Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
TBS606

TBS606

6A 600V STANDARD BRIDGE RECTIFIE

Taiwan Semiconductor Corporation
2,412 -

RFQ

TBS606

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 2 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
TS6P05G

TS6P05G

BRIDGE RECT 1PHASE 600V 6A TS-6P

Taiwan Semiconductor Corporation
2,312 -

RFQ

TS6P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS10P05G

TS10P05G

BRIDGE RECT 1P 600V 10A TS-6P

Taiwan Semiconductor Corporation
3,659 -

RFQ

TS10P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 10 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS10K80-A

TS10K80-A

BRIDGE RECT 1PHASE 800V 10A TS4K

Taiwan Semiconductor Corporation
3,660 -

RFQ

TS10K80-A

Ficha técnica

Tube - Discontinued at Mosen Single Phase Standard 800 V 10 A 1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS4K
TS20P05G C2G

TS20P05G C2G

BRIDGE RECT 1P 600V 20A TS-6P

Taiwan Semiconductor Corporation
3,321 -

RFQ

TS20P05G C2G

Ficha técnica

Tube - Active Single Phase Standard 600 V 20 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
DBL157G

DBL157G

BRIDGE RECT 1PHASE 1KV 1.5A DBL

Taiwan Semiconductor Corporation
247 -

RFQ

DBL157G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 2 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300, 7.62mm)
GBL205

GBL205

BRIDGE RECT 1PHASE 600V 2A GBL

Taiwan Semiconductor Corporation
101 -

RFQ

GBL205

Ficha técnica

Tube - Active Single Phase Standard 600 V 2 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
D2SB60

D2SB60

BRIDGE RECT 1PHASE 600V 2A GBL

Taiwan Semiconductor Corporation
239 -

RFQ

D2SB60

Ficha técnica

Tube - Active Single Phase Standard 600 V 2 A 1.1 V @ 15 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS4K80

TS4K80

BRIDGE RECT 1PHASE 800V 4A TS4K

Taiwan Semiconductor Corporation
577 -

RFQ

TS4K80

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU405

GBU405

BRIDGE RECT 1PHASE 600V 4A GBU

Taiwan Semiconductor Corporation
583 -

RFQ

GBU405

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU406

GBU406

BRIDGE RECT 1PHASE 800V 4A GBU

Taiwan Semiconductor Corporation
369 -

RFQ

GBU406

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBL10

GBL10

BRIDGE RECT 1PHASE 1KV 4A GBL

Taiwan Semiconductor Corporation
115 -

RFQ

GBL10

Ficha técnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS6K60

TS6K60

BRIDGE RECT 1PHASE 600V 6A TS4K

Taiwan Semiconductor Corporation
3,818 -

RFQ

TS6K60

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS10K60

TS10K60

BRIDGE RECT 1PHASE 600V 10A TS4K

Taiwan Semiconductor Corporation
500 -

RFQ

TS10K60

Ficha técnica

Tube - Active Single Phase Standard 600 V 10 A 1 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
TS15P07G

TS15P07G

BRIDGE RECT 1PHASE 1KV 15A TS-6P

Taiwan Semiconductor Corporation
321 -

RFQ

TS15P07G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 15 A 1.1 V @ 15 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
KBL405G

KBL405G

BRIDGE RECT 1PHASE 600V 4A KBL

Taiwan Semiconductor Corporation
923 -

RFQ

KBL405G

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBU1507

GBU1507

15A, 1000V, STANDARD BRIDGE RECT

Taiwan Semiconductor Corporation
656 -

RFQ

GBU1507

Ficha técnica

Tube - Active Single Phase Standard 1 kV 15 A 1.1 V @ 15 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
TS35P05G

TS35P05G

BRIDGE RECT 1P 600V 35A TS-6P

Taiwan Semiconductor Corporation
896 -

RFQ

TS35P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P07G

TS40P07G

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation
510 -

RFQ

TS40P07G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P07G

TS35P07G

BRIDGE RECT 1PHASE 1KV 35A TS-6P

Taiwan Semiconductor Corporation
442 -

RFQ

TS35P07G

Ficha técnica

Tube - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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