Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-90APF12L-M3

VS-90APF12L-M3

RECTIFIER DIODE 90A 1200V TO-247

Vishay General Semiconductor - Diodes Division
3,380 -

RFQ

VS-90APF12L-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 90A -40°C ~ 150°C 1.38 V @ 90 A
1N5194UR

1N5194UR

DIODE GEN PURP 70V 200MA DO213AA

Microchip Technology
3,091 -

RFQ

1N5194UR

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 25 nA @ 70 V 70 V 200mA -65°C ~ 175°C 1 V @ 100 mA
MBR2090CTE3/TU

MBR2090CTE3/TU

DIODE SCHOTTKY 20A 90V TO220AB

Microchip Technology
3,315 -

RFQ

Tube RoHS - - Active - - - - - - - -
VS-MBRB745-M3

VS-MBRB745-M3

DIODE SCHOTTKY 45V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division
3,303 -

RFQ

VS-MBRB745-M3

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 5V, 1MHz - 100 µA @ 45 V 45 V 7.5A -65°C ~ 150°C 570 mV @ 7.5 A
FFSH2065ADN-F155

FFSH2065ADN-F155

650V 20A SIC SBD

onsemi
2,570 -

RFQ

FFSH2065ADN-F155

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 575pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 13A (DC) -55°C ~ 175°C -
VS-95PFR80

VS-95PFR80

DIODE GEN PURP 800V 95A DO203AB

Vishay General Semiconductor - Diodes Division
2,941 -

RFQ

VS-95PFR80

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 800 V 95A -55°C ~ 180°C 1.4 V @ 267 A
VS-50PFR140W

VS-50PFR140W

DIODE GEN PURP 1.4KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
2,993 -

RFQ

VS-50PFR140W

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - - 1400 V 50A -55°C ~ 160°C 1.5 V @ 125 A
1N5196UR

1N5196UR

DIODE GEN PURP 225V 200MA DO213

Microchip Technology
2,145 -

RFQ

1N5196UR

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 25 nA @ 225 V 225 V 200mA -65°C ~ 175°C 1 V @ 100 mA
MBR30150CTE3/TU

MBR30150CTE3/TU

DIODE SCHOTTKY 30A 150V TO220AB

Microchip Technology
3,746 -

RFQ

Tube RoHS - - Active - - - - - - - -
VI10150S-E3/4W

VI10150S-E3/4W

DIODE SCHOTTKY 150V 10A TO262AA

Vishay General Semiconductor - Diodes Division
2,293 -

RFQ

VI10150S-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.2 V @ 10 A
1N5807US/TR

1N5807US/TR

RECTIFIER UFR,FRR

Microchip Technology
2,228 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 10V, 1MHz 30 ns 5 µA @ 50 V 50 V 3A -65°C ~ 175°C 875 mV @ 4 A
VS-6FLR100S05

VS-6FLR100S05

DIODE GEN PURP 1KV 6A DO203AA

Vishay General Semiconductor - Diodes Division
2,259 -

RFQ

VS-6FLR100S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 6A -65°C ~ 150°C 1.4 V @ 6 A
FFSD1065B-F085

FFSD1065B-F085

650V 10A SIC SBD GEN1.5

onsemi
2,613 -

RFQ

FFSD1065B-F085

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 424pF @ 1V, 100kHz 0 ns 40 µA @ 650 V 650 V 13.5A (DC) -55°C ~ 175°C 1.7 V @ 10 A
JANTX1N5712-1

JANTX1N5712-1

DIODE SCHOTTKY 20V 750MA DO35

Microchip Technology
2,286 -

RFQ

JANTX1N5712-1

Ficha técnica

Bulk Military, MIL-PRF-19500/444 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2pF @ 0V, 1MHz - 150 nA @ 16 V 20 V 750mA -65°C ~ 150°C 1 V @ 35 mA
MBR4060PTE3/TU

MBR4060PTE3/TU

DIODE SCHOTTKY 40A 60V TO-247AD

Microchip Technology
3,592 -

RFQ

Tube RoHS - - Active - - - - - - - -
MBR1045MFST3G

MBR1045MFST3G

DIODE SCHOTTKY 45V 10A 5DFN

onsemi
3,101 -

RFQ

MBR1045MFST3G

Ficha técnica

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 45 V 45 V 10A -55°C ~ 150°C 750 mV @ 20 A
1N5809US/TR

1N5809US/TR

RECTIFIER UFR,FRR

Microchip Technology
2,730 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 10V, 1MHz 30 ns 5 µA @ 100 V 100 V 3A -65°C ~ 175°C 875 mV @ 4 A
1N5811USE3/TR

1N5811USE3/TR

RECTIFIER UFR,FRR

Microchip Technology
2,349 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns - 150 V 3A -65°C ~ 175°C 875 mV @ 4 A
JAN1N5620

JAN1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
3,552 -

RFQ

JAN1N5620

Ficha técnica

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
1N4944/TR

1N4944/TR

RECTIFIER UFR,FRR

Microchip Technology
2,714 -

RFQ

1N4944/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 12V, 1MHz 150 ns 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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