Diodos - Rectificadores - Matrices

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR20040CT

MBR20040CT

DIODE MODULE 40V 200A 2TOWER

GeneSiC Semiconductor
3,011 -

RFQ

MBR20040CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 40 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20040CTR

MBR20040CTR

DIODE MODULE 40V 200A 2TOWER

GeneSiC Semiconductor
2,789 -

RFQ

MBR20040CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 40 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20045CT

MBR20045CT

DIODE MODULE 45V 200A 2TOWER

GeneSiC Semiconductor
2,915 -

RFQ

MBR20045CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 45 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20045CTR

MBR20045CTR

DIODE MODULE 45V 200A 2TOWER

GeneSiC Semiconductor
2,208 -

RFQ

MBR20045CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 45 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20060CT

MBR20060CT

DIODE MODULE 60V 200A 2TOWER

GeneSiC Semiconductor
2,294 -

RFQ

MBR20060CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20060CTR

MBR20060CTR

DIODE MODULE 60V 200A 2TOWER

GeneSiC Semiconductor
2,847 -

RFQ

MBR20060CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 60 V 200A (DC) 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20080CT

MBR20080CT

DIODE MODULE 80V 200A 2TOWER

GeneSiC Semiconductor
3,351 -

RFQ

MBR20080CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR20080CTR

MBR20080CTR

DIODE MODULE 80V 200A 2TOWER

GeneSiC Semiconductor
2,214 -

RFQ

MBR20080CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 80 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MBR200150CT

MBR200150CT

DIODE SCHOTTKY 150V 100A 2 TOWER

GeneSiC Semiconductor
3,017 -

RFQ

MBR200150CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR200150CTR

MBR200150CTR

DIODE SCHOTTKY 150V 100A 2 TOWER

GeneSiC Semiconductor
2,444 -

RFQ

MBR200150CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C Chassis Mount
MBR200200CT

MBR200200CT

DIODE SCHOTTKY 200V 100A 2 TOWER

GeneSiC Semiconductor
3,168 -

RFQ

MBR200200CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBR200200CTR

MBR200200CTR

DIODE SCHOTTKY 200V 100A 2 TOWER

GeneSiC Semiconductor
2,507 -

RFQ

MBR200200CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C Chassis Mount
MSRTA200100AD

MSRTA200100AD

DIODE GEN 1KV 200A 3 TOWER

GeneSiC Semiconductor
3,493 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1000 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C Chassis Mount
MSRTA200120AD

MSRTA200120AD

DIODE GEN 1.2KV 200A 3 TOWER

GeneSiC Semiconductor
3,727 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1200 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C Chassis Mount
MSRTA200140AD

MSRTA200140AD

DIODE GEN 1.4KV 200A 3 TOWER

GeneSiC Semiconductor
2,156 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRTA20060AD

MSRTA20060AD

DIODE GEN PURP 600V 200A 3 TOWER

GeneSiC Semiconductor
3,600 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRTA20080AD

MSRTA20080AD

DIODE GEN PURP 800V 200A 3 TOWER

GeneSiC Semiconductor
3,532 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C Chassis Mount
MURT10040

MURT10040

DIODE ARRAY GP 400V 50A 3TOWER

GeneSiC Semiconductor
3,704 -

RFQ

MURT10040

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT10040R

MURT10040R

DIODE ARRAY GP REV POLAR3TOWER

GeneSiC Semiconductor
3,942 -

RFQ

MURT10040R

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard, Reverse Polarity 400 V 50A 1.35 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MURT10060

MURT10060

DIODE ARRAY GP 600V 50A 3TOWER

GeneSiC Semiconductor
2,596 -

RFQ

MURT10060

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 50A 1.7 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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