AU2PMHM3_A/IDIODE AVALANCH 1KV 1.3A TO277A Vishay General Semiconductor - Diodes Division |
2,132 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 29pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1.3A | -55°C ~ 175°C | 2.5 V @ 2 A |
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VS-8EWS10S-M3DIODE GEN PURP 1KV 8A DPAK Vishay General Semiconductor - Diodes Division |
3,336 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||
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BYM10-1000HE3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,441 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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VS-8EWS10STRL-M3DIODE GEN PURP 1KV 8A DPAK Vishay General Semiconductor - Diodes Division |
2,196 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||
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BYM10-100HE3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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VS-8EWS10STR-M3DIODE GEN PURP 1KV 8A DPAK Vishay General Semiconductor - Diodes Division |
3,692 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
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VS-8EWS10STRR-M3DIODE GEN PURP 1KV 8A DPAK Vishay General Semiconductor - Diodes Division |
3,493 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
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BYM10-200HE3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,390 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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V15P15HM3/HDIODE SCHOTTKY 150V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,470 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 15A | -40°C ~ 150°C | 1.08 V @ 15 A |
|
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BYM10-400HE3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,181 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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V15P15HM3/IDIODE SCHOTTKY 150V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,494 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 150 V | 150 V | 15A | -40°C ~ 150°C | 1.08 V @ 15 A |
|
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BYM10-50HE3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,927 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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V25PN60-M3/87ADIODE SCHOTTKY 60V 6.4A TO277A Vishay General Semiconductor - Diodes Division |
2,151 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 6 mA @ 60 V | 60 V | 6.4A | -40°C ~ 150°C | 590 mV @ 25 A |
|
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BYM10-600HE3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,976 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
VF20100SG-M3/4WDIODE SCHOTTKY 20A 100V ITO220AB Vishay General Semiconductor - Diodes Division |
2,426 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A | ||
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BYM10-800HE3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
BYM07-100HE3_A/IDIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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VS-8EWH06FN-M3DIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,982 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
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BYM07-200HE3_A/IDIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,810 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
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VS-8EWH06FNTRL-M3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,107 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
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