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Diodos - Rectificadores - Matrices

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
BYV32EB-300PJ DUAL ULTRAFAST POWER DIODE WeEn Semiconductors	550	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Standard	300 V	20A	1.25 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 300 V	175°C (Max)	Surface Mount
BYQ28ED-200,118 DIODE ARRAY GP 200V 10A DPAK WeEn Semiconductors	2,598	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Standard	200 V	10A	1.25 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	150°C (Max)	Surface Mount
BYV410-600,127 DIODE ARRAY GP 600V 20A TO220AB WeEn Semiconductors	2,991	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	20A	2.1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	150°C (Max)	Through Hole
WNSC6D20650CW6Q DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	480	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
BYQ28ED-200PLJ DIODE ARRAY GP 200V 10A DPAK WeEn Semiconductors	2,549	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Active	1 Pair Common Cathode	Standard	200 V	10A	1.1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	150°C (Max)	Surface Mount
WNS20S100CXQ SCHOTTKY POWER DIODE WeEn Semiconductors	3,194	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	10A	950 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C (Max)	Through Hole
BYV32EB-200PJ DIODE ARRAY GP 200V 20A D2PAK WeEn Semiconductors	2,318	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Active	1 Pair Common Cathode	Standard	200 V	20A	1.15 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	175°C (Max)	Surface Mount
BYV32E-300PQ DUAL ULTRAFAST POWER DIODE WeEn Semiconductors	2,323	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	300 V	10A	1.25 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 300 V	175°C (Max)	Through Hole
BYV32E-200PQ DIODE ARRAY GP 200V 10A TO220AB WeEn Semiconductors	3,968	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	10A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	175°C (Max)	Through Hole
BYQ42E-200Q DIODE ARRAY GP 200V 15A TO220AB WeEn Semiconductors	3,885	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	15A	1.05 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	20 µA @ 200 V	150°C (Max)	Through Hole
WNS40H100CGQ SCHOTTKY POWER DIODE WeEn Semiconductors	3,061	-	RFQ	Ficha técnica	Tube	-	Active	-	Schottky	100 V	20A	710 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	150°C (Max)	Through Hole
BYQ72EK-200Q DIODE ARRAY GP 200V 15A TO3P WeEn Semiconductors	2,750	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	15A	900 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	20 µA @ 600 V	150°C (Max)	Through Hole
BYQ72EW-200Q DIODE ARRAY GP 200V 15A TO247-3 WeEn Semiconductors	3,304	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	200 V	15A	900 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	20 µA @ 200 V	150°C (Max)	Through Hole
BYV430J-600PQ DIODE ARRAY GP 600V 30A TO3P WeEn Semiconductors	2,429	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	10 µA @ 600 V	175°C (Max)	Through Hole
BYV415J-600PQ DIODE TO3PF STANDARD M WeEn Semiconductors	3,330	-	RFQ	Ficha técnica	Tube	-	Active	-	-	-	-	-	-	-	-	-	Through Hole
BYV430K-300PQ DIODE ARRAY GP 300V 30A TO3P WeEn Semiconductors	3,637	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	300 V	30A	1.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 300 V	175°C (Max)	Through Hole
BYV430W-300PQ DIODE ARRAY GP 300V 30A TO247-3 WeEn Semiconductors	3,167	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	300 V	30A	1.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	175°C (Max)	Through Hole
BYV430W-600PQ ULTRAFAST POWER DIODE WeEn Semiconductors	3,422	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	60A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	10 µA @ 600 V	175°C (Max)	Through Hole
NXPSC20650W-AQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	3,280	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	175°C (Max)	Through Hole
WNSC2D401200CW6Q DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	3,183	-	RFQ	Ficha técnica	Tape & Reel (TR)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	40A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 2000 V	175°C	Through Hole