Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBL005 D2G

GBL005 D2G

BRIDGE RECT 1PHASE 50V 4A GBL

Taiwan Semiconductor Corporation
2,504 -

RFQ

GBL005 D2G

Ficha técnica

Tube - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 5 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL005HD2G

GBL005HD2G

BRIDGE RECT 1PHASE 50V 4A GBL

Taiwan Semiconductor Corporation
3,735 -

RFQ

GBL005HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 5 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01 D2G

GBL01 D2G

BRIDGE RECT 1PHASE 100V 4A GBL

Taiwan Semiconductor Corporation
3,166 -

RFQ

GBL01 D2G

Ficha técnica

Tube - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01HD2G

GBL01HD2G

BRIDGE RECT 1PHASE 100V 4A GBL

Taiwan Semiconductor Corporation
2,626 -

RFQ

GBL01HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02 D2G

GBL02 D2G

BRIDGE RECT 1PHASE 200V 4A GBL

Taiwan Semiconductor Corporation
3,631 -

RFQ

GBL02 D2G

Ficha técnica

Tube - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02HD2G

GBL02HD2G

BRIDGE RECT 1PHASE 200V 4A GBL

Taiwan Semiconductor Corporation
2,277 -

RFQ

GBL02HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL04HD2G

GBL04HD2G

BRIDGE RECT 1PHASE 400V 4A GBL

Taiwan Semiconductor Corporation
2,490 -

RFQ

GBL04HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06HD2G

GBL06HD2G

BRIDGE RECT 1PHASE 600V 4A GBL

Taiwan Semiconductor Corporation
3,622 -

RFQ

GBL06HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08HD2G

GBL08HD2G

BRIDGE RECT 1PHASE 800V 4A GBL

Taiwan Semiconductor Corporation
2,638 -

RFQ

GBL08HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10H

GBL10H

BRIDGE RECT 1PHASE 1KV 4A GBL

Taiwan Semiconductor Corporation
2,324 -

RFQ

GBL10H

Ficha técnica

Tube Automotive, AEC-Q101 Discontinued at Mosen Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL201 D2G

GBL201 D2G

BRIDGE RECT 1PHASE 50V 2A GBL

Taiwan Semiconductor Corporation
3,708 -

RFQ

GBL201 D2G

Ficha técnica

Tube - Active Single Phase Standard 50 V 2 A 1 V @ 2 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL201HD2G

GBL201HD2G

BRIDGE RECT 1PHASE 50V 2A GBL

Taiwan Semiconductor Corporation
3,568 -

RFQ

GBL201HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 50 V 2 A 1 V @ 2 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL202 D2G

GBL202 D2G

BRIDGE RECT 1PHASE 100V 2A GBL

Taiwan Semiconductor Corporation
2,715 -

RFQ

GBL202 D2G

Ficha técnica

Tube - Active Single Phase Standard 100 V 2 A 1 V @ 2 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL202HD2G

GBL202HD2G

BRIDGE RECT 1PHASE 100V 2A GBL

Taiwan Semiconductor Corporation
2,873 -

RFQ

GBL202HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 100 V 2 A 1 V @ 2 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL203 D2G

GBL203 D2G

BRIDGE RECT 1PHASE 200V 2A GBL

Taiwan Semiconductor Corporation
2,217 -

RFQ

GBL203 D2G

Ficha técnica

Tube - Active Single Phase Standard 200 V 2 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL203HD2G

GBL203HD2G

BRIDGE RECT 1PHASE 200V 2A GBL

Taiwan Semiconductor Corporation
2,465 -

RFQ

GBL203HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 200 V 2 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA005HD2G

GBLA005HD2G

BRIDGE RECT 1PHASE 50V 4A GBL

Taiwan Semiconductor Corporation
3,677 -

RFQ

GBLA005HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Discontinued at Mosen Single Phase Standard 50 V 4 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA01 D2G

GBLA01 D2G

BRIDGE RECT 1PHASE 100V 4A GBL

Taiwan Semiconductor Corporation
2,991 -

RFQ

GBLA01 D2G

Ficha técnica

Tube - Discontinued at Mosen Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA01HD2G

GBLA01HD2G

BRIDGE RECT 1PHASE 100V 4A GBL

Taiwan Semiconductor Corporation
3,923 -

RFQ

GBLA01HD2G

Ficha técnica

Tube Automotive, AEC-Q101 Discontinued at Mosen Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA02 D2G

GBLA02 D2G

BRIDGE RECT 1PHASE 200V 4A GBL

Taiwan Semiconductor Corporation
2,640 -

RFQ

GBLA02 D2G

Ficha técnica

Tube - Discontinued at Mosen Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
Total 1002 Record«Prev1... 1819202122232425...51Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario