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Diodos - Rectificadores - Matrices

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
MBR40100PT DIODE ARRAY SCHOTTKY 100V TO247 Taiwan Semiconductor Corporation	2,294	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-55°C ~ 150°C	Through Hole
MBR4045PT DIODE ARRAY SCHOTTKY 45V TO247AD Taiwan Semiconductor Corporation	3,248	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	45 V	40A	800 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-55°C ~ 150°C	Through Hole
MBR4060PT DIODE ARRAY SCHOTTKY 60V TO247AD Taiwan Semiconductor Corporation	3,359	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	60 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-55°C ~ 150°C	Through Hole
TSF30H45C DIODE ARRAY SCHOTT 45V ITO220AB Taiwan Semiconductor Corporation	2,440	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	45 V	15A	610 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-55°C ~ 150°C	Through Hole
TSF30H60C DIODE ARRAY SCHOTT 60V ITO220AB Taiwan Semiconductor Corporation	2,019	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	60 V	15A	700 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-55°C ~ 150°C	Through Hole
MBR40150PT DIODE ARRAY SCHOTTKY 150V TO247 Taiwan Semiconductor Corporation	2,776	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	150 V	40A	1.01 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-55°C ~ 150°C	Through Hole
MBR40200PT DIODE ARRAY SCHOTTKY 200V TO247 Taiwan Semiconductor Corporation	3,820	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	200 V	40A	1.01 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	-55°C ~ 150°C	Through Hole
MBR40150PTH DIODE ARRAY SCHOTTKY 150V TO247 Taiwan Semiconductor Corporation	2,377	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	Active	1 Pair Common Cathode	Schottky	150 V	40A	1.01 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-55°C ~ 150°C	Through Hole
MBR40200PTH DIODE ARRAY SCHOTTKY 200V TO247 Taiwan Semiconductor Corporation	2,993	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	Active	1 Pair Common Cathode	Schottky	200 V	40A	1.01 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	-55°C ~ 150°C	Through Hole
MBR6045PT DIODE ARRAY SCHOTTKY 45V TO247AD Taiwan Semiconductor Corporation	3,769	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	45 V	60A	820 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-55°C ~ 150°C	Through Hole
UG6005PT DIODE ARRAY GP 300V 60A TO247AD Taiwan Semiconductor Corporation	2,479	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	300 V	60A	1.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 300 V	-55°C ~ 175°C	Through Hole
MBR60100PT DIODE ARRAY SCHOTTKY 100V TO247 Taiwan Semiconductor Corporation	3,953	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	60A	980 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-55°C ~ 150°C	Through Hole
TSF40L200C DIODE ARRAY SCHOTT 200V ITO220AB Taiwan Semiconductor Corporation	3,988	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	200 V	20A	980 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	-55°C ~ 150°C	Through Hole
MBR60100PTH DIODE ARRAY SCHOTTKY 100V TO247 Taiwan Semiconductor Corporation	2,805	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	Active	1 Pair Common Cathode	Schottky	100 V	60A	980 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-55°C ~ 150°C	Through Hole
TSF40H100C DIODE ARRAY SCHOTT 100V ITO220AB Taiwan Semiconductor Corporation	2,846	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	20A	560 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-55°C ~ 150°C	Through Hole