Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
IDW30G120C5BFKSA1

IDW30G120C5BFKSA1

DIODE GEN PURP 1200V 44A TO247-3

Infineon Technologies
2,654 -

RFQ

IDW30G120C5BFKSA1

Ficha técnica

Tube CoolSiC™+ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 44A (DC) 1.65 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 124 µA @ 1200 V -55°C ~ 175°C Through Hole
MMBD7000LT1HTSA1

MMBD7000LT1HTSA1

DIODE ARRAY GP 100V 200MA SOT23

Infineon Technologies
2,776 -

RFQ

MMBD7000LT1HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs 1 Pair Series Connection Standard 100 V 200mA (DC) 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 100 V 150°C (Max) Surface Mount
BAS4005E6433HTMA1

BAS4005E6433HTMA1

DIODE ARRAY SCHOTTKY 40V SOT23

Infineon Technologies
2,733 -

RFQ

BAS4005E6433HTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 1 Pair Common Cathode Schottky 40 V 120mA (DC) 1 V @ 40 mA Small Signal =< 200mA (Io), Any Speed 100 ps 1 µA @ 30 V 150°C (Max) Surface Mount
IDW60C65D1XKSA1

IDW60C65D1XKSA1

DIODE 650V 60A RAPID 1 TO247-3

Infineon Technologies
3,178 -

RFQ

IDW60C65D1XKSA1

Ficha técnica

Bulk,Tube Rapid 1 Active 1 Pair Common Cathode Standard 650 V 30A 1.7 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 66 ns 40 µA @ 650 V -40°C ~ 175°C Through Hole
IDW15G120C5BFKSA1

IDW15G120C5BFKSA1

DIODE SCHOTKY 1200V 24A TO247-3

Infineon Technologies
2,898 -

RFQ

IDW15G120C5BFKSA1

Ficha técnica

Tube CoolSiC™+ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 24A (DC) 1.6 V @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 62 µA @ 1200 V -55°C ~ 175°C Through Hole
IDW40G120C5BFKSA1

IDW40G120C5BFKSA1

DIODE GEN PURP 1200V 55A TO247-3

Infineon Technologies
3,593 -

RFQ

IDW40G120C5BFKSA1

Ficha técnica

Tube CoolSiC™+ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 55A (DC) 1.65 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 166 µA @ 1200 V -55°C ~ 175°C Through Hole
DD100N16SHPSA1

DD100N16SHPSA1

DIODE MODULE 1600V 100A

Infineon Technologies
3,828 -

RFQ

DD100N16SHPSA1

Ficha técnica

Tray - Active 1 Pair Series Connection Standard 1600 V 130A - - - - - Chassis Mount
DD180N16SHPSA1

DD180N16SHPSA1

DIODE MODULE GP 1600V 192A

Infineon Technologies
2,233 -

RFQ

DD180N16SHPSA1

Ficha técnica

Bulk,Tray - Active 1 Pair Series Connection Standard 1600 V 192A 1.39 V @ 500 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 1600 V -40°C ~ 125°C Chassis Mount
DD340N22SHPSA1

DD340N22SHPSA1

MOD DIODE PWRBLOCK PB50SB-1

Infineon Technologies
3,024 -

RFQ

DD340N22SHPSA1

Ficha técnica

Tray - Active 1 Pair Series Connection Standard 2200 V 330A - Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 2200 V -40°C ~ 135°C Chassis Mount
DDB6U85N16LHOSA1

DDB6U85N16LHOSA1

DIODE MOD GP 1600V 60A AGISOPACK

Infineon Technologies
2,750 -

RFQ

DDB6U85N16LHOSA1

Ficha técnica

Tray - Active 3 Independent Standard 1600 V 60A 1.44 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 5 mA @ 1600 V 150°C (Max) Chassis Mount
DD104N16KHPSA1

DD104N16KHPSA1

DIODE MODULE GP 1600V 104A

Infineon Technologies
3,483 -

RFQ

DD104N16KHPSA1

Ficha técnica

Bulk,Tray - Active 1 Pair Common Cathode Standard 1600 V 104A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V -40°C ~ 150°C Chassis Mount
DD171N16KHPSA1

DD171N16KHPSA1

DIODE MODULE GP 1600V 171A

Infineon Technologies
2,231 -

RFQ

DD171N16KHPSA1

Ficha técnica

Tray DD171N Active 1 Pair Common Cathode Standard 1600 V 171A 1.26 V @ 500 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V -40°C ~ 150°C Chassis Mount
DDB6U205N16LHOSA1

DDB6U205N16LHOSA1

DIODE MODULE GP 1600V

Infineon Technologies
3,946 -

RFQ

DDB6U205N16LHOSA1

Ficha técnica

Tray - Active 3 Independent Standard 1600 V - 1.47 V @ 200 A - - 10 mA @ 1600 V -40°C ~ 150°C Chassis Mount
DD175N34KHPSA1

DD175N34KHPSA1

DIODE MODULE GP 3400V 223A

Infineon Technologies
3,039 -

RFQ

DD175N34KHPSA1

Ficha técnica

Tray - Active 1 Pair Series Connection Standard 3400 V 223A 2.05 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 3400 V -40°C ~ 150°C Chassis Mount
DD700N22KHPSA3

DD700N22KHPSA3

DIODE MODULE GP 2200V 700A

Infineon Technologies
3,355 -

RFQ

DD700N22KHPSA3

Ficha técnica

Tray - Active 1 Pair Series Connection Standard 2200 V 700A 1.36 V @ 2200 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2200 V -40°C ~ 150°C Chassis Mount
IDW30C65D1XKSA1

IDW30C65D1XKSA1

DIODE 650V 30A RAPID1 TO247-3

Infineon Technologies
2,057 -

RFQ

IDW30C65D1XKSA1

Ficha técnica

Tube Rapid 1 Active 1 Pair Common Cathode Standard 650 V 15A 1.7 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 71 ns 40 µA @ 650 V -40°C ~ 175°C Through Hole
IDW80C65D2XKSA1

IDW80C65D2XKSA1

DIODE 650V 80A CC RAPID2 TO247-3

Infineon Technologies
2,796 -

RFQ

IDW80C65D2XKSA1

Ficha técnica

Tube Rapid 2 Active 1 Pair Common Cathode Standard 650 V 40A 2.2 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 36 ns 40 µA @ 650 V -40°C ~ 175°C Through Hole
IDW80C65D1XKSA1

IDW80C65D1XKSA1

DIODE 650V 80A CC RAPID1 TO247-3

Infineon Technologies
3,368 -

RFQ

IDW80C65D1XKSA1

Ficha técnica

Bulk,Tube Rapid 1 Active 1 Pair Common Cathode Standard 650 V 40A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 77 ns 40 µA @ 650 V -40°C ~ 175°C Through Hole
IDW10G120C5BFKSA1

IDW10G120C5BFKSA1

DIODE SCHOTTKY 1.2KV 10A TO247-3

Infineon Technologies
2,458 -

RFQ

IDW10G120C5BFKSA1

Ficha técnica

Bulk,Tube CoolSiC™+ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 17A 1.65 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 40 µA @ 1200 V -55°C ~ 175°C Through Hole
IDW20G120C5BFKSA1

IDW20G120C5BFKSA1

DIODE 1.2KV 20A RAPID2 TO247-3

Infineon Technologies
3,217 -

RFQ

IDW20G120C5BFKSA1

Ficha técnica

Tube CoolSiC™+ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 31A 1.65 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 83 µA @ 1200 V -55°C ~ 175°C Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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