Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MSRT100140AD

MSRT100140AD

DIODE GEN 1.4KV 100A 3 TOWER

GeneSiC Semiconductor
2,094 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRT100160AD

MSRT100160AD

DIODE GEN 1.6KV 100A 3 TOWER

GeneSiC Semiconductor
3,827 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C Chassis Mount
MSRT10060AD

MSRT10060AD

DIODE GEN PURP 600V 100A 3 TOWER

GeneSiC Semiconductor
2,851 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT10080AD

MSRT10080AD

DIODE GEN PURP 800V 100A 3 TOWER

GeneSiC Semiconductor
2,776 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C Chassis Mount
M5060CC600

M5060CC600

DIODE MODULE 600V 60A

Sensata-Crydom
3,324 -

RFQ

M5060CC600

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 60A (DC) 1.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C Chassis Mount
MSRT250100A

MSRT250100A

DIODE MODULE 1KV 250A 3TOWER

GeneSiC Semiconductor
2,295 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1000 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT250120A

MSRT250120A

DIODE MODULE 1.2KV 250A 3TOWER

GeneSiC Semiconductor
3,500 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1200 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT250140A

MSRT250140A

DIODE MODULE 1.4KV 250A 3TOWER

GeneSiC Semiconductor
2,617 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1400 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT250160A

MSRT250160A

DIODE MODULE 1.6KV 250A 3TOWER

GeneSiC Semiconductor
2,585 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1600 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT25060A

MSRT25060A

DIODE MODULE 600V 250A 3TOWER

GeneSiC Semiconductor
3,074 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 600 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT25080A

MSRT25080A

DIODE MODULE 800V 250A 3TOWER

GeneSiC Semiconductor
3,616 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 800 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
B484F-2

B484F-2

DIODE MODULE 1.2KV 50A

Sensata-Crydom
2,261 -

RFQ

B484F-2

Ficha técnica

Bulk,Box - Active 3 Common Cathode Standard 1200 V 50A (DC) 1.35 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C Chassis Mount
MBR2X080A100

MBR2X080A100

DIODE SCHOTTKY 100V 80A SOT227

GeneSiC Semiconductor
3,781 -

RFQ

MBR2X080A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 80A 840 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X160A080

MBR2X160A080

DIODE SCHOTTKY 80V 160A SOT227

GeneSiC Semiconductor
2,858 -

RFQ

MBR2X160A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 160A 840 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X160A100

MBR2X160A100

DIODE SCHOTTKY 100V 160A SOT227

GeneSiC Semiconductor
3,443 -

RFQ

MBR2X160A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 160A 840 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X160A120

MBR2X160A120

DIODE SCHOTTKY 120V 160A SOT227

GeneSiC Semiconductor
2,642 -

RFQ

MBR2X160A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 160A 880 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X160A150

MBR2X160A150

DIODE SCHOTTKY 150V 160A SOT227

GeneSiC Semiconductor
2,878 -

RFQ

MBR2X160A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 160A 880 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X160A180

MBR2X160A180

DIODE SCHOTTKY 180V 160A SOT227

GeneSiC Semiconductor
2,464 -

RFQ

MBR2X160A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 160A 920 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X160A200

MBR2X160A200

DIODE SCHOTTKY 200V 160A SOT227

GeneSiC Semiconductor
3,688 -

RFQ

MBR2X160A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 160A 920 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
SBT3050C

SBT3050C

POWER SCHOTTKY

Microchip Technology
3,045 -

RFQ

Bulk - Active 1 Pair Common Cathode Schottky 50 V 30A 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 50 V -65°C ~ 175°C Through Hole
Total 14902 Record«Prev1... 651652653654655656657658...746Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario