Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DB25-14

DB25-14

3PH BRIDGE DB 1400V 25A

Diotec Semiconductor
2,314 -

RFQ

DB25-14

Ficha técnica

Box - Active Three Phase Standard 1.4 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1400 V -50°C ~ 150°C (TJ) Chassis Mount 5-Square, DB-35
DB35-12

DB35-12

3PH BRIDGE DB 1200V 35A

Diotec Semiconductor
400 -

RFQ

DB35-12

Ficha técnica

Box - Active Three Phase Standard 1.2 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1200 V -50°C ~ 150°C (TJ) Chassis Mount 5-Square, DB-35
DB35-14

DB35-14

3PH BRIDGE DB 1400V 35A

Diotec Semiconductor
200 -

RFQ

DB35-14

Ficha técnica

Box - Active Three Phase Standard 1.4 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1400 V -50°C ~ 150°C (TJ) Chassis Mount 5-Square, DB-35
NTE5311

NTE5311

R-SI BRIDGE 1000V 4A

NTE Electronics, Inc
332 -

RFQ

NTE5311

Ficha técnica

Bag - Active Single Phase Standard 1 kV 4 A 1.1 V @ 2 A 10 µA @ 1000 V -65°C ~ 125°C (TJ) Through Hole 4-ESIP
NTE5315

NTE5315

R-SI BRIDGE 600V 8A

NTE Electronics, Inc
2,865 -

RFQ

NTE5315

Ficha técnica

Bag - Active Single Phase Standard 600 V 8 A 1.1 V @ 4 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole 4-Square
NTE5330

NTE5330

R-SI BRIDGE 600V 6A

NTE Electronics, Inc
3,382 -

RFQ

NTE5330

Ficha técnica

Bag - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-ESIP
NTE53016

NTE53016

R-BRIDGE 200V 50A

NTE Electronics, Inc
2,316 -

RFQ

NTE53016

Ficha técnica

Bag - Active Single Phase Standard 200 V 50 A 1.1 V @ 25 A 50 µA @ 200 V -65°C ~ 150°C (TJ) QC Terminal 4-Square
NTE53018

NTE53018

R-BRIDGE 600V 50A

NTE Electronics, Inc
336 -

RFQ

NTE53018

Ficha técnica

Bag - Active Single Phase Standard 600 V 50 A 1.1 V @ 25 A 50 µA @ 600 V -65°C ~ 150°C (TJ) QC Terminal 4-Square
NTE53020

NTE53020

R-BRIDGE 1000V 50A

NTE Electronics, Inc
3,432 -

RFQ

NTE53020

Ficha técnica

Bag - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 50 µA @ 1000 V -65°C ~ 150°C (TJ) QC Terminal 4-Square
NTE5316

NTE5316

R-SI BRIDGE 800V 8A

NTE Electronics, Inc
465 -

RFQ

NTE5316

Ficha técnica

Bag - Active Single Phase Standard 800 V 8 A 1.1 V @ 4 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole 4-Square
NTE5317

NTE5317

R-SI BRIDGE 1000V 8A

NTE Electronics, Inc
2,213 -

RFQ

NTE5317

Ficha técnica

Bag - Active Single Phase Standard 1 kV 8 A 1.1 V @ 4 A 10 µA @ 1000 V -55°C ~ 125°C (TJ) Through Hole 4-Square
DBI25-08A

DBI25-08A

3PH BRIDGE 35X25X4 800V 25A

Diotec Semiconductor
2,769 -

RFQ

DBI25-08A

Ficha técnica

Tube - Active Three Phase Standard 800 V 40 A 1.05 V @ 12.5 A 5 µA @ 800 V -50°C ~ 175°C (TJ) Through Hole 5-SIP
NTE5324

NTE5324

R-SI BRIDGE 400V 25A

NTE Electronics, Inc
3,205 -

RFQ

NTE5324

Ficha técnica

Bag - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 125°C (TJ) QC Terminal 4-Square
NTE5326

NTE5326

R-SI BRIDGE 600V 25A

NTE Electronics, Inc
3,720 -

RFQ

NTE5326

Ficha técnica

Bag - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 125°C (TJ) QC Terminal 4-Square
DBI20-16B

DBI20-16B

3PH BRIDGE 35X25X4 1600V 20A

Diotec Semiconductor
990 -

RFQ

DBI20-16B

Ficha técnica

Tube - Active Three Phase Standard 1.6 kV 3 A 1.3 V @ 20 A 10 µA @ 1600 V -50°C ~ 150°C (TJ) Through Hole 5-SIP
DBI20-12B

DBI20-12B

3PH BRIDGE 35X25X4 1200V 20A

Diotec Semiconductor
300 -

RFQ

DBI20-12B

Ficha técnica

Tube - Active Three Phase Standard 1.2 kV 20 A 1.3 V @ 20 A 10 µA @ 1200 V -50°C ~ 150°C (TJ) Through Hole 5-SIP
DBI20-08B

DBI20-08B

3PH BRIDGE 35X25X4 800V 20A

Diotec Semiconductor
300 -

RFQ

DBI20-08B

Ficha técnica

Tube - Active Three Phase Standard 800 V 3 A 1.3 V @ 20 A 10 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 5-SIP
DBI25-12A

DBI25-12A

3PH BRIDGE 35X25X4 1200V 25A

Diotec Semiconductor
2,984 -

RFQ

DBI25-12A

Ficha técnica

Tube - Active Three Phase Standard 1.2 kV 40 A 1.05 V @ 12.5 A 5 µA @ 1200 V -50°C ~ 175°C (TJ) Through Hole 5-SIP
DBI25-16A

DBI25-16A

3PH BRIDGE 35X25X4 1600V 25A

Diotec Semiconductor
300 -

RFQ

DBI25-16A

Ficha técnica

Tube - Active Three Phase Standard 1.6 kV 40 A 1.05 V @ 12.5 A 5 µA @ 1600 V -50°C ~ 175°C (TJ) Through Hole 5-SIP
NTE5331

NTE5331

R-SI BRIDGE 1000V 6A

NTE Electronics, Inc
3,761 -

RFQ

NTE5331

Ficha técnica

Bag - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-ESIP
Total 8096 Record«Prev1... 3839404142434445...405Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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