Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
TS8P05GH

TS8P05GH

BRIDGE RECT 1PHASE 600V 8A TS-6P

Taiwan Semiconductor Corporation
2,143 -

RFQ

TS8P05GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS8P06GH

TS8P06GH

BRIDGE RECT 1PHASE 800V 8A TS-6P

Taiwan Semiconductor Corporation
2,886 -

RFQ

TS8P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
KBL407G

KBL407G

BRIDGE RECT 1PHASE 1KV 4A KBL

Taiwan Semiconductor Corporation
2,194 -

RFQ

KBL407G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
TS25P04G D2G

TS25P04G D2G

BRIDGE RECT 1P 400V 25A TS-6P

Taiwan Semiconductor Corporation
3,580 -

RFQ

TS25P04G D2G

Ficha técnica

Tube - Active Single Phase Standard 400 V 25 A 1.1 V @ 25 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU2504

GBU2504

BRIDGE RECT 1PHASE 400V 25A GBU

Taiwan Semiconductor Corporation
2,167 -

RFQ

GBU2504

Ficha técnica

Tube - Active Single Phase Standard 400 V 25 A 1.2 V @ 25 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBL604G

KBL604G

BRIDGE RECT 1PHASE 400V 6A KBL

Taiwan Semiconductor Corporation
2,605 -

RFQ

KBL604G

Ficha técnica

Tray - Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL605G

KBL605G

BRIDGE RECT 1PHASE 600V 6A KBL

Taiwan Semiconductor Corporation
3,371 -

RFQ

KBL605G

Ficha técnica

Tray - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL606G

KBL606G

BRIDGE RECT 1PHASE 800V 6A KBL

Taiwan Semiconductor Corporation
3,022 -

RFQ

KBL606G

Ficha técnica

Tray - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL607G

KBL607G

BRIDGE RECT 1PHASE 1KV 6A KBL

Taiwan Semiconductor Corporation
3,146 -

RFQ

KBL607G

Ficha técnica

Tray - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
TS35P06G

TS35P06G

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation
2,847 -

RFQ

TS35P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P05G

TS40P05G

BRIDGE RECT 1P 600V 40A TS-6P

Taiwan Semiconductor Corporation
3,988 -

RFQ

TS40P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 40 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P06G

TS40P06G

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation
3,396 -

RFQ

TS40P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS25P04GH

TS25P04GH

BRIDGE RECT 1P 400V 25A TS-6P

Taiwan Semiconductor Corporation
2,594 -

RFQ

TS25P04GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 25 A 1.1 V @ 25 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P05GH

TS35P05GH

BRIDGE RECT 1P 600V 35A TS-6P

Taiwan Semiconductor Corporation
2,320 -

RFQ

TS35P05GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P06GH

TS35P06GH

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation
3,049 -

RFQ

TS35P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P07GH

TS35P07GH

BRIDGE RECT 1PHASE 1KV 35A TS-6P

Taiwan Semiconductor Corporation
2,282 -

RFQ

TS35P07GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P06GH

TS40P06GH

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation
2,263 -

RFQ

TS40P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P07GH

TS40P07GH

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation
2,468 -

RFQ

TS40P07GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS6P06G

TS6P06G

DIODE BRIDGE 6A 800V TS-6P

Taiwan Semiconductor Corporation
2,440 -

RFQ

Tube - Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS6P07G

TS6P07G

DIODE BRIDGE 6A 1000V TS-6P

Taiwan Semiconductor Corporation
3,396 -

RFQ

Tube - Active Single Phase Standard 1 kV 6 A 1.1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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