Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
RBU1005M

RBU1005M

BRIDGE RECT GLASS 600V 10A RBU

Rectron USA
750 -

RFQ

RBU1005M

Ficha técnica

Tube - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 1 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, RBU
KBP201

KBP201

STD 2A, CASE TYPE: KBP

EIC SEMICONDUCTOR INC.
900 -

RFQ

KBP201

Ficha técnica

Bag - Active Single Phase Standard 100 V 2 A 1 V @ 1 A 10 µA @ 100 V -50°C ~ 125°C (TJ) Through Hole 4-SIP, KBP
GBJ6J

GBJ6J

6A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6J

Ficha técnica

Bag - Active Single Phase Standard 600 V 2.8 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ6G

GBJ6G

6A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6G

Ficha técnica

Bag - Active Single Phase Standard 400 V 2.8 A 1 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ6M

GBJ6M

6A -1000V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ6M

Ficha técnica

Bag - Active Single Phase Standard 1 kV 2.8 A 1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15G

GBJ15G

15A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ15G

Ficha técnica

Bag - Active Single Phase Standard 400 V 3.5 A 1 V @ 7.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15J

GBJ15J

15A -600V - GBJ - BRIDGE

SURGE
249 -

RFQ

GBJ15J

Ficha técnica

Bag - Active Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15M

GBJ15M

15A -1000V - GBJ - BRIDGE

SURGE
245 -

RFQ

GBJ15M

Ficha técnica

Bag - Active Single Phase Standard 1 kV 3.5 A 1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ8M

GBJ8M

8A -1000V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ8M

Ficha técnica

Bag GBJ8 Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ8G

GBJ8G

8A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ8G

Ficha técnica

Bag GBJ8 Active Single Phase Standard 100 V 8 A 1 V @ 4 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole -
GBJ8J

GBJ8J

8A -600V - GBJ - BRIDGE

SURGE
248 -

RFQ

GBJ8J

Ficha técnica

Bag GBJ8 Active Single Phase Standard 600 V 8 A 1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
B80S2A-SLIM

B80S2A-SLIM

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,253 -

RFQ

B80S2A-SLIM

Ficha técnica

Strip - Active Single Phase Standard 160 V 2.3 A 950 mV @ 2 A 5 µA @ 160 V -50°C ~ 150°C (TJ) Surface Mount
B40S2A-SLIM

B40S2A-SLIM

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,374 -

RFQ

B40S2A-SLIM

Ficha técnica

Strip - Active Single Phase Standard 80 V 2.3 A 950 mV @ 2 A 5 µA @ 80 V -50°C ~ 150°C (TJ) Surface Mount
GBJ10G

GBJ10G

10A -400V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ10G

Ficha técnica

Bag - Active Single Phase Standard 400 V 10 A 1 V @ 5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ10J

GBJ10J

10A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ10J

Ficha técnica

Bag - Active Single Phase Standard 600 V 10 A 1 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ10M

GBJ10M

10A -1000V - GBJ - BRIDGE

SURGE
240 -

RFQ

GBJ10M

Ficha técnica

Bag - Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25J

GBJ25J

25A -600V - GBJ - BRIDGE

SURGE
250 -

RFQ

GBJ25J

Ficha técnica

Bag - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25G

GBJ25G

25A -400V - GBJ - BRIDGE

SURGE
249 -

RFQ

GBJ25G

Ficha técnica

Bag - Active Single Phase Standard 400 V 3.5 A 1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ25M

GBJ25M

25A -1000V - GBJ - BRIDGE

SURGE
215 -

RFQ

GBJ25M

Ficha técnica

Bag - Active Single Phase Standard 1 kV 3.5 A 1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
KBP210

KBP210

STD 2A, CASE TYPE: KBP

EIC SEMICONDUCTOR INC.
200 -

RFQ

KBP210

Ficha técnica

Bag - Active Single Phase Standard 1 kV 2 A 1 V @ 1 A 10 µA @ 1000 V -50°C ~ 125°C (TJ) Through Hole 4-SIP, KBP
Total 8096 Record«Prev1... 7778798081828384...405Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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